Abstract
In the laboratory we have developed quasi-resonant converters using Z.C.S.(Zero Current Switching) mode. In these converters, operating at medium power and frequency range ( a few KW and about 100 KHz), we used the IGBT (Insulated Gate Bipolar Transistor) as a resonant thyristor. The experiment shows a frequency limit: higher frequencies lead to component failure by thermal instability for Punch-Through IGBT. We show that the frequency limitation is due to a phenomenon occurring in the bipolar transistor part of the IGBT: The charges injected into the component during the conduction phase have not all disappeared by recombination when the voltage is applied to the components. We have studies the variation of these charges and of the losses versus the temperature of the component in order to explain the thermal instability. The results allow us to predict the maximum working frequency of the IGBT in ZCS mode, while avoiding failure of the studied component. The results are discussed and an IGBT, included in a forward resonant converter, has been experimentally studied to check the results. First, we show the different behaviors of Punch-Through and Non-Punch-Through components. Thermal instability is impossible with NPT components. Such a study is shown to be the most efficient way of choosing the best adapted component to high frequency applications.
| Original language | English |
|---|---|
| Title of host publication | Materials and Devices |
| Editors | Anon |
| Publisher | Publ by IEE |
| Pages | 356-361 |
| Number of pages | 6 |
| Edition | 377 |
| ISBN (Print) | 0852965842 |
| Publication status | Published - 1 Dec 1993 |
| Externally published | Yes |
| Event | Proceedings of the 5th European Conference on Power Electronics and Applications - Brighton, Engl Duration: 13 Sep 1993 → 16 Sep 1993 |
Publication series
| Name | IEE Conference Publication |
|---|---|
| Number | 377 |
| Volume | 2 |
| ISSN (Print) | 0537-9987 |
Conference
| Conference | Proceedings of the 5th European Conference on Power Electronics and Applications |
|---|---|
| City | Brighton, Engl |
| Period | 13.9.93 → 16.9.93 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Maximum switching frequency choice for IGBT used in ZCS mode. / Lefebvre, S.; Forest, F.; Chante, J. P.
Materials and Devices. ed. / Anon. 377. ed. Publ by IEE, 1993. p. 356-361 (IEE Conference Publication; Vol. 2, No. 377).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Maximum switching frequency choice for IGBT used in ZCS mode
AU - Lefebvre, S.
AU - Forest, F.
AU - Chante, J. P.
PY - 1993/12/1
Y1 - 1993/12/1
N2 - In the laboratory we have developed quasi-resonant converters using Z.C.S.(Zero Current Switching) mode. In these converters, operating at medium power and frequency range ( a few KW and about 100 KHz), we used the IGBT (Insulated Gate Bipolar Transistor) as a resonant thyristor. The experiment shows a frequency limit: higher frequencies lead to component failure by thermal instability for Punch-Through IGBT. We show that the frequency limitation is due to a phenomenon occurring in the bipolar transistor part of the IGBT: The charges injected into the component during the conduction phase have not all disappeared by recombination when the voltage is applied to the components. We have studies the variation of these charges and of the losses versus the temperature of the component in order to explain the thermal instability. The results allow us to predict the maximum working frequency of the IGBT in ZCS mode, while avoiding failure of the studied component. The results are discussed and an IGBT, included in a forward resonant converter, has been experimentally studied to check the results. First, we show the different behaviors of Punch-Through and Non-Punch-Through components. Thermal instability is impossible with NPT components. Such a study is shown to be the most efficient way of choosing the best adapted component to high frequency applications.
AB - In the laboratory we have developed quasi-resonant converters using Z.C.S.(Zero Current Switching) mode. In these converters, operating at medium power and frequency range ( a few KW and about 100 KHz), we used the IGBT (Insulated Gate Bipolar Transistor) as a resonant thyristor. The experiment shows a frequency limit: higher frequencies lead to component failure by thermal instability for Punch-Through IGBT. We show that the frequency limitation is due to a phenomenon occurring in the bipolar transistor part of the IGBT: The charges injected into the component during the conduction phase have not all disappeared by recombination when the voltage is applied to the components. We have studies the variation of these charges and of the losses versus the temperature of the component in order to explain the thermal instability. The results allow us to predict the maximum working frequency of the IGBT in ZCS mode, while avoiding failure of the studied component. The results are discussed and an IGBT, included in a forward resonant converter, has been experimentally studied to check the results. First, we show the different behaviors of Punch-Through and Non-Punch-Through components. Thermal instability is impossible with NPT components. Such a study is shown to be the most efficient way of choosing the best adapted component to high frequency applications.
UR - http://www.scopus.com/inward/record.url?scp=0027836365&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027836365&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0027836365
SN - 0852965842
T3 - IEE Conference Publication
SP - 356
EP - 361
BT - Materials and Devices
A2 - Anon, null
PB - Publ by IEE
ER -