Abstract
The simple models for the formation of a new phase in a surface layer during ion implantation are discussed. The model of the new phase formation in the same conditions and considering the finiteness of relaxation time is suggested. The model parameters were evaluated using literature data. The stresses and strains in diffusion zone were calculated. The authors demonstrated that the concentration distribution and values of stresses depend on the relation between time scales of various physical processes.
| Original language | English |
|---|---|
| Title of host publication | AIP Conference Proceedings |
| Publisher | American Institute of Physics Inc. |
| Pages | 245-249 |
| Number of pages | 5 |
| Volume | 1623 |
| ISBN (Print) | 9780735412606 |
| DOIs | |
| Publication status | Published - 2014 |
| Event | International Conference on Physical Mesomechanics of Multilevel Systems 2014 - Tomsk, Russian Federation Duration: 3 Sep 2014 → 5 Sep 2014 |
Other
| Other | International Conference on Physical Mesomechanics of Multilevel Systems 2014 |
|---|---|
| Country | Russian Federation |
| City | Tomsk |
| Period | 3.9.14 → 5.9.14 |
Keywords
- Ion implantation
- Phases formation
- Relaxation time
- Surface layer modification
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Cite this
Khan, A., & Knyazeva, A. G. (2014). New phase synthesis in surface layer in the conditions of ion implantation. In AIP Conference Proceedings (Vol. 1623, pp. 245-249). American Institute of Physics Inc.. https://doi.org/10.1063/1.4898928