Modification of surface structure and properties of the highly dispersive polycrystalline compounds α-BN, AlN, and Si3N4 have been investigated. The ceramics prepared by a vapour-phase deposition (BN), sintering (AlN and ABN: 40% AlN + 60% BN), and hot pressing (Si3N4) present thermally stable dielectrics having low electric conduction which is negligibly changed if the temperature is increased to about 1000 K. Implantation was carried out in plasma arc accelerators. The light Li, C, and Al ions formed thermally stable coats with a small temperature coefficient of resistivity up to 1600 K. The hopping conductivity was also found to appear at the implantation-induced additional levels in wide-band (about 5 eV) nitrides. Transition to a practically non-activated conductivity during post-implantation thermal treatment was observed.
|Journal||Physica Status Solidi (A) Applied Research|
|Publication status||Published - Nov 1989|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics