Abstract
Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or the [010] direction. On atomically flat surfaces, they exhibit a highly uniform, triangular cross section. A simple thermodynamic model accounts for the existence of a preferential base width for longitudinal expansion, in quantitative agreement with the experimental findings. Despite the absence of intentional doping, the first transistor-type devices made from single wires show low-resistive electrical contacts and single-hole transport at sub-Kelvin temperatures. In view of their exceptionally small and self-defined cross section, these Ge wires hold promise for the realization of hole systems with exotic properties and provide a new development route for silicon-based nanoelectronics.
| Original language | English |
|---|---|
| Article number | 085502 |
| Journal | Physical Review Letters |
| Volume | 109 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 23 Aug 2012 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Monolithic growth of ultrathin Ge nanowires on Si(001). / Zhang, J. J.; Katsaros, G.; Montalenti, F.; Scopece, D.; Rezaev, R. O.; Mickel, C.; Rellinghaus, B.; Miglio, L.; De Franceschi, S.; Rastelli, A.; Schmidt, O. G.
In: Physical Review Letters, Vol. 109, No. 8, 085502, 23.08.2012.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Monolithic growth of ultrathin Ge nanowires on Si(001)
AU - Zhang, J. J.
AU - Katsaros, G.
AU - Montalenti, F.
AU - Scopece, D.
AU - Rezaev, R. O.
AU - Mickel, C.
AU - Rellinghaus, B.
AU - Miglio, L.
AU - De Franceschi, S.
AU - Rastelli, A.
AU - Schmidt, O. G.
PY - 2012/8/23
Y1 - 2012/8/23
N2 - Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or the [010] direction. On atomically flat surfaces, they exhibit a highly uniform, triangular cross section. A simple thermodynamic model accounts for the existence of a preferential base width for longitudinal expansion, in quantitative agreement with the experimental findings. Despite the absence of intentional doping, the first transistor-type devices made from single wires show low-resistive electrical contacts and single-hole transport at sub-Kelvin temperatures. In view of their exceptionally small and self-defined cross section, these Ge wires hold promise for the realization of hole systems with exotic properties and provide a new development route for silicon-based nanoelectronics.
AB - Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or the [010] direction. On atomically flat surfaces, they exhibit a highly uniform, triangular cross section. A simple thermodynamic model accounts for the existence of a preferential base width for longitudinal expansion, in quantitative agreement with the experimental findings. Despite the absence of intentional doping, the first transistor-type devices made from single wires show low-resistive electrical contacts and single-hole transport at sub-Kelvin temperatures. In view of their exceptionally small and self-defined cross section, these Ge wires hold promise for the realization of hole systems with exotic properties and provide a new development route for silicon-based nanoelectronics.
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U2 - 10.1103/PhysRevLett.109.085502
DO - 10.1103/PhysRevLett.109.085502
M3 - Article
VL - 109
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 8
M1 - 085502
ER -