Measurements of parametric X-rays from relativistic electrons in silicon crystals

Yu N. Adishchev, A. N. Didenko, V. V. Mun, G. A. Pleshkov, A. P. Potylitsin, V. K. Tomchakov, S. R. Uglov, S. A. Vorobiev

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Abstract

Spectral and angular distributions of parametric X-rays have been measured for (200-900) MeV electrons from Si single crystal. The parametric X-rays were observed at an angle θ = 19° relative to the beam of electrons, which intersects the (110) or (111) Si crystallographic planes. The energetic dependence of the PX intensity was also obtained.

Original languageEnglish
Pages (from-to)49-55
Number of pages7
JournalNuclear Inst. and Methods in Physics Research, B
Volume21
Issue number1-4
DOIs
Publication statusPublished - 1987

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ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Adishchev, Y. N., Didenko, A. N., Mun, V. V., Pleshkov, G. A., Potylitsin, A. P., Tomchakov, V. K., ... Vorobiev, S. A. (1987). Measurements of parametric X-rays from relativistic electrons in silicon crystals. Nuclear Inst. and Methods in Physics Research, B, 21(1-4), 49-55. https://doi.org/10.1016/0168-583X(87)90138-8