Abstract
The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.
| Original language | English |
|---|---|
| Pages (from-to) | 8-14 |
| Number of pages | 7 |
| Journal | Surface Engineering |
| Volume | 32 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Jan 2016 |
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Keywords
- Co films
- Co precursor
- Magnetic characteristics
- MOCVD
- Vapour pressure
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
Cite this
MOCVD growth and study of magnetic Co films. / Dorovskikh, S. I.; Hairullin, R. R.; Sysoev, S. V.; Kriventsov, V. V.; Panin, A. V.; Shubin, Y. V.; Morozova, N. B.; Gelfond, N. V.; Korenev, S. V.
In: Surface Engineering, Vol. 32, No. 1, 01.01.2016, p. 8-14.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - MOCVD growth and study of magnetic Co films
AU - Dorovskikh, S. I.
AU - Hairullin, R. R.
AU - Sysoev, S. V.
AU - Kriventsov, V. V.
AU - Panin, A. V.
AU - Shubin, Y. V.
AU - Morozova, N. B.
AU - Gelfond, N. V.
AU - Korenev, S. V.
PY - 2016/1/1
Y1 - 2016/1/1
N2 - The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.
AB - The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.
KW - Co films
KW - Co precursor
KW - Magnetic characteristics
KW - MOCVD
KW - Vapour pressure
UR - http://www.scopus.com/inward/record.url?scp=84959360718&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84959360718&partnerID=8YFLogxK
U2 - 10.1179/1743294414Y.0000000424
DO - 10.1179/1743294414Y.0000000424
M3 - Article
VL - 32
SP - 8
EP - 14
JO - Surface Engineering
JF - Surface Engineering
SN - 0267-0844
IS - 1
ER -