Measurements of parametric X-rays from relativistic electrons in silicon crystals

Yu N. Adishchev, A. N. Didenko, V. V. Mun, G. A. Pleshkov, A. P. Potylitsin, V. K. Tomchakov, S. R. Uglov, S. A. Vorobiev

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


Spectral and angular distributions of parametric X-rays have been measured for (200-900) MeV electrons from Si single crystal. The parametric X-rays were observed at an angle θ = 19° relative to the beam of electrons, which intersects the (110) or (111) Si crystallographic planes. The energetic dependence of the PX intensity was also obtained.

Original languageEnglish
Pages (from-to)49-55
Number of pages7
JournalNuclear Inst. and Methods in Physics Research, B
Issue number1-4
Publication statusPublished - 1987

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

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