Melting and Recrystallization of Implanted Si under High-Energy Ion-Beam Irradiation

R. M. Bayazitov, L. Kh Antonova, I. B. Khaibullin, R. G. Latypov, G. E. Remnev

Research output: Contribution to journalArticle

Abstract

The diffusion and activation of ion-implanted P and B in Si under high-power (>107 W/cm2) pulsed ion-beam irradiation with a pulse duration of 10-8 to 10-7 s were studied. The volume absorption of C+ and H+ ion energy was found to extend melting and recrystallization to a depth notably greater than that in the case of nanosecond laser irradiation. The solidification rate remains high, and heavily doped layers with a carrier concentration of (2-3) × 1021 cm-3 are formed. The impurity redistribution under pulsed treatment was computer simulated, and the thermal stability of the formed layers was assessed.

Original languageEnglish
Pages (from-to)946-950
Number of pages5
JournalInorganic Materials
Volume34
Issue number9
Publication statusPublished - Sep 1998

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Ion beams
Melting
Irradiation
Ions
Laser beam effects
Carrier concentration
Solidification
Thermodynamic stability
Chemical activation
Impurities

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Bayazitov, R. M., Antonova, L. K., Khaibullin, I. B., Latypov, R. G., & Remnev, G. E. (1998). Melting and Recrystallization of Implanted Si under High-Energy Ion-Beam Irradiation. Inorganic Materials, 34(9), 946-950.

Melting and Recrystallization of Implanted Si under High-Energy Ion-Beam Irradiation. / Bayazitov, R. M.; Antonova, L. Kh; Khaibullin, I. B.; Latypov, R. G.; Remnev, G. E.

In: Inorganic Materials, Vol. 34, No. 9, 09.1998, p. 946-950.

Research output: Contribution to journalArticle

Bayazitov, RM, Antonova, LK, Khaibullin, IB, Latypov, RG & Remnev, GE 1998, 'Melting and Recrystallization of Implanted Si under High-Energy Ion-Beam Irradiation', Inorganic Materials, vol. 34, no. 9, pp. 946-950.
Bayazitov RM, Antonova LK, Khaibullin IB, Latypov RG, Remnev GE. Melting and Recrystallization of Implanted Si under High-Energy Ion-Beam Irradiation. Inorganic Materials. 1998 Sep;34(9):946-950.
Bayazitov, R. M. ; Antonova, L. Kh ; Khaibullin, I. B. ; Latypov, R. G. ; Remnev, G. E. / Melting and Recrystallization of Implanted Si under High-Energy Ion-Beam Irradiation. In: Inorganic Materials. 1998 ; Vol. 34, No. 9. pp. 946-950.
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