Abstract
This paper deals with the mass spectrometric characterization of atoms, radicals and ions generated in the RF magnetron discharges sputtering metal targets in Ne, Ar, Kr and Xe gases. In magnetron discharges different kinds of species such as atoms, radicals and positive and negative ions according to the target material and sputtering gas pressure can be generated. The mass spectrometry of the magnetron discharge, which gives the detailed information on these species, is of key importance for the development of new advanced thin films. The amount of individual atoms, radicals and ions and the ion energy distribution as a function of flow and pressure of the sputtering gas, and the magnetron power is discussed in detail. This article shows (1) the ion distribution functions of gas and sputtered target material ions as a function of sputtering gas pressure, (2) the evolution of the amount of single-ionized and double-ionized atoms of gases and metals generated in the RF discharge during sputtering of Ag films in various inert gases as a function of gas pressure, and (3) the contamination of the sputtered metallic films by the oxygen from a residual gas atmosphere in the deposition chamber at low film deposition rates.
| Original language | English |
|---|---|
| Pages (from-to) | 438-443 |
| Number of pages | 6 |
| Journal | Vacuum |
| Volume | 143 |
| DOIs | |
| Publication status | Published - 1 Sep 2017 |
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ASJC Scopus subject areas
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
Cite this
Mass spectrometry investigation of magnetron sputtering discharges. / Pokorný, P.; Musil, J.; Lančok, J.; Fitl, P.; Novotný, M.; Bulíř, J.; Vlček, J.
In: Vacuum, Vol. 143, 01.09.2017, p. 438-443.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Mass spectrometry investigation of magnetron sputtering discharges
AU - Pokorný, P.
AU - Musil, J.
AU - Lančok, J.
AU - Fitl, P.
AU - Novotný, M.
AU - Bulíř, J.
AU - Vlček, J.
PY - 2017/9/1
Y1 - 2017/9/1
N2 - This paper deals with the mass spectrometric characterization of atoms, radicals and ions generated in the RF magnetron discharges sputtering metal targets in Ne, Ar, Kr and Xe gases. In magnetron discharges different kinds of species such as atoms, radicals and positive and negative ions according to the target material and sputtering gas pressure can be generated. The mass spectrometry of the magnetron discharge, which gives the detailed information on these species, is of key importance for the development of new advanced thin films. The amount of individual atoms, radicals and ions and the ion energy distribution as a function of flow and pressure of the sputtering gas, and the magnetron power is discussed in detail. This article shows (1) the ion distribution functions of gas and sputtered target material ions as a function of sputtering gas pressure, (2) the evolution of the amount of single-ionized and double-ionized atoms of gases and metals generated in the RF discharge during sputtering of Ag films in various inert gases as a function of gas pressure, and (3) the contamination of the sputtered metallic films by the oxygen from a residual gas atmosphere in the deposition chamber at low film deposition rates.
AB - This paper deals with the mass spectrometric characterization of atoms, radicals and ions generated in the RF magnetron discharges sputtering metal targets in Ne, Ar, Kr and Xe gases. In magnetron discharges different kinds of species such as atoms, radicals and positive and negative ions according to the target material and sputtering gas pressure can be generated. The mass spectrometry of the magnetron discharge, which gives the detailed information on these species, is of key importance for the development of new advanced thin films. The amount of individual atoms, radicals and ions and the ion energy distribution as a function of flow and pressure of the sputtering gas, and the magnetron power is discussed in detail. This article shows (1) the ion distribution functions of gas and sputtered target material ions as a function of sputtering gas pressure, (2) the evolution of the amount of single-ionized and double-ionized atoms of gases and metals generated in the RF discharge during sputtering of Ag films in various inert gases as a function of gas pressure, and (3) the contamination of the sputtered metallic films by the oxygen from a residual gas atmosphere in the deposition chamber at low film deposition rates.
UR - http://www.scopus.com/inward/record.url?scp=85021811235&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85021811235&partnerID=8YFLogxK
U2 - 10.1016/j.vacuum.2017.06.032
DO - 10.1016/j.vacuum.2017.06.032
M3 - Article
VL - 143
SP - 438
EP - 443
JO - Vacuum
JF - Vacuum
SN - 0042-207X
ER -