Abstract
It was found that the negative repetitive pulsed biasing of a substrate with respect to the adjacent plasma significantly reduce the MPs content on surface. The decrease of MPs on the negative potential substrate surface is caused by several different physical mechanisms. Up to 10% of macroparticles (MPs) can be repulsed from the plasma-substrate voltage drop after being negatively charged in plasma. The MPs surface density on substrate can be significantly reduced after MPs interaction with negatively biased metal surface. This physical mechanism of negatively charged MPs electrostatic repulsion disappears when tungsten grid is used to create a sheath near the substrate surface. Reduction of MPs surface density almost by half takes a place due to ion sputtering. The decrease of MPs surface density by factor of 12 was achieved after the treatment of substrate for 2 min.
Original language | English |
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Title of host publication | Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012 |
DOIs | |
Publication status | Published - 2012 |
Event | 2012 7th International Forum on Strategic Technology, IFOST 2012 - Tomsk, Russian Federation Duration: 18 Sep 2012 → 21 Sep 2012 |
Other
Other | 2012 7th International Forum on Strategic Technology, IFOST 2012 |
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Country | Russian Federation |
City | Tomsk |
Period | 18.9.12 → 21.9.12 |
Keywords
- high-frequency short-pulse negative bias potencial
- macroparticle
- surface density
- vacuum-arc plasma
ASJC Scopus subject areas
- Management of Technology and Innovation