Melt nonstoichiometry and defect structure of ZnGeP2 crystals

G. A. Verozubova, A. Yu Trofimov, E. M. Trukhanov, A. V. Kolesnikov, A. O. Okunev, Yu F. Ivanov, P. R J Galtier, S. A. Said Hassani

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The defect structure of ZnGeP2 crystals grown from a melt by the vertical Bridgman method has been investigated. A deviation of the melt composition from stoichiometric leads to the formation of striations and the inclusions of other phases which are observed as structures (chains) oriented parallel to the growth axis. According to the microanalysis data, the inclusion composition corresponds to a mixture of ZnGeP2, Zn3P 2, and Ge. Nanoinclusions of germanium phosphide are detected by transmission electron microscopy. X-ray topography reveals defects of four types. The main defects in the central part of an ingot are related to the composition fluctuations, and the newly formed dislocations are basically single ones. Most dislocations are formed at the crystal periphery.

Original languageEnglish
Pages (from-to)65-70
Number of pages6
JournalCrystallography Reports
Volume55
Issue number1
DOIs
Publication statusPublished - Jan 2010

Fingerprint

Defect structures
Crystals
defects
Chemical analysis
inclusions
Germanium
crystals
Defects
phosphides
Crystal growth from melt
Bridgman method
striation
Microanalysis
ingots
Ingots
Dislocations (crystals)
microanalysis
Topography
germanium
topography

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Verozubova, G. A., Trofimov, A. Y., Trukhanov, E. M., Kolesnikov, A. V., Okunev, A. O., Ivanov, Y. F., ... Said Hassani, S. A. (2010). Melt nonstoichiometry and defect structure of ZnGeP2 crystals. Crystallography Reports, 55(1), 65-70. https://doi.org/10.1134/S1063774510010116

Melt nonstoichiometry and defect structure of ZnGeP2 crystals. / Verozubova, G. A.; Trofimov, A. Yu; Trukhanov, E. M.; Kolesnikov, A. V.; Okunev, A. O.; Ivanov, Yu F.; Galtier, P. R J; Said Hassani, S. A.

In: Crystallography Reports, Vol. 55, No. 1, 01.2010, p. 65-70.

Research output: Contribution to journalArticle

Verozubova, GA, Trofimov, AY, Trukhanov, EM, Kolesnikov, AV, Okunev, AO, Ivanov, YF, Galtier, PRJ & Said Hassani, SA 2010, 'Melt nonstoichiometry and defect structure of ZnGeP2 crystals', Crystallography Reports, vol. 55, no. 1, pp. 65-70. https://doi.org/10.1134/S1063774510010116
Verozubova GA, Trofimov AY, Trukhanov EM, Kolesnikov AV, Okunev AO, Ivanov YF et al. Melt nonstoichiometry and defect structure of ZnGeP2 crystals. Crystallography Reports. 2010 Jan;55(1):65-70. https://doi.org/10.1134/S1063774510010116
Verozubova, G. A. ; Trofimov, A. Yu ; Trukhanov, E. M. ; Kolesnikov, A. V. ; Okunev, A. O. ; Ivanov, Yu F. ; Galtier, P. R J ; Said Hassani, S. A. / Melt nonstoichiometry and defect structure of ZnGeP2 crystals. In: Crystallography Reports. 2010 ; Vol. 55, No. 1. pp. 65-70.
@article{bb2cb3bba1974a418d9a772b805d05ac,
title = "Melt nonstoichiometry and defect structure of ZnGeP2 crystals",
abstract = "The defect structure of ZnGeP2 crystals grown from a melt by the vertical Bridgman method has been investigated. A deviation of the melt composition from stoichiometric leads to the formation of striations and the inclusions of other phases which are observed as structures (chains) oriented parallel to the growth axis. According to the microanalysis data, the inclusion composition corresponds to a mixture of ZnGeP2, Zn3P 2, and Ge. Nanoinclusions of germanium phosphide are detected by transmission electron microscopy. X-ray topography reveals defects of four types. The main defects in the central part of an ingot are related to the composition fluctuations, and the newly formed dislocations are basically single ones. Most dislocations are formed at the crystal periphery.",
author = "Verozubova, {G. A.} and Trofimov, {A. Yu} and Trukhanov, {E. M.} and Kolesnikov, {A. V.} and Okunev, {A. O.} and Ivanov, {Yu F.} and Galtier, {P. R J} and {Said Hassani}, {S. A.}",
year = "2010",
month = "1",
doi = "10.1134/S1063774510010116",
language = "English",
volume = "55",
pages = "65--70",
journal = "Crystallography Reports",
issn = "1063-7745",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "1",

}

TY - JOUR

T1 - Melt nonstoichiometry and defect structure of ZnGeP2 crystals

AU - Verozubova, G. A.

AU - Trofimov, A. Yu

AU - Trukhanov, E. M.

AU - Kolesnikov, A. V.

AU - Okunev, A. O.

AU - Ivanov, Yu F.

AU - Galtier, P. R J

AU - Said Hassani, S. A.

PY - 2010/1

Y1 - 2010/1

N2 - The defect structure of ZnGeP2 crystals grown from a melt by the vertical Bridgman method has been investigated. A deviation of the melt composition from stoichiometric leads to the formation of striations and the inclusions of other phases which are observed as structures (chains) oriented parallel to the growth axis. According to the microanalysis data, the inclusion composition corresponds to a mixture of ZnGeP2, Zn3P 2, and Ge. Nanoinclusions of germanium phosphide are detected by transmission electron microscopy. X-ray topography reveals defects of four types. The main defects in the central part of an ingot are related to the composition fluctuations, and the newly formed dislocations are basically single ones. Most dislocations are formed at the crystal periphery.

AB - The defect structure of ZnGeP2 crystals grown from a melt by the vertical Bridgman method has been investigated. A deviation of the melt composition from stoichiometric leads to the formation of striations and the inclusions of other phases which are observed as structures (chains) oriented parallel to the growth axis. According to the microanalysis data, the inclusion composition corresponds to a mixture of ZnGeP2, Zn3P 2, and Ge. Nanoinclusions of germanium phosphide are detected by transmission electron microscopy. X-ray topography reveals defects of four types. The main defects in the central part of an ingot are related to the composition fluctuations, and the newly formed dislocations are basically single ones. Most dislocations are formed at the crystal periphery.

UR - http://www.scopus.com/inward/record.url?scp=77649110562&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77649110562&partnerID=8YFLogxK

U2 - 10.1134/S1063774510010116

DO - 10.1134/S1063774510010116

M3 - Article

AN - SCOPUS:77649110562

VL - 55

SP - 65

EP - 70

JO - Crystallography Reports

JF - Crystallography Reports

SN - 1063-7745

IS - 1

ER -