Abstract
Relatively high temperatures even up to 500 C are required to obtain bismuth vanadate (BiVO4) films with the scheelite monoclinic (s-m) structure that shows the highest photocatalytic activity. This requirement limits the possible choice of substrates. Moreover, high quality thin layers of crystalline BiVO4 cannot be prepared with current methods. In this study a light-induced crystallization approach is presented, which is a step toward preparation and patterning of BiVO4 (s-m) films for applications on plastic substrates. Thin films of amorphous BiVO4 are prepared by pulsed laser deposition. The possibility of using green (514.7 nm) laser illumination for crystallization of BiVO4 is investigated. The laser-induced phase transition is tracked using Raman spectroscopy. The results are compared with those obtained from thermally annealed samples, crystalline structure of which is confirmed by measuring X-ray diffraction. The homogeneity and quality of crystallization are verified using micro-Raman spectroscopy imaging, while time-dependent experiments reveal the crystallization rate. The conductivity of the crystallized region is investigated using conductive atomic force microscopy. A strong increase in the conductivity is found in the patterned regions. Experimental results demonstrate the possibility of using the laser-induced crystallization of BiVO4 to prepare patterns of improved conductivity and semiconducting properties in comparison to amorphous surroundings. The possibility of light-induced crystallization and micropatterning of amorphous bismuth vanadate (BiVO4) is presented. The photocrystallization process is tracked in situ using Raman spectroscopy. The conducting properties of amorphous and crystalline BiVO4 are determined using conducting atomic force microscopy. The micropatterned regions exhibit higher conductivity. The photocrystallization process leads to crystallites with scheelite monoclinic structure, which can be applied in photocatalysis.
| Original language | English |
|---|---|
| Article number | 1500509 |
| Journal | Advanced Materials Interfaces |
| Volume | 3 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 23 Feb 2016 |
| Externally published | Yes |
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Keywords
- bismuth vanadate
- laser-induced crystallization
- micropatterning
- thin films
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering
Cite this
Micropatterning of BiVO4 Thin Films Using Laser-Induced Crystallization. / Trzciński, Konrad; Rodriguez, Raul D.; Schmidt, Constance; Rahaman, Mahfujur; Sawczak, Mirosław; Lisowska-Oleksiak, Anna; Gasiorowski, Jacek; Zahn, Dietrich R.T.
In: Advanced Materials Interfaces, Vol. 3, No. 4, 1500509, 23.02.2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Micropatterning of BiVO4 Thin Films Using Laser-Induced Crystallization
AU - Trzciński, Konrad
AU - Rodriguez, Raul D.
AU - Schmidt, Constance
AU - Rahaman, Mahfujur
AU - Sawczak, Mirosław
AU - Lisowska-Oleksiak, Anna
AU - Gasiorowski, Jacek
AU - Zahn, Dietrich R.T.
PY - 2016/2/23
Y1 - 2016/2/23
N2 - Relatively high temperatures even up to 500 C are required to obtain bismuth vanadate (BiVO4) films with the scheelite monoclinic (s-m) structure that shows the highest photocatalytic activity. This requirement limits the possible choice of substrates. Moreover, high quality thin layers of crystalline BiVO4 cannot be prepared with current methods. In this study a light-induced crystallization approach is presented, which is a step toward preparation and patterning of BiVO4 (s-m) films for applications on plastic substrates. Thin films of amorphous BiVO4 are prepared by pulsed laser deposition. The possibility of using green (514.7 nm) laser illumination for crystallization of BiVO4 is investigated. The laser-induced phase transition is tracked using Raman spectroscopy. The results are compared with those obtained from thermally annealed samples, crystalline structure of which is confirmed by measuring X-ray diffraction. The homogeneity and quality of crystallization are verified using micro-Raman spectroscopy imaging, while time-dependent experiments reveal the crystallization rate. The conductivity of the crystallized region is investigated using conductive atomic force microscopy. A strong increase in the conductivity is found in the patterned regions. Experimental results demonstrate the possibility of using the laser-induced crystallization of BiVO4 to prepare patterns of improved conductivity and semiconducting properties in comparison to amorphous surroundings. The possibility of light-induced crystallization and micropatterning of amorphous bismuth vanadate (BiVO4) is presented. The photocrystallization process is tracked in situ using Raman spectroscopy. The conducting properties of amorphous and crystalline BiVO4 are determined using conducting atomic force microscopy. The micropatterned regions exhibit higher conductivity. The photocrystallization process leads to crystallites with scheelite monoclinic structure, which can be applied in photocatalysis.
AB - Relatively high temperatures even up to 500 C are required to obtain bismuth vanadate (BiVO4) films with the scheelite monoclinic (s-m) structure that shows the highest photocatalytic activity. This requirement limits the possible choice of substrates. Moreover, high quality thin layers of crystalline BiVO4 cannot be prepared with current methods. In this study a light-induced crystallization approach is presented, which is a step toward preparation and patterning of BiVO4 (s-m) films for applications on plastic substrates. Thin films of amorphous BiVO4 are prepared by pulsed laser deposition. The possibility of using green (514.7 nm) laser illumination for crystallization of BiVO4 is investigated. The laser-induced phase transition is tracked using Raman spectroscopy. The results are compared with those obtained from thermally annealed samples, crystalline structure of which is confirmed by measuring X-ray diffraction. The homogeneity and quality of crystallization are verified using micro-Raman spectroscopy imaging, while time-dependent experiments reveal the crystallization rate. The conductivity of the crystallized region is investigated using conductive atomic force microscopy. A strong increase in the conductivity is found in the patterned regions. Experimental results demonstrate the possibility of using the laser-induced crystallization of BiVO4 to prepare patterns of improved conductivity and semiconducting properties in comparison to amorphous surroundings. The possibility of light-induced crystallization and micropatterning of amorphous bismuth vanadate (BiVO4) is presented. The photocrystallization process is tracked in situ using Raman spectroscopy. The conducting properties of amorphous and crystalline BiVO4 are determined using conducting atomic force microscopy. The micropatterned regions exhibit higher conductivity. The photocrystallization process leads to crystallites with scheelite monoclinic structure, which can be applied in photocatalysis.
KW - bismuth vanadate
KW - laser-induced crystallization
KW - micropatterning
KW - thin films
UR - http://www.scopus.com/inward/record.url?scp=84959558174&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84959558174&partnerID=8YFLogxK
U2 - 10.1002/admi.201500509
DO - 10.1002/admi.201500509
M3 - Article
AN - SCOPUS:84959558174
VL - 3
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
SN - 2196-7350
IS - 4
M1 - 1500509
ER -