Monolithic growth of ultrathin Ge nanowires on Si(001)

J. J. Zhang, G. Katsaros, F. Montalenti, D. Scopece, R. O. Rezaev, C. Mickel, B. Rellinghaus, L. Miglio, S. De Franceschi, A. Rastelli, O. G. Schmidt

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or the [010] direction. On atomically flat surfaces, they exhibit a highly uniform, triangular cross section. A simple thermodynamic model accounts for the existence of a preferential base width for longitudinal expansion, in quantitative agreement with the experimental findings. Despite the absence of intentional doping, the first transistor-type devices made from single wires show low-resistive electrical contacts and single-hole transport at sub-Kelvin temperatures. In view of their exceptionally small and self-defined cross section, these Ge wires hold promise for the realization of hole systems with exotic properties and provide a new development route for silicon-based nanoelectronics.

Original languageEnglish
Article number085502
JournalPhysical Review Letters
Volume109
Issue number8
DOIs
Publication statusPublished - 23 Aug 2012

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nanowires
wire
cross sections
micrometers
flat surfaces
electric contacts
transistors
molecular beam epitaxy
routes
catalysts
thermodynamics
expansion
silicon
cells
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Zhang, J. J., Katsaros, G., Montalenti, F., Scopece, D., Rezaev, R. O., Mickel, C., ... Schmidt, O. G. (2012). Monolithic growth of ultrathin Ge nanowires on Si(001). Physical Review Letters, 109(8), [085502]. https://doi.org/10.1103/PhysRevLett.109.085502

Monolithic growth of ultrathin Ge nanowires on Si(001). / Zhang, J. J.; Katsaros, G.; Montalenti, F.; Scopece, D.; Rezaev, R. O.; Mickel, C.; Rellinghaus, B.; Miglio, L.; De Franceschi, S.; Rastelli, A.; Schmidt, O. G.

In: Physical Review Letters, Vol. 109, No. 8, 085502, 23.08.2012.

Research output: Contribution to journalArticle

Zhang, JJ, Katsaros, G, Montalenti, F, Scopece, D, Rezaev, RO, Mickel, C, Rellinghaus, B, Miglio, L, De Franceschi, S, Rastelli, A & Schmidt, OG 2012, 'Monolithic growth of ultrathin Ge nanowires on Si(001)', Physical Review Letters, vol. 109, no. 8, 085502. https://doi.org/10.1103/PhysRevLett.109.085502
Zhang JJ, Katsaros G, Montalenti F, Scopece D, Rezaev RO, Mickel C et al. Monolithic growth of ultrathin Ge nanowires on Si(001). Physical Review Letters. 2012 Aug 23;109(8). 085502. https://doi.org/10.1103/PhysRevLett.109.085502
Zhang, J. J. ; Katsaros, G. ; Montalenti, F. ; Scopece, D. ; Rezaev, R. O. ; Mickel, C. ; Rellinghaus, B. ; Miglio, L. ; De Franceschi, S. ; Rastelli, A. ; Schmidt, O. G. / Monolithic growth of ultrathin Ge nanowires on Si(001). In: Physical Review Letters. 2012 ; Vol. 109, No. 8.
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