Abstract
The long-term reliability of power devices for applications in the automotive industry is limited by the electro-thermal and/or thermo-mechanical aging of the metallic parts. In the present work, we characterize the bonding wire and source metallization degradation of power MOSFETs-based devices under accelerated aging conditions, through electron and ion microscopy. The metal degradation is driven by an enhanced self-diffusion of aluminium (Al) atoms along the grain boundaries and a generalized fatigue crack propagation from the surface down to the silicon (Si) bulk. The metallization under the wire bonds is a critical location because it is initially plastically deformed during the bonding process. In addition, the wire-metal interface presents several imperfections, such as small cavities and Al oxide residues. During the electro-thermal cycles, they could be the starting point for harmful cracks that run along the interface (and eventually cause the wire lift-off or the cracking of the substrate). Whichever the propagation direction, the generation of these cracks locally increases the device resistance and temperature, and accelerates the aging process until failure.
| Original language | English |
|---|---|
| Pages (from-to) | 507-511 |
| Number of pages | 5 |
| Journal | Microelectronics Reliability |
| Volume | 76-77 |
| DOIs | |
| Publication status | Published - 1 Sep 2017 |
| Externally published | Yes |
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Keywords
- Curvature experiment
- Failure analysis
- Focused Ion Beam (FIB)
- Metallization microstructure aging
- Power device
- Scanning Electron Microscopy (SEM)
- Temperature cycles
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Safety, Risk, Reliability and Quality
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cite this
Mechanisms of power module source metal degradation during electro-thermal aging. / Ruffilli, R.; Berkani, M.; Dupuy, P.; Lefebvre, S.; Weber, Y.; Legros, M.
In: Microelectronics Reliability, Vol. 76-77, 01.09.2017, p. 507-511.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Mechanisms of power module source metal degradation during electro-thermal aging
AU - Ruffilli, R.
AU - Berkani, M.
AU - Dupuy, P.
AU - Lefebvre, S.
AU - Weber, Y.
AU - Legros, M.
PY - 2017/9/1
Y1 - 2017/9/1
N2 - The long-term reliability of power devices for applications in the automotive industry is limited by the electro-thermal and/or thermo-mechanical aging of the metallic parts. In the present work, we characterize the bonding wire and source metallization degradation of power MOSFETs-based devices under accelerated aging conditions, through electron and ion microscopy. The metal degradation is driven by an enhanced self-diffusion of aluminium (Al) atoms along the grain boundaries and a generalized fatigue crack propagation from the surface down to the silicon (Si) bulk. The metallization under the wire bonds is a critical location because it is initially plastically deformed during the bonding process. In addition, the wire-metal interface presents several imperfections, such as small cavities and Al oxide residues. During the electro-thermal cycles, they could be the starting point for harmful cracks that run along the interface (and eventually cause the wire lift-off or the cracking of the substrate). Whichever the propagation direction, the generation of these cracks locally increases the device resistance and temperature, and accelerates the aging process until failure.
AB - The long-term reliability of power devices for applications in the automotive industry is limited by the electro-thermal and/or thermo-mechanical aging of the metallic parts. In the present work, we characterize the bonding wire and source metallization degradation of power MOSFETs-based devices under accelerated aging conditions, through electron and ion microscopy. The metal degradation is driven by an enhanced self-diffusion of aluminium (Al) atoms along the grain boundaries and a generalized fatigue crack propagation from the surface down to the silicon (Si) bulk. The metallization under the wire bonds is a critical location because it is initially plastically deformed during the bonding process. In addition, the wire-metal interface presents several imperfections, such as small cavities and Al oxide residues. During the electro-thermal cycles, they could be the starting point for harmful cracks that run along the interface (and eventually cause the wire lift-off or the cracking of the substrate). Whichever the propagation direction, the generation of these cracks locally increases the device resistance and temperature, and accelerates the aging process until failure.
KW - Curvature experiment
KW - Failure analysis
KW - Focused Ion Beam (FIB)
KW - Metallization microstructure aging
KW - Power device
KW - Scanning Electron Microscopy (SEM)
KW - Temperature cycles
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UR - http://www.scopus.com/inward/citedby.url?scp=85024481537&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2017.06.086
DO - 10.1016/j.microrel.2017.06.086
M3 - Article
VL - 76-77
SP - 507
EP - 511
JO - Microelectronics Reliability
JF - Microelectronics Reliability
SN - 0026-2714
ER -