Abstract
The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.
| Original language | English |
|---|---|
| Pages (from-to) | 8-14 |
| Number of pages | 7 |
| Journal | Surface Engineering |
| Volume | 32 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Jan 2016 |
Keywords
- Co films
- Co precursor
- Magnetic characteristics
- MOCVD
- Vapour pressure
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
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Dorovskikh, S. I., Hairullin, R. R., Sysoev, S. V., Kriventsov, V. V., Panin, A. V., Shubin, Y. V., Morozova, N. B., Gelfond, N. V., & Korenev, S. V. (2016). MOCVD growth and study of magnetic Co films. Surface Engineering, 32(1), 8-14. https://doi.org/10.1179/1743294414Y.0000000424