Maximum switching frequency choice for IGBT used in ZCS mode

S. Lefebvre, F. Forest, J. P. Chante

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

In the laboratory we have developed quasi-resonant converters using Z.C.S.(Zero Current Switching) mode. In these converters, operating at medium power and frequency range ( a few KW and about 100 KHz), we used the IGBT (Insulated Gate Bipolar Transistor) as a resonant thyristor. The experiment shows a frequency limit: higher frequencies lead to component failure by thermal instability for Punch-Through IGBT. We show that the frequency limitation is due to a phenomenon occurring in the bipolar transistor part of the IGBT: The charges injected into the component during the conduction phase have not all disappeared by recombination when the voltage is applied to the components. We have studies the variation of these charges and of the losses versus the temperature of the component in order to explain the thermal instability. The results allow us to predict the maximum working frequency of the IGBT in ZCS mode, while avoiding failure of the studied component. The results are discussed and an IGBT, included in a forward resonant converter, has been experimentally studied to check the results. First, we show the different behaviors of Punch-Through and Non-Punch-Through components. Thermal instability is impossible with NPT components. Such a study is shown to be the most efficient way of choosing the best adapted component to high frequency applications.

Original languageEnglish
Title of host publicationMaterials and Devices
Editors Anon
PublisherPubl by IEE
Pages356-361
Number of pages6
Edition377
ISBN (Print)0852965842
Publication statusPublished - 1 Dec 1993
Externally publishedYes
EventProceedings of the 5th European Conference on Power Electronics and Applications - Brighton, Engl
Duration: 13 Sep 199316 Sep 1993

Publication series

NameIEE Conference Publication
Number377
Volume2
ISSN (Print)0537-9987

Conference

ConferenceProceedings of the 5th European Conference on Power Electronics and Applications
CityBrighton, Engl
Period13.9.9316.9.93

Fingerprint

Insulated gate bipolar transistors (IGBT)
Switching frequency
Bipolar transistors
Thyristors
Zero current switching
Electric potential
Hot Temperature
Experiments
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Lefebvre, S., Forest, F., & Chante, J. P. (1993). Maximum switching frequency choice for IGBT used in ZCS mode. In Anon (Ed.), Materials and Devices (377 ed., pp. 356-361). (IEE Conference Publication; Vol. 2, No. 377). Publ by IEE.

Maximum switching frequency choice for IGBT used in ZCS mode. / Lefebvre, S.; Forest, F.; Chante, J. P.

Materials and Devices. ed. / Anon. 377. ed. Publ by IEE, 1993. p. 356-361 (IEE Conference Publication; Vol. 2, No. 377).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lefebvre, S, Forest, F & Chante, JP 1993, Maximum switching frequency choice for IGBT used in ZCS mode. in Anon (ed.), Materials and Devices. 377 edn, IEE Conference Publication, no. 377, vol. 2, Publ by IEE, pp. 356-361, Proceedings of the 5th European Conference on Power Electronics and Applications, Brighton, Engl, 13.9.93.
Lefebvre S, Forest F, Chante JP. Maximum switching frequency choice for IGBT used in ZCS mode. In Anon, editor, Materials and Devices. 377 ed. Publ by IEE. 1993. p. 356-361. (IEE Conference Publication; 377).
Lefebvre, S. ; Forest, F. ; Chante, J. P. / Maximum switching frequency choice for IGBT used in ZCS mode. Materials and Devices. editor / Anon. 377. ed. Publ by IEE, 1993. pp. 356-361 (IEE Conference Publication; 377).
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