Abstract
For the first time, it is demonstrated in this letter that high-power silicon devices [diodes and insulated gate bipolar transistor (IGBTs)] can be forward biased and remains functional after cross sections. Sample preparation is presented, and electrical characterizations of a high-power diode and IGBT (600 V-200 A) have been performed in steady on-state. Infrared thermography on the cross-section surface using a macro-lens with high spatial resolution has allowed characterizing the vertical thermal distribution inside the power diode during forward bias. The impact of this work is that it opens a wide field of investigation in high-power semiconductor device characterization under forward bias.
| Original language | English |
|---|---|
| Article number | 6151010 |
| Pages (from-to) | 576-578 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 33 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1 Apr 2012 |
| Externally published | Yes |
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Keywords
- Cross section
- electrical characterization
- failure analysis
- IGBT
- power devices
- power diode
- thermal characterization
- thermal mapping
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
New investigation possibilities on forward biased power devices using cross sections. / Kociniewski, T.; Moussodji, J.; Khatir, Z.; Berkani, M.; Lefebvre, S.; Azzopardi, S.
In: IEEE Electron Device Letters, Vol. 33, No. 4, 6151010, 01.04.2012, p. 576-578.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - New investigation possibilities on forward biased power devices using cross sections
AU - Kociniewski, T.
AU - Moussodji, J.
AU - Khatir, Z.
AU - Berkani, M.
AU - Lefebvre, S.
AU - Azzopardi, S.
PY - 2012/4/1
Y1 - 2012/4/1
N2 - For the first time, it is demonstrated in this letter that high-power silicon devices [diodes and insulated gate bipolar transistor (IGBTs)] can be forward biased and remains functional after cross sections. Sample preparation is presented, and electrical characterizations of a high-power diode and IGBT (600 V-200 A) have been performed in steady on-state. Infrared thermography on the cross-section surface using a macro-lens with high spatial resolution has allowed characterizing the vertical thermal distribution inside the power diode during forward bias. The impact of this work is that it opens a wide field of investigation in high-power semiconductor device characterization under forward bias.
AB - For the first time, it is demonstrated in this letter that high-power silicon devices [diodes and insulated gate bipolar transistor (IGBTs)] can be forward biased and remains functional after cross sections. Sample preparation is presented, and electrical characterizations of a high-power diode and IGBT (600 V-200 A) have been performed in steady on-state. Infrared thermography on the cross-section surface using a macro-lens with high spatial resolution has allowed characterizing the vertical thermal distribution inside the power diode during forward bias. The impact of this work is that it opens a wide field of investigation in high-power semiconductor device characterization under forward bias.
KW - Cross section
KW - electrical characterization
KW - failure analysis
KW - IGBT
KW - power devices
KW - power diode
KW - thermal characterization
KW - thermal mapping
UR - http://www.scopus.com/inward/record.url?scp=84859217095&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84859217095&partnerID=8YFLogxK
U2 - 10.1109/LED.2011.2182492
DO - 10.1109/LED.2011.2182492
M3 - Article
AN - SCOPUS:84859217095
VL - 33
SP - 576
EP - 578
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 4
M1 - 6151010
ER -