Modeling of dynamics of big size ZnGeP2 Crystal growth by vertical bridgman technique

M. Philippov, Y. Babushkin, S. Efimov, S. Zamyatin, V. Rudnicki, A. Trofimov, A. Gribenyukov

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The results of a modelling of big size single crystal ZnGeP2 growth dynamics in the multi-zone thermal installation based on the vertical variant of the Bridgman technique are given. Trustworthiness of the results modeling is achieved by means of creation of the mathematical model taking into account the particularities of the installation as well as the changes in installation work volume during crystallization. Temperature field changes during crystal growth by numerical technique were examined. It is demonstrated that growth container moving has a significant impact on temperature field in work volume and crystallization isotherm local position. Thus, the actual crystal growth rate differs from the nominal velocity of growth container moving. The data received as a result of modelling should be taken into account in new equipment designing, crystallization process control system development and crystal growth experiments planning.

Original languageEnglish
Pages (from-to)283-290
Number of pages8
JournalBulletin of the Polish Academy of Sciences: Technical Sciences
Volume66
Issue number3
DOIs
Publication statusPublished - 1 Jun 2018

Keywords

  • Bridgman technique
  • Crystal growth
  • Finite elements method
  • Temperature field

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Information Systems
  • Engineering(all)
  • Computer Networks and Communications
  • Artificial Intelligence

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