New investigation possibilities on forward biased power devices using cross sections

T. Kociniewski, J. Moussodji, Z. Khatir, M. Berkani, S. Lefebvre, S. Azzopardi

Research output: Contribution to journal › Article

Abstract

For the first time, it is demonstrated in this letter that high-power silicon devices [diodes and insulated gate bipolar transistor (IGBTs)] can be forward biased and remains functional after cross sections. Sample preparation is presented, and electrical characterizations of a high-power diode and IGBT (600 V-200 A) have been performed in steady on-state. Infrared thermography on the cross-section surface using a macro-lens with high spatial resolution has allowed characterizing the vertical thermal distribution inside the power diode during forward bias. The impact of this work is that it opens a wide field of investigation in high-power semiconductor device characterization under forward bias.

Original language	English
Article number	6151010
Pages (from-to)	576-578
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	4
DOIs	https://doi.org/10.1109/LED.2011.2182492
Publication status	Published - 1 Apr 2012
Externally published	Yes

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Keywords

Cross section
electrical characterization
failure analysis
IGBT
power devices
power diode
thermal characterization
thermal mapping

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Kociniewski, T., Moussodji, J., Khatir, Z., Berkani, M., Lefebvre, S., & Azzopardi, S. (2012). New investigation possibilities on forward biased power devices using cross sections. IEEE Electron Device Letters, 33(4), 576-578. [6151010]. https://doi.org/10.1109/LED.2011.2182492

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Access to Document

10.1109/LED.2011.2182492