Abstract
Spectral distributions of parametric X-rays (PX) have been measured for 900 MeV electrons transmitted through a Si crystal. A displacement of the PX spectral line was observed with the crystal rotation and in scanning PX radiation reflection by a detector. A high degree of linear polarization (P = 0.8) of parametric X-rays was obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 130-136 |
| Number of pages | 7 |
| Journal | Nuclear Inst. and Methods in Physics Research, B |
| Volume | 44 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1989 |
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Instrumentation
- Surfaces and Interfaces
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Adishchev, Y. N., Verzilov, V. A., Potylitsyn, A. P., Uglov, S. R., & Vorobyev, S. A. (1989). Measurement of spectral and polarization characteristics of parametric X-rays in a Si crystal. Nuclear Inst. and Methods in Physics Research, B, 44(2), 130-136. https://doi.org/10.1016/0168-583X(89)90417-5