Abstract
During the recent years, a significant amount of research has been performed on single-walled carbon nanotubes (SWCNTs) as a channel material in thin-film transistors (Pham et al. IEEE Trans Nanotechnol 11:44-50, 2012). This has prompted the application of advanced characterization techniques based on combined atomic force microscopy (AFM) and Raman spectroscopy studies (Mureau et al. Electrophoresis 29:2266-2271, 2008). In this context, we use confocal Raman microscopy and current sensing atomic force microscopy (CS-AFM) to study phonons and the electronic transport in semiconducting SWCNTs, which were aligned between palladium electrodes using dielectrophoresis (Kuzyk Electrophoresis 32:2307-2313, 2011). Raman imaging was performed in the region around the electrodes on the suspended CNTs using several laser excitation wavelengths. Analysis of the G+/G- splitting in the Raman spectra (Sgobba and Guldi Chem Soc Rev 38:165-184, 2009) shows CNT diameters of 2.5 ± 0.3 nm. Neither surface modification nor increase in defect density or stress at the CNT-electrode contact could be detected, but rather a shift in G+ and G- peak positions in regions with high CNT density between the electrodes. Simultaneous topographical and electrical characterization of the CNT transistor by CS-AFM confirms the presence of CNT bundles having a stable electrical contact with the transistor electrodes. For a similar load force, reproducible current-voltage (I/V) curves for the same CNT regions verify the stability of the electrical contact between the nanotube and the electrodes as well as the nanotube and the AFM tip over different experimental sessions using different AFM tips. Strong variations observed in the I/V response at different regions of the CNT transistor are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 1-6 |
| Number of pages | 6 |
| Journal | Nanoscale Research Letters |
| Volume | 7 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Dec 2012 |
| Externally published | Yes |
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Keywords
- Atomic force microscopy
- CNT transistor
- Current sensing AFM
- Raman imaging
- Single-walled carbon nanotubes
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
Cite this
Nanoscale optical and electrical characterization of horizontally aligned single-walled carbon nanotubes. / Rodriguez, Raul D.; Toader, Marius; Hermann, Sascha; Sheremet, Evgeniya; Müller, Susanne; Gordan, Ovidiu D.; Yu, Haibo; Schulz, Stefan E.; Hietschold, Michael; Zahn, Dietrich R.T.
In: Nanoscale Research Letters, Vol. 7, No. 1, 01.12.2012, p. 1-6.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nanoscale optical and electrical characterization of horizontally aligned single-walled carbon nanotubes
AU - Rodriguez, Raul D.
AU - Toader, Marius
AU - Hermann, Sascha
AU - Sheremet, Evgeniya
AU - Müller, Susanne
AU - Gordan, Ovidiu D.
AU - Yu, Haibo
AU - Schulz, Stefan E.
AU - Hietschold, Michael
AU - Zahn, Dietrich R.T.
PY - 2012/12/1
Y1 - 2012/12/1
N2 - During the recent years, a significant amount of research has been performed on single-walled carbon nanotubes (SWCNTs) as a channel material in thin-film transistors (Pham et al. IEEE Trans Nanotechnol 11:44-50, 2012). This has prompted the application of advanced characterization techniques based on combined atomic force microscopy (AFM) and Raman spectroscopy studies (Mureau et al. Electrophoresis 29:2266-2271, 2008). In this context, we use confocal Raman microscopy and current sensing atomic force microscopy (CS-AFM) to study phonons and the electronic transport in semiconducting SWCNTs, which were aligned between palladium electrodes using dielectrophoresis (Kuzyk Electrophoresis 32:2307-2313, 2011). Raman imaging was performed in the region around the electrodes on the suspended CNTs using several laser excitation wavelengths. Analysis of the G+/G- splitting in the Raman spectra (Sgobba and Guldi Chem Soc Rev 38:165-184, 2009) shows CNT diameters of 2.5 ± 0.3 nm. Neither surface modification nor increase in defect density or stress at the CNT-electrode contact could be detected, but rather a shift in G+ and G- peak positions in regions with high CNT density between the electrodes. Simultaneous topographical and electrical characterization of the CNT transistor by CS-AFM confirms the presence of CNT bundles having a stable electrical contact with the transistor electrodes. For a similar load force, reproducible current-voltage (I/V) curves for the same CNT regions verify the stability of the electrical contact between the nanotube and the electrodes as well as the nanotube and the AFM tip over different experimental sessions using different AFM tips. Strong variations observed in the I/V response at different regions of the CNT transistor are discussed.
AB - During the recent years, a significant amount of research has been performed on single-walled carbon nanotubes (SWCNTs) as a channel material in thin-film transistors (Pham et al. IEEE Trans Nanotechnol 11:44-50, 2012). This has prompted the application of advanced characterization techniques based on combined atomic force microscopy (AFM) and Raman spectroscopy studies (Mureau et al. Electrophoresis 29:2266-2271, 2008). In this context, we use confocal Raman microscopy and current sensing atomic force microscopy (CS-AFM) to study phonons and the electronic transport in semiconducting SWCNTs, which were aligned between palladium electrodes using dielectrophoresis (Kuzyk Electrophoresis 32:2307-2313, 2011). Raman imaging was performed in the region around the electrodes on the suspended CNTs using several laser excitation wavelengths. Analysis of the G+/G- splitting in the Raman spectra (Sgobba and Guldi Chem Soc Rev 38:165-184, 2009) shows CNT diameters of 2.5 ± 0.3 nm. Neither surface modification nor increase in defect density or stress at the CNT-electrode contact could be detected, but rather a shift in G+ and G- peak positions in regions with high CNT density between the electrodes. Simultaneous topographical and electrical characterization of the CNT transistor by CS-AFM confirms the presence of CNT bundles having a stable electrical contact with the transistor electrodes. For a similar load force, reproducible current-voltage (I/V) curves for the same CNT regions verify the stability of the electrical contact between the nanotube and the electrodes as well as the nanotube and the AFM tip over different experimental sessions using different AFM tips. Strong variations observed in the I/V response at different regions of the CNT transistor are discussed.
KW - Atomic force microscopy
KW - CNT transistor
KW - Current sensing AFM
KW - Raman imaging
KW - Single-walled carbon nanotubes
UR - http://www.scopus.com/inward/record.url?scp=84875314320&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84875314320&partnerID=8YFLogxK
U2 - 10.1186/1556-276X-7-682
DO - 10.1186/1556-276X-7-682
M3 - Article
AN - SCOPUS:84875314320
VL - 7
SP - 1
EP - 6
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
SN - 1931-7573
IS - 1
ER -