Modeling of the impurity distribution obtained by ion implantation

V. G. Abdrashitov, V. V. Ryzhov

Research output: Contribution to journalArticle

Abstract

Models and a suite of programs (TRION, PIRSON, CHAPS, and DYCOD) that make it possible to calculate the impurity distribution for any implantation dose in a target with arbitrary composition are described. Test calculations for each program showed that the results are in good agreement with experimental data and with theoretical calculations performed by other authors. The suite of programs is intended for the development of the physical principals of ion-beam technologies.

Original languageEnglish
Pages (from-to)410-422
Number of pages13
JournalRussian Physics Journal
Volume37
Issue number5
DOIs
Publication statusPublished - May 1994

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ion implantation
impurities
implantation
ion beams
dosage

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Modeling of the impurity distribution obtained by ion implantation. / Abdrashitov, V. G.; Ryzhov, V. V.

In: Russian Physics Journal, Vol. 37, No. 5, 05.1994, p. 410-422.

Research output: Contribution to journalArticle

@article{2b426d1262524848a147824426bea1f1,
title = "Modeling of the impurity distribution obtained by ion implantation",
abstract = "Models and a suite of programs (TRION, PIRSON, CHAPS, and DYCOD) that make it possible to calculate the impurity distribution for any implantation dose in a target with arbitrary composition are described. Test calculations for each program showed that the results are in good agreement with experimental data and with theoretical calculations performed by other authors. The suite of programs is intended for the development of the physical principals of ion-beam technologies.",
author = "Abdrashitov, {V. G.} and Ryzhov, {V. V.}",
year = "1994",
month = "5",
doi = "10.1007/BF00560112",
language = "English",
volume = "37",
pages = "410--422",
journal = "Russian Physics Journal",
issn = "1064-8887",
publisher = "Consultants Bureau",
number = "5",

}

TY - JOUR

T1 - Modeling of the impurity distribution obtained by ion implantation

AU - Abdrashitov, V. G.

AU - Ryzhov, V. V.

PY - 1994/5

Y1 - 1994/5

N2 - Models and a suite of programs (TRION, PIRSON, CHAPS, and DYCOD) that make it possible to calculate the impurity distribution for any implantation dose in a target with arbitrary composition are described. Test calculations for each program showed that the results are in good agreement with experimental data and with theoretical calculations performed by other authors. The suite of programs is intended for the development of the physical principals of ion-beam technologies.

AB - Models and a suite of programs (TRION, PIRSON, CHAPS, and DYCOD) that make it possible to calculate the impurity distribution for any implantation dose in a target with arbitrary composition are described. Test calculations for each program showed that the results are in good agreement with experimental data and with theoretical calculations performed by other authors. The suite of programs is intended for the development of the physical principals of ion-beam technologies.

UR - http://www.scopus.com/inward/record.url?scp=34249763188&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249763188&partnerID=8YFLogxK

U2 - 10.1007/BF00560112

DO - 10.1007/BF00560112

M3 - Article

AN - SCOPUS:34249763188

VL - 37

SP - 410

EP - 422

JO - Russian Physics Journal

JF - Russian Physics Journal

SN - 1064-8887

IS - 5

ER -