Abstract
Molecular beam epitaxy has been applied to grow planar and only Si-doped epitaxial n- and p-type layers on GaAs substrates with (111)A orientation. The morphology of the n-layers is significantly better than that of the p-layers. However, in both cases, the photoluminescence spectra and carrier mobility show no significant difference from the same characteristics of (100) crystal samples. Planar p-n junctions have also been grown. Depending on the structure of the layers, the I-V characteristics have a form which is typical of conventional or inverted diodes.
| Original language | English |
|---|---|
| Pages (from-to) | 120-123 |
| Number of pages | 4 |
| Journal | Semiconductor Science and Technology |
| Volume | 17 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Feb 2002 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
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Cite this
Galiev, G., Kaminskii, V., Milovzorov, D., Velihovskii, L., & Mokerov, V. (2002). Molecular beam epitaxy growth of a planar p-n junction on a (111) A GaAs substrate using the amphoteric property of silicon dopant. Semiconductor Science and Technology, 17(2), 120-123. https://doi.org/10.1088/0268-1242/17/2/305