Abstract
The review is devoted to the analysis of the present state-of-the-art and development trends of the new methods and equipment being developed in the Nuclear Physics Institute, Tomsk (NPI), for dc vacuum arc-based ion and plasma materials processing. The features and advantages are demonstrated for the method of high-concentration implantation with compensation of surface ion sputtering by metal plasma deposition, the method of metal plasma deposition under repetitively - pulsed ion mixing with ion beams and plasma flow formed in the "Raduga-5" source, and the method of coating deposition and ion implantation, including an application of the filtered dc metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10% - 99%. The features of ion implantation and metal plasma deposition for dielectric, semi-conducting and metal samples are presented.
| Original language | English |
|---|---|
| Pages (from-to) | 8637-8640 |
| Number of pages | 4 |
| Journal | Surface and Coatings Technology |
| Volume | 201 |
| Issue number | 19-20 SPEC. ISS. |
| DOIs | |
| Publication status | Published - 5 Aug 2007 |
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Keywords
- Coating deposition
- Ion implantation
- Metal plasma
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
Cite this
New metal ion and plasma surface modification methods. / Ryabchikov, Alexander I.; Stepanov, Igor B.
In: Surface and Coatings Technology, Vol. 201, No. 19-20 SPEC. ISS., 05.08.2007, p. 8637-8640.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - New metal ion and plasma surface modification methods
AU - Ryabchikov, Alexander I.
AU - Stepanov, Igor B.
PY - 2007/8/5
Y1 - 2007/8/5
N2 - The review is devoted to the analysis of the present state-of-the-art and development trends of the new methods and equipment being developed in the Nuclear Physics Institute, Tomsk (NPI), for dc vacuum arc-based ion and plasma materials processing. The features and advantages are demonstrated for the method of high-concentration implantation with compensation of surface ion sputtering by metal plasma deposition, the method of metal plasma deposition under repetitively - pulsed ion mixing with ion beams and plasma flow formed in the "Raduga-5" source, and the method of coating deposition and ion implantation, including an application of the filtered dc metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10% - 99%. The features of ion implantation and metal plasma deposition for dielectric, semi-conducting and metal samples are presented.
AB - The review is devoted to the analysis of the present state-of-the-art and development trends of the new methods and equipment being developed in the Nuclear Physics Institute, Tomsk (NPI), for dc vacuum arc-based ion and plasma materials processing. The features and advantages are demonstrated for the method of high-concentration implantation with compensation of surface ion sputtering by metal plasma deposition, the method of metal plasma deposition under repetitively - pulsed ion mixing with ion beams and plasma flow formed in the "Raduga-5" source, and the method of coating deposition and ion implantation, including an application of the filtered dc metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10% - 99%. The features of ion implantation and metal plasma deposition for dielectric, semi-conducting and metal samples are presented.
KW - Coating deposition
KW - Ion implantation
KW - Metal plasma
UR - http://www.scopus.com/inward/record.url?scp=34447526509&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34447526509&partnerID=8YFLogxK
U2 - 10.1016/j.surfcoat.2005.12.052
DO - 10.1016/j.surfcoat.2005.12.052
M3 - Article
AN - SCOPUS:34447526509
VL - 201
SP - 8637
EP - 8640
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
SN - 0257-8972
IS - 19-20 SPEC. ISS.
ER -