New investigation possibilities on forward biased power devices using cross sections

T. Kociniewski, J. Moussodji, Z. Khatir, M. Berkani, S. Lefebvre, S. Azzopardi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

For the first time, it is demonstrated in this letter that high-power silicon devices [diodes and insulated gate bipolar transistor (IGBTs)] can be forward biased and remains functional after cross sections. Sample preparation is presented, and electrical characterizations of a high-power diode and IGBT (600 V-200 A) have been performed in steady on-state. Infrared thermography on the cross-section surface using a macro-lens with high spatial resolution has allowed characterizing the vertical thermal distribution inside the power diode during forward bias. The impact of this work is that it opens a wide field of investigation in high-power semiconductor device characterization under forward bias.

Original languageEnglish
Article number6151010
Pages (from-to)576-578
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number4
DOIs
Publication statusPublished - 1 Apr 2012
Externally publishedYes

Fingerprint

Insulated gate bipolar transistors (IGBT)
Silicon
Macros
Lenses
Diodes
Hot Temperature
Power semiconductor devices

Keywords

  • Cross section
  • electrical characterization
  • failure analysis
  • IGBT
  • power devices
  • power diode
  • thermal characterization
  • thermal mapping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kociniewski, T., Moussodji, J., Khatir, Z., Berkani, M., Lefebvre, S., & Azzopardi, S. (2012). New investigation possibilities on forward biased power devices using cross sections. IEEE Electron Device Letters, 33(4), 576-578. [6151010]. https://doi.org/10.1109/LED.2011.2182492

New investigation possibilities on forward biased power devices using cross sections. / Kociniewski, T.; Moussodji, J.; Khatir, Z.; Berkani, M.; Lefebvre, S.; Azzopardi, S.

In: IEEE Electron Device Letters, Vol. 33, No. 4, 6151010, 01.04.2012, p. 576-578.

Research output: Contribution to journalArticle

Kociniewski, T, Moussodji, J, Khatir, Z, Berkani, M, Lefebvre, S & Azzopardi, S 2012, 'New investigation possibilities on forward biased power devices using cross sections', IEEE Electron Device Letters, vol. 33, no. 4, 6151010, pp. 576-578. https://doi.org/10.1109/LED.2011.2182492
Kociniewski, T. ; Moussodji, J. ; Khatir, Z. ; Berkani, M. ; Lefebvre, S. ; Azzopardi, S. / New investigation possibilities on forward biased power devices using cross sections. In: IEEE Electron Device Letters. 2012 ; Vol. 33, No. 4. pp. 576-578.
@article{c41ccf2bd9ea4141b5f045bc06949f8d,
title = "New investigation possibilities on forward biased power devices using cross sections",
abstract = "For the first time, it is demonstrated in this letter that high-power silicon devices [diodes and insulated gate bipolar transistor (IGBTs)] can be forward biased and remains functional after cross sections. Sample preparation is presented, and electrical characterizations of a high-power diode and IGBT (600 V-200 A) have been performed in steady on-state. Infrared thermography on the cross-section surface using a macro-lens with high spatial resolution has allowed characterizing the vertical thermal distribution inside the power diode during forward bias. The impact of this work is that it opens a wide field of investigation in high-power semiconductor device characterization under forward bias.",
keywords = "Cross section, electrical characterization, failure analysis, IGBT, power devices, power diode, thermal characterization, thermal mapping",
author = "T. Kociniewski and J. Moussodji and Z. Khatir and M. Berkani and S. Lefebvre and S. Azzopardi",
year = "2012",
month = "4",
day = "1",
doi = "10.1109/LED.2011.2182492",
language = "English",
volume = "33",
pages = "576--578",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

TY - JOUR

T1 - New investigation possibilities on forward biased power devices using cross sections

AU - Kociniewski, T.

AU - Moussodji, J.

AU - Khatir, Z.

AU - Berkani, M.

AU - Lefebvre, S.

AU - Azzopardi, S.

PY - 2012/4/1

Y1 - 2012/4/1

N2 - For the first time, it is demonstrated in this letter that high-power silicon devices [diodes and insulated gate bipolar transistor (IGBTs)] can be forward biased and remains functional after cross sections. Sample preparation is presented, and electrical characterizations of a high-power diode and IGBT (600 V-200 A) have been performed in steady on-state. Infrared thermography on the cross-section surface using a macro-lens with high spatial resolution has allowed characterizing the vertical thermal distribution inside the power diode during forward bias. The impact of this work is that it opens a wide field of investigation in high-power semiconductor device characterization under forward bias.

AB - For the first time, it is demonstrated in this letter that high-power silicon devices [diodes and insulated gate bipolar transistor (IGBTs)] can be forward biased and remains functional after cross sections. Sample preparation is presented, and electrical characterizations of a high-power diode and IGBT (600 V-200 A) have been performed in steady on-state. Infrared thermography on the cross-section surface using a macro-lens with high spatial resolution has allowed characterizing the vertical thermal distribution inside the power diode during forward bias. The impact of this work is that it opens a wide field of investigation in high-power semiconductor device characterization under forward bias.

KW - Cross section

KW - electrical characterization

KW - failure analysis

KW - IGBT

KW - power devices

KW - power diode

KW - thermal characterization

KW - thermal mapping

UR - http://www.scopus.com/inward/record.url?scp=84859217095&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84859217095&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2182492

DO - 10.1109/LED.2011.2182492

M3 - Article

AN - SCOPUS:84859217095

VL - 33

SP - 576

EP - 578

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 4

M1 - 6151010

ER -