MOCVD growth and study of magnetic Co films

S. I. Dorovskikh, R. R. Hairullin, S. V. Sysoev, V. V. Kriventsov, A. V. Panin, Y. V. Shubin, N. B. Morozova, N. V. Gelfond, S. V. Korenev

Division for Experimental Physics

Research output: Contribution to journal › Article

Abstract

The Co(N'acN'ac)₂ complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.

Original language	English
Pages (from-to)	8-14
Number of pages	7
Journal	Surface Engineering
Volume	32
Issue number	1
DOIs	https://doi.org/10.1179/1743294414Y.0000000424
Publication status	Published - 1 Jan 2016

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Keywords

Co films
Co precursor
Magnetic characteristics
MOCVD
Vapour pressure

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Cite this

Dorovskikh, S. I., Hairullin, R. R., Sysoev, S. V., Kriventsov, V. V., Panin, A. V., Shubin, Y. V., ... Korenev, S. V. (2016). MOCVD growth and study of magnetic Co films. Surface Engineering, 32(1), 8-14. https://doi.org/10.1179/1743294414Y.0000000424

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abstract = "The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.",

keywords = "Co films, Co precursor, Magnetic characteristics, MOCVD, Vapour pressure",

author = "Dorovskikh, {S. I.} and Hairullin, {R. R.} and Sysoev, {S. V.} and Kriventsov, {V. V.} and Panin, {A. V.} and Shubin, {Y. V.} and Morozova, {N. B.} and Gelfond, {N. V.} and Korenev, {S. V.}",

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AU - Dorovskikh, S. I.

AU - Hairullin, R. R.

AU - Sysoev, S. V.

AU - Kriventsov, V. V.

AU - Panin, A. V.

AU - Shubin, Y. V.

AU - Morozova, N. B.

AU - Gelfond, N. V.

AU - Korenev, S. V.

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N2 - The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.

AB - The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.

KW - Co films

KW - Co precursor

KW - Magnetic characteristics

KW - MOCVD

KW - Vapour pressure

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Access to Document

10.1179/1743294414Y.0000000424