Abstract
Molecular beam epitaxy has been applied to grow planar and only Si-doped epitaxial n- and p-type layers on GaAs substrates with (111)A orientation. The morphology of the n-layers is significantly better than that of the p-layers. However, in both cases, the photoluminescence spectra and carrier mobility show no significant difference from the same characteristics of (100) crystal samples. Planar p-n junctions have also been grown. Depending on the structure of the layers, the I-V characteristics have a form which is typical of conventional or inverted diodes.
Original language | English |
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Pages (from-to) | 120-123 |
Number of pages | 4 |
Journal | Semiconductor Science and Technology |
Volume | 17 |
Issue number | 2 |
DOIs | |
Publication status | Published - Feb 2002 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics