Main principles of developing exploitation models of semiconductor devices

A. V. Gradoboev, A. V. Simonova

Research output: Contribution to journalConference articlepeer-review

Abstract

The paper represents primary tasks, solutions of which allow to develop the exploitation modes of semiconductor devices taking into account complex and combined influence of ionizing irradiation and operation factors. The structure of the exploitation model of the semiconductor device is presented, which is based on radiation and reliability models. Furthermore, it was shown that the exploitation model should take into account complex and combine influence of various ionizing irradiation types and operation factors. The algorithm of developing the exploitation model of the semiconductor devices is proposed. The possibility of creating the radiation model of Schottky barrier diode, Schottky field-effect transistor and Gunn diode is shown based on the available experimental data. The basic exploitation model of IR-LEDs based upon double AlGaAs heterostructures is represented. The practical application of the exploitation models will allow to output the electronic products with guaranteed operational properties.

Original languageEnglish
Article number012025
JournalIOP Conference Series: Materials Science and Engineering
Volume363
Issue number1
DOIs
Publication statusPublished - 24 May 2018
Event2nd International Conference on Cognitive Robotics - Tomsk, Russian Federation
Duration: 22 Nov 201725 Nov 2017

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

Fingerprint Dive into the research topics of 'Main principles of developing exploitation models of semiconductor devices'. Together they form a unique fingerprint.

Cite this