New metal ion and plasma surface modification methods

Abstract

The review is devoted to the analysis of the present state-of-the-art and development trends of the new methods and equipment being developed in the Nuclear Physics Institute, Tomsk (NPI), for dc vacuum arc-based ion and plasma materials processing. The features and advantages are demonstrated for the method of high-concentration implantation with compensation of surface ion sputtering by metal plasma deposition, the method of metal plasma deposition under repetitively - pulsed ion mixing with ion beams and plasma flow formed in the "Raduga-5" source, and the method of coating deposition and ion implantation, including an application of the filtered dc metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10% - 99%. The features of ion implantation and metal plasma deposition for dielectric, semi-conducting and metal samples are presented.

Original language	English
Pages (from-to)	8637-8640
Number of pages	4
Journal	Surface and Coatings Technology
Volume	201
Issue number	19-20 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.surfcoat.2005.12.052
Publication status	Published - 5 Aug 2007

Keywords

Coating deposition
Ion implantation
Metal plasma

ASJC Scopus subject areas

Surfaces, Coatings and Films
Condensed Matter Physics
Surfaces and Interfaces

Access to Document

10.1016/j.surfcoat.2005.12.052

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Cite this

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abstract = "The review is devoted to the analysis of the present state-of-the-art and development trends of the new methods and equipment being developed in the Nuclear Physics Institute, Tomsk (NPI), for dc vacuum arc-based ion and plasma materials processing. The features and advantages are demonstrated for the method of high-concentration implantation with compensation of surface ion sputtering by metal plasma deposition, the method of metal plasma deposition under repetitively - pulsed ion mixing with ion beams and plasma flow formed in the {"}Raduga-5{"} source, and the method of coating deposition and ion implantation, including an application of the filtered dc metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10% - 99%. The features of ion implantation and metal plasma deposition for dielectric, semi-conducting and metal samples are presented.",

keywords = "Coating deposition, Ion implantation, Metal plasma",

author = "Ryabchikov, {Alexander I.} and Stepanov, {Igor B.}",

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AU - Ryabchikov, Alexander I.

AU - Stepanov, Igor B.

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N2 - The review is devoted to the analysis of the present state-of-the-art and development trends of the new methods and equipment being developed in the Nuclear Physics Institute, Tomsk (NPI), for dc vacuum arc-based ion and plasma materials processing. The features and advantages are demonstrated for the method of high-concentration implantation with compensation of surface ion sputtering by metal plasma deposition, the method of metal plasma deposition under repetitively - pulsed ion mixing with ion beams and plasma flow formed in the "Raduga-5" source, and the method of coating deposition and ion implantation, including an application of the filtered dc metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10% - 99%. The features of ion implantation and metal plasma deposition for dielectric, semi-conducting and metal samples are presented.

AB - The review is devoted to the analysis of the present state-of-the-art and development trends of the new methods and equipment being developed in the Nuclear Physics Institute, Tomsk (NPI), for dc vacuum arc-based ion and plasma materials processing. The features and advantages are demonstrated for the method of high-concentration implantation with compensation of surface ion sputtering by metal plasma deposition, the method of metal plasma deposition under repetitively - pulsed ion mixing with ion beams and plasma flow formed in the "Raduga-5" source, and the method of coating deposition and ion implantation, including an application of the filtered dc metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10% - 99%. The features of ion implantation and metal plasma deposition for dielectric, semi-conducting and metal samples are presented.

KW - Coating deposition

KW - Ion implantation

KW - Metal plasma

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