Abstract
It was found that the negative repetitive pulsed biasing of a substrate with respect to the adjacent plasma significantly reduce the MPs content on surface. The decrease of MPs on the negative potential substrate surface is caused by several different physical mechanisms. Up to 10% of macroparticles (MPs) can be repulsed from the plasma-substrate voltage drop after being negatively charged in plasma. The MPs surface density on substrate can be significantly reduced after MPs interaction with negatively biased metal surface. This physical mechanism of negatively charged MPs electrostatic repulsion disappears when tungsten grid is used to create a sheath near the substrate surface. Reduction of MPs surface density almost by half takes a place due to ion sputtering. The decrease of MPs surface density by factor of 12 was achieved after the treatment of substrate for 2 min.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012 |
| DOIs | |
| Publication status | Published - 2012 |
| Event | 2012 7th International Forum on Strategic Technology, IFOST 2012 - Tomsk, Russian Federation Duration: 18 Sep 2012 → 21 Sep 2012 |
Other
| Other | 2012 7th International Forum on Strategic Technology, IFOST 2012 |
|---|---|
| Country | Russian Federation |
| City | Tomsk |
| Period | 18.9.12 → 21.9.12 |
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Keywords
- high-frequency short-pulse negative bias potencial
- macroparticle
- surface density
- vacuum-arc plasma
ASJC Scopus subject areas
- Management of Technology and Innovation
Cite this
Mechanisms and regularities of the vacuum arc macroparticles behavior near and on a substrate, immersed in plasma. / Ryabchikov, A. I.; Sivin, Denis Olegovich; Bumagina, A. I.
Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012. 2012. 6357762.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Mechanisms and regularities of the vacuum arc macroparticles behavior near and on a substrate, immersed in plasma
AU - Ryabchikov, A. I.
AU - Sivin, Denis Olegovich
AU - Bumagina, A. I.
PY - 2012
Y1 - 2012
N2 - It was found that the negative repetitive pulsed biasing of a substrate with respect to the adjacent plasma significantly reduce the MPs content on surface. The decrease of MPs on the negative potential substrate surface is caused by several different physical mechanisms. Up to 10% of macroparticles (MPs) can be repulsed from the plasma-substrate voltage drop after being negatively charged in plasma. The MPs surface density on substrate can be significantly reduced after MPs interaction with negatively biased metal surface. This physical mechanism of negatively charged MPs electrostatic repulsion disappears when tungsten grid is used to create a sheath near the substrate surface. Reduction of MPs surface density almost by half takes a place due to ion sputtering. The decrease of MPs surface density by factor of 12 was achieved after the treatment of substrate for 2 min.
AB - It was found that the negative repetitive pulsed biasing of a substrate with respect to the adjacent plasma significantly reduce the MPs content on surface. The decrease of MPs on the negative potential substrate surface is caused by several different physical mechanisms. Up to 10% of macroparticles (MPs) can be repulsed from the plasma-substrate voltage drop after being negatively charged in plasma. The MPs surface density on substrate can be significantly reduced after MPs interaction with negatively biased metal surface. This physical mechanism of negatively charged MPs electrostatic repulsion disappears when tungsten grid is used to create a sheath near the substrate surface. Reduction of MPs surface density almost by half takes a place due to ion sputtering. The decrease of MPs surface density by factor of 12 was achieved after the treatment of substrate for 2 min.
KW - high-frequency short-pulse negative bias potencial
KW - macroparticle
KW - surface density
KW - vacuum-arc plasma
UR - http://www.scopus.com/inward/record.url?scp=84871830961&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84871830961&partnerID=8YFLogxK
U2 - 10.1109/IFOST.2012.6357762
DO - 10.1109/IFOST.2012.6357762
M3 - Conference contribution
AN - SCOPUS:84871830961
SN - 9781467317702
BT - Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012
ER -