Migration of implanted hydrogen in beryllium under irradiation with accelerated nitrogen ions

I. P. Chernov, Yu P. Cherdantsev

Research output: Contribution to journalArticle

Abstract

Migration of implanted hydrogen in beryllium under irradiation with 12-MeV nitrogen ions was investigated by the recoil nuclei method. Hydrogen was implanted with an energy of 10 ke V and doses of 1.7·1017-1018 cm-2 at temperatures of 25 and 400°C. The depth profiles and the total hydrogen content were measured at the beginning and end of ion-beam irradiation with the dose ΦN ≈ 1014 cm-2. Experimental distributions of the hydrogen impurity were compared with the calculated depth profiles. The hydrogen diffusivity in beryllium was found to be about 7·10-15 cm2·s-1.

Original languageEnglish
Pages (from-to)1406-1408
Number of pages3
JournalBulletin of the Russian Academy of Sciences: Physics
Volume70
Issue number8
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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