New phase synthesis in surface layer in the conditions of ion implantation

R&D Laboratory for Modeling of Technological Processes

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The simple models for the formation of a new phase in a surface layer during ion implantation are discussed. The model of the new phase formation in the same conditions and considering the finiteness of relaxation time is suggested. The model parameters were evaluated using literature data. The stresses and strains in diffusion zone were calculated. The authors demonstrated that the concentration distribution and values of stresses depend on the relation between time scales of various physical processes.

Original language	English
Title of host publication	AIP Conference Proceedings
Publisher	American Institute of Physics Inc.
Pages	245-249
Number of pages	5
Volume	1623
ISBN (Print)	9780735412606
DOIs	https://doi.org/10.1063/1.4898928
Publication status	Published - 2014
Event	International Conference on Physical Mesomechanics of Multilevel Systems 2014 - Tomsk, Russian Federation Duration: 3 Sep 2014 → 5 Sep 2014

Other

Other	International Conference on Physical Mesomechanics of Multilevel Systems 2014
Country	Russian Federation
City	Tomsk
Period	3.9.14 → 5.9.14

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Keywords

Ion implantation
Phases formation
Relaxation time
Surface layer modification

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Khan, A., & Knyazeva, A. G. (2014). New phase synthesis in surface layer in the conditions of ion implantation. In AIP Conference Proceedings (Vol. 1623, pp. 245-249). American Institute of Physics Inc.. https://doi.org/10.1063/1.4898928

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Access to Document

10.1063/1.4898928