Magnetron sputtering of TiOxNy films

D. Heřman, J. Šícha, J. Musil

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

This article reports on the characterization and preparation of N-doped titanium dioxide (TiO2) films by reactive magnetron sputtering from Ti(99.5) targets in a mixture of Ar/O2/N2 atmosphere on unheated glass substrates. A dual magnetron system supplied by a dc bipolar pulsed power source was used to sputter the TiOxNy films. The amount of N in the TiOxNy film ranges from 5 to 40 at%. Its structure was measured using X-ray diffraction (XRD), the optical band gap was calculated from Tauc plots and the decrease of the water contact angle αir after the film activation by UV irradiation was investigated as a function of at% of N in the TiOxNy film. The yellow-coloured TiOxNy films with high (≈8 at%) amount of N exhibited a strong decrease of the band gap Eg down to 2.7 eV. A significant decrease of the water contact angle αir after UV irradiation has been observed for 2 μm thick transparent nanocrystalline (anatase+rutile) N-doped TiO2 films containing less than 6 at% of N.

Original languageEnglish
Pages (from-to)285-290
Number of pages6
JournalVacuum
Volume81
Issue number3
DOIs
Publication statusPublished - 24 Oct 2006

Fingerprint

Magnetron sputtering
magnetron sputtering
Titanium dioxide
Contact angle
Irradiation
irradiation
Water
Reactive sputtering
Optical band gaps
titanium oxides
anatase
rutile
water
Energy gap
plots
Chemical activation
activation
atmospheres
X ray diffraction
Glass

Keywords

  • Hydrophilicity
  • Magnetron sputtering
  • Optical band gap
  • Structure
  • TiON films
  • Transmission spectra

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Cite this

Magnetron sputtering of TiOxNy films. / Heřman, D.; Šícha, J.; Musil, J.

In: Vacuum, Vol. 81, No. 3, 24.10.2006, p. 285-290.

Research output: Contribution to journalArticle

Heřman, D. ; Šícha, J. ; Musil, J. / Magnetron sputtering of TiOxNy films. In: Vacuum. 2006 ; Vol. 81, No. 3. pp. 285-290.
@article{80c092822624475494423e76dce8588e,
title = "Magnetron sputtering of TiOxNy films",
abstract = "This article reports on the characterization and preparation of N-doped titanium dioxide (TiO2) films by reactive magnetron sputtering from Ti(99.5) targets in a mixture of Ar/O2/N2 atmosphere on unheated glass substrates. A dual magnetron system supplied by a dc bipolar pulsed power source was used to sputter the TiOxNy films. The amount of N in the TiOxNy film ranges from 5 to 40 at{\%}. Its structure was measured using X-ray diffraction (XRD), the optical band gap was calculated from Tauc plots and the decrease of the water contact angle αir after the film activation by UV irradiation was investigated as a function of at{\%} of N in the TiOxNy film. The yellow-coloured TiOxNy films with high (≈8 at{\%}) amount of N exhibited a strong decrease of the band gap Eg down to 2.7 eV. A significant decrease of the water contact angle αir after UV irradiation has been observed for 2 μm thick transparent nanocrystalline (anatase+rutile) N-doped TiO2 films containing less than 6 at{\%} of N.",
keywords = "Hydrophilicity, Magnetron sputtering, Optical band gap, Structure, TiON films, Transmission spectra",
author = "D. Heřman and J. Š{\'i}cha and J. Musil",
year = "2006",
month = "10",
day = "24",
doi = "10.1016/j.vacuum.2006.04.004",
language = "English",
volume = "81",
pages = "285--290",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "3",

}

TY - JOUR

T1 - Magnetron sputtering of TiOxNy films

AU - Heřman, D.

AU - Šícha, J.

AU - Musil, J.

PY - 2006/10/24

Y1 - 2006/10/24

N2 - This article reports on the characterization and preparation of N-doped titanium dioxide (TiO2) films by reactive magnetron sputtering from Ti(99.5) targets in a mixture of Ar/O2/N2 atmosphere on unheated glass substrates. A dual magnetron system supplied by a dc bipolar pulsed power source was used to sputter the TiOxNy films. The amount of N in the TiOxNy film ranges from 5 to 40 at%. Its structure was measured using X-ray diffraction (XRD), the optical band gap was calculated from Tauc plots and the decrease of the water contact angle αir after the film activation by UV irradiation was investigated as a function of at% of N in the TiOxNy film. The yellow-coloured TiOxNy films with high (≈8 at%) amount of N exhibited a strong decrease of the band gap Eg down to 2.7 eV. A significant decrease of the water contact angle αir after UV irradiation has been observed for 2 μm thick transparent nanocrystalline (anatase+rutile) N-doped TiO2 films containing less than 6 at% of N.

AB - This article reports on the characterization and preparation of N-doped titanium dioxide (TiO2) films by reactive magnetron sputtering from Ti(99.5) targets in a mixture of Ar/O2/N2 atmosphere on unheated glass substrates. A dual magnetron system supplied by a dc bipolar pulsed power source was used to sputter the TiOxNy films. The amount of N in the TiOxNy film ranges from 5 to 40 at%. Its structure was measured using X-ray diffraction (XRD), the optical band gap was calculated from Tauc plots and the decrease of the water contact angle αir after the film activation by UV irradiation was investigated as a function of at% of N in the TiOxNy film. The yellow-coloured TiOxNy films with high (≈8 at%) amount of N exhibited a strong decrease of the band gap Eg down to 2.7 eV. A significant decrease of the water contact angle αir after UV irradiation has been observed for 2 μm thick transparent nanocrystalline (anatase+rutile) N-doped TiO2 films containing less than 6 at% of N.

KW - Hydrophilicity

KW - Magnetron sputtering

KW - Optical band gap

KW - Structure

KW - TiON films

KW - Transmission spectra

UR - http://www.scopus.com/inward/record.url?scp=33749136177&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749136177&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2006.04.004

DO - 10.1016/j.vacuum.2006.04.004

M3 - Article

VL - 81

SP - 285

EP - 290

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 3

ER -