The role of molecular-type bound states in the axial and planar channeling of electrons in a lattice is considered for the first time. A quantum-mechanical approximation is used to analyze the bound motion of fast electrons relative to LT AN BR 110 greater than crystallographic axes and (211) planes of a silicon single crystal. The contribution of molecular-type states to the formation of the angular distributions of particles outside the crystal and the orientational dependences of the Rutherford electron scattering is discussed.
|Title of host publication||Sov Phys Solid State|
|Number of pages||5|
|Publication status||Published - Jan 1978|
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