Abstract
For the first time, it is demonstrated in this letter that high-power silicon devices [diodes and insulated gate bipolar transistor (IGBTs)] can be forward biased and remains functional after cross sections. Sample preparation is presented, and electrical characterizations of a high-power diode and IGBT (600 V-200 A) have been performed in steady on-state. Infrared thermography on the cross-section surface using a macro-lens with high spatial resolution has allowed characterizing the vertical thermal distribution inside the power diode during forward bias. The impact of this work is that it opens a wide field of investigation in high-power semiconductor device characterization under forward bias.
Original language | English |
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Article number | 6151010 |
Pages (from-to) | 576-578 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 33 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1 Apr 2012 |
Externally published | Yes |
Keywords
- Cross section
- electrical characterization
- failure analysis
- IGBT
- power devices
- power diode
- thermal characterization
- thermal mapping
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering