Modification of polycrystalline Bn, AlN, and Si3N4 surfaces by ion beams

V. V. Lopatin, A. V. Kabyshev, L. S. Bushnev

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    Abstract

    Modification of surface structure and properties of the highly dispersive polycrystalline compounds α-BN, AlN, and Si3N4 have been investigated. The ceramics prepared by a vapour-phase deposition (BN), sintering (AlN and ABN: 40% AlN + 60% BN), and hot pressing (Si3N4) present thermally stable dielectrics having low electric conduction which is negligibly changed if the temperature is increased to about 1000 K. Implantation was carried out in plasma arc accelerators. The light Li, C, and Al ions formed thermally stable coats with a small temperature coefficient of resistivity up to 1600 K. The hopping conductivity was also found to appear at the implantation-induced additional levels in wide-band (about 5 eV) nitrides. Transition to a practically non-activated conductivity during post-implantation thermal treatment was observed.

    Original languageEnglish
    JournalPhysica Status Solidi (A) Applied Research
    Volume116
    Issue number1
    Publication statusPublished - Nov 1989

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    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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