MOCVD growth and study of magnetic Co films

S. I. Dorovskikh, R. R. Hairullin, S. V. Sysoev, V. V. Kriventsov, A. V. Panin, Y. V. Shubin, N. B. Morozova, N. V. Gelfond, S. V. Korenev

Division for Experimental Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The Co(N'acN'ac)₂ complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.

Original language	English
Pages (from-to)	8-14
Number of pages	7
Journal	Surface Engineering
Volume	32
Issue number	1
DOIs	https://doi.org/10.1179/1743294414Y.0000000424
Publication status	Published - 1 Jan 2016

Keywords

Co films
Co precursor
Magnetic characteristics
MOCVD
Vapour pressure

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1179/1743294414Y.0000000424

Fingerprint Dive into the research topics of 'MOCVD growth and study of magnetic Co films'. Together they form a unique fingerprint.

Cite this

@article{a6798cd6757240019cc5db337dda6ebf,

title = "MOCVD growth and study of magnetic Co films",

abstract = "The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.",

keywords = "Co films, Co precursor, Magnetic characteristics, MOCVD, Vapour pressure",

author = "Dorovskikh, {S. I.} and Hairullin, {R. R.} and Sysoev, {S. V.} and Kriventsov, {V. V.} and Panin, {A. V.} and Shubin, {Y. V.} and Morozova, {N. B.} and Gelfond, {N. V.} and Korenev, {S. V.}",

year = "2016",

month = jan,

day = "1",

doi = "10.1179/1743294414Y.0000000424",

language = "English",

volume = "32",

pages = "8--14",

journal = "Surface Engineering",

issn = "0267-0844",

publisher = "Maney Publishing",

number = "1",

}

TY - JOUR

T1 - MOCVD growth and study of magnetic Co films

AU - Dorovskikh, S. I.

AU - Hairullin, R. R.

AU - Sysoev, S. V.

AU - Kriventsov, V. V.

AU - Panin, A. V.

AU - Shubin, Y. V.

AU - Morozova, N. B.

AU - Gelfond, N. V.

AU - Korenev, S. V.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.

AB - The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.

KW - Co films

KW - Co precursor

KW - Magnetic characteristics

KW - MOCVD

KW - Vapour pressure

UR - http://www.scopus.com/inward/record.url?scp=84959360718&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84959360718&partnerID=8YFLogxK

U2 - 10.1179/1743294414Y.0000000424

DO - 10.1179/1743294414Y.0000000424

M3 - Article

AN - SCOPUS:84959360718

VL - 32

SP - 8

EP - 14

JO - Surface Engineering

JF - Surface Engineering

SN - 0267-0844

IS - 1

ER -