Molecular beam epitaxy growth of a planar p-n junction on a (111) A GaAs substrate using the amphoteric property of silicon dopant

G. Galiev, V. Kaminskii, D. Milovzorov, L. Velihovskii, V. Mokerov

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Molecular beam epitaxy has been applied to grow planar and only Si-doped epitaxial n- and p-type layers on GaAs substrates with (111)A orientation. The morphology of the n-layers is significantly better than that of the p-layers. However, in both cases, the photoluminescence spectra and carrier mobility show no significant difference from the same characteristics of (100) crystal samples. Planar p-n junctions have also been grown. Depending on the structure of the layers, the I-V characteristics have a form which is typical of conventional or inverted diodes.

Original languageEnglish
Pages (from-to)120-123
Number of pages4
JournalSemiconductor Science and Technology
Volume17
Issue number2
DOIs
Publication statusPublished - Feb 2002

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

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