Molecular beam epitaxy growth of a planar p-n junction on a (111) A GaAs substrate using the amphoteric property of silicon dopant

G. Galiev, V. Kaminskii, D. Milovzorov, L. Velihovskii, V. Mokerov

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Molecular beam epitaxy has been applied to grow planar and only Si-doped epitaxial n- and p-type layers on GaAs substrates with (111)A orientation. The morphology of the n-layers is significantly better than that of the p-layers. However, in both cases, the photoluminescence spectra and carrier mobility show no significant difference from the same characteristics of (100) crystal samples. Planar p-n junctions have also been grown. Depending on the structure of the layers, the I-V characteristics have a form which is typical of conventional or inverted diodes.

Original languageEnglish
Pages (from-to)120-123
Number of pages4
JournalSemiconductor Science and Technology
Volume17
Issue number2
DOIs
Publication statusPublished - Feb 2002

Fingerprint

Carrier mobility
Silicon
p-n junctions
Molecular beam epitaxy
Photoluminescence
Diodes
molecular beam epitaxy
Doping (additives)
Crystals
silicon
Substrates
carrier mobility
diodes
photoluminescence
gallium arsenide
crystals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Molecular beam epitaxy growth of a planar p-n junction on a (111) A GaAs substrate using the amphoteric property of silicon dopant. / Galiev, G.; Kaminskii, V.; Milovzorov, D.; Velihovskii, L.; Mokerov, V.

In: Semiconductor Science and Technology, Vol. 17, No. 2, 02.2002, p. 120-123.

Research output: Contribution to journalArticle

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