Abstract
Molecular beam epitaxy has been applied to grow planar and only Si-doped epitaxial n- and p-type layers on GaAs substrates with (111)A orientation. The morphology of the n-layers is significantly better than that of the p-layers. However, in both cases, the photoluminescence spectra and carrier mobility show no significant difference from the same characteristics of (100) crystal samples. Planar p-n junctions have also been grown. Depending on the structure of the layers, the I-V characteristics have a form which is typical of conventional or inverted diodes.
| Original language | English |
|---|---|
| Pages (from-to) | 120-123 |
| Number of pages | 4 |
| Journal | Semiconductor Science and Technology |
| Volume | 17 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Feb 2002 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
Cite this
Molecular beam epitaxy growth of a planar p-n junction on a (111) A GaAs substrate using the amphoteric property of silicon dopant. / Galiev, G.; Kaminskii, V.; Milovzorov, D.; Velihovskii, L.; Mokerov, V.
In: Semiconductor Science and Technology, Vol. 17, No. 2, 02.2002, p. 120-123.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Molecular beam epitaxy growth of a planar p-n junction on a (111) A GaAs substrate using the amphoteric property of silicon dopant
AU - Galiev, G.
AU - Kaminskii, V.
AU - Milovzorov, D.
AU - Velihovskii, L.
AU - Mokerov, V.
PY - 2002/2
Y1 - 2002/2
N2 - Molecular beam epitaxy has been applied to grow planar and only Si-doped epitaxial n- and p-type layers on GaAs substrates with (111)A orientation. The morphology of the n-layers is significantly better than that of the p-layers. However, in both cases, the photoluminescence spectra and carrier mobility show no significant difference from the same characteristics of (100) crystal samples. Planar p-n junctions have also been grown. Depending on the structure of the layers, the I-V characteristics have a form which is typical of conventional or inverted diodes.
AB - Molecular beam epitaxy has been applied to grow planar and only Si-doped epitaxial n- and p-type layers on GaAs substrates with (111)A orientation. The morphology of the n-layers is significantly better than that of the p-layers. However, in both cases, the photoluminescence spectra and carrier mobility show no significant difference from the same characteristics of (100) crystal samples. Planar p-n junctions have also been grown. Depending on the structure of the layers, the I-V characteristics have a form which is typical of conventional or inverted diodes.
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UR - http://www.scopus.com/inward/citedby.url?scp=0036471148&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/17/2/305
DO - 10.1088/0268-1242/17/2/305
M3 - Article
VL - 17
SP - 120
EP - 123
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 2
ER -