Modification of copper single crystals by ion and electron beams

Yu F. Ivanov, A. D. Pogrebnyak, V. I. Lavrent'yev

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Abstract

Investigation results of element and structure-phase analysis of near surface layers of Cu single crystals with (100)- and (111)-surface crystallographic orientation after high-dose titanium-ion implantation and subsequent high-current electron-beam irradiation are presented. A shift of the concentration maximum into the substrate depth was observed under increased implantation dose, that contradicted some experimental and theoretical results. This effect relates to the influence of a surface film of impurities (C,O) on the process of sputtering. Electron-microscopy investigations demonstrated a complex structure of an implanted copper layer including an amorphous carbon film, a titanium-carbide sublayer, deeper titanium-carbide sublayer with a second-phase δ-CuTi segregations, which was followed by a large-grain crystallite Cu layer. High-current electron-beam irradiation did not result in the formation of new phases; however, a depth of the near-surface defect-containing layer is increased due to the formation of a dislocation substructure.

Original languageEnglish
Pages (from-to)43-51
Number of pages9
JournalMetallofizika i Noveishie Tekhnologii
Volume18
Issue number9
Publication statusPublished - 1996

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ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Condensed Matter Physics

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