Modeling of carbon penetration into silicon structure under the action of pulsed high-intensity ion beam

Nurken E. Aktaev, Gennady E. Remnev

Research output: Contribution to journalArticle

3 Citations (Scopus)


The action of high-intensity beam of carbon ions on a silicon sample is studied by means of a numerical modelling revealing formation of the in-depth carbon concentration profile in crystal lattice of silicon. We investigated three ways of the profile forming: short-pulsed ion implantation, recoil atoms mechanism and thermal diffusion of the carbon atoms adsorbed on the silicon surface. The latter is the result of high temperature gradient associated with the action of pulsed high-intensity ion beam. It is argued that the diffusion process plays the major role in forming of the concentration profile in the pre-surface layer of a silicon sample.

Original languageEnglish
Pages (from-to)54-57
Number of pages4
JournalSurface and Coatings Technology
Publication statusPublished - 25 Nov 2016



  • Concentration profile
  • Diffusion
  • High-intensity ion beam
  • Implantation
  • Numerical modeling
  • Recoil atom
  • Stephan task

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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