Modeling of carbon penetration into silicon structure under the action of pulsed high-intensity ion beam

Nurken E. Aktaev, Gennady E. Remnev

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The action of high-intensity beam of carbon ions on a silicon sample is studied by means of a numerical modelling revealing formation of the in-depth carbon concentration profile in crystal lattice of silicon. We investigated three ways of the profile forming: short-pulsed ion implantation, recoil atoms mechanism and thermal diffusion of the carbon atoms adsorbed on the silicon surface. The latter is the result of high temperature gradient associated with the action of pulsed high-intensity ion beam. It is argued that the diffusion process plays the major role in forming of the concentration profile in the pre-surface layer of a silicon sample.

Original languageEnglish
Pages (from-to)54-57
Number of pages4
JournalSurface and Coatings Technology
Volume306
DOIs
Publication statusPublished - 25 Nov 2016

Fingerprint

Silicon
Ion beams
Carbon
penetration
ion beams
carbon
silicon
profiles
recoil atoms
Atoms
Thermal diffusion
thermal diffusion
crystal lattices
Crystal lattices
Ion implantation
Thermal gradients
adatoms
ion implantation
temperature gradients
surface layers

Keywords

  • Concentration profile
  • Diffusion
  • High-intensity ion beam
  • Implantation
  • Numerical modeling
  • Recoil atom
  • Stephan task

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Modeling of carbon penetration into silicon structure under the action of pulsed high-intensity ion beam. / Aktaev, Nurken E.; Remnev, Gennady E.

In: Surface and Coatings Technology, Vol. 306, 25.11.2016, p. 54-57.

Research output: Contribution to journalArticle

@article{b4b241439c534ac09a4344d7d2d600e9,
title = "Modeling of carbon penetration into silicon structure under the action of pulsed high-intensity ion beam",
abstract = "The action of high-intensity beam of carbon ions on a silicon sample is studied by means of a numerical modelling revealing formation of the in-depth carbon concentration profile in crystal lattice of silicon. We investigated three ways of the profile forming: short-pulsed ion implantation, recoil atoms mechanism and thermal diffusion of the carbon atoms adsorbed on the silicon surface. The latter is the result of high temperature gradient associated with the action of pulsed high-intensity ion beam. It is argued that the diffusion process plays the major role in forming of the concentration profile in the pre-surface layer of a silicon sample.",
keywords = "Concentration profile, Diffusion, High-intensity ion beam, Implantation, Numerical modeling, Recoil atom, Stephan task",
author = "Aktaev, {Nurken E.} and Remnev, {Gennady E.}",
year = "2016",
month = "11",
day = "25",
doi = "10.1016/j.surfcoat.2016.04.050",
language = "English",
volume = "306",
pages = "54--57",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",

}

TY - JOUR

T1 - Modeling of carbon penetration into silicon structure under the action of pulsed high-intensity ion beam

AU - Aktaev, Nurken E.

AU - Remnev, Gennady E.

PY - 2016/11/25

Y1 - 2016/11/25

N2 - The action of high-intensity beam of carbon ions on a silicon sample is studied by means of a numerical modelling revealing formation of the in-depth carbon concentration profile in crystal lattice of silicon. We investigated three ways of the profile forming: short-pulsed ion implantation, recoil atoms mechanism and thermal diffusion of the carbon atoms adsorbed on the silicon surface. The latter is the result of high temperature gradient associated with the action of pulsed high-intensity ion beam. It is argued that the diffusion process plays the major role in forming of the concentration profile in the pre-surface layer of a silicon sample.

AB - The action of high-intensity beam of carbon ions on a silicon sample is studied by means of a numerical modelling revealing formation of the in-depth carbon concentration profile in crystal lattice of silicon. We investigated three ways of the profile forming: short-pulsed ion implantation, recoil atoms mechanism and thermal diffusion of the carbon atoms adsorbed on the silicon surface. The latter is the result of high temperature gradient associated with the action of pulsed high-intensity ion beam. It is argued that the diffusion process plays the major role in forming of the concentration profile in the pre-surface layer of a silicon sample.

KW - Concentration profile

KW - Diffusion

KW - High-intensity ion beam

KW - Implantation

KW - Numerical modeling

KW - Recoil atom

KW - Stephan task

UR - http://www.scopus.com/inward/record.url?scp=84975106860&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84975106860&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2016.04.050

DO - 10.1016/j.surfcoat.2016.04.050

M3 - Article

VL - 306

SP - 54

EP - 57

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

ER -