Abstract
The possibility is examined of applying strong electron beams for luminescence control of InGaN/GaN lightemitting-diode heterostructures deposited on a sapphire substrate. It is shown that excitation of the samples by an electron beam from the heterostructure side leads to intense luminescence of the GaN and InGaN epitaxial layers, whose characteristics are determined by the prehistory of the samples. Induced emission is detected, arising in separate light-emitting-diode structures when the energy density of the electron beam reaches a threshold value. Transition to the induced emission regime in InGaN quantum wells is accompanied by the appearance of a luminous halo around the excitation zone.
| Original language | English |
|---|---|
| Pages (from-to) | 62-66 |
| Number of pages | 5 |
| Journal | Russian Physics Journal |
| Volume | 56 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Jun 2013 |
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Keywords
- gallium nitride
- high-current electron beams
- induced emission
- light-emitting-diode heterostructures
- luminescence
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Luminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam. / Oleshko, V. I.; Gorina, S. G.; Korepanov, V. I.; Lisitsyn, V. M.; Prudaev, I. A.; Tolbanov, O. P.
In: Russian Physics Journal, Vol. 56, No. 1, 01.06.2013, p. 62-66.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Luminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam
AU - Oleshko, V. I.
AU - Gorina, S. G.
AU - Korepanov, V. I.
AU - Lisitsyn, V. M.
AU - Prudaev, I. A.
AU - Tolbanov, O. P.
PY - 2013/6/1
Y1 - 2013/6/1
N2 - The possibility is examined of applying strong electron beams for luminescence control of InGaN/GaN lightemitting-diode heterostructures deposited on a sapphire substrate. It is shown that excitation of the samples by an electron beam from the heterostructure side leads to intense luminescence of the GaN and InGaN epitaxial layers, whose characteristics are determined by the prehistory of the samples. Induced emission is detected, arising in separate light-emitting-diode structures when the energy density of the electron beam reaches a threshold value. Transition to the induced emission regime in InGaN quantum wells is accompanied by the appearance of a luminous halo around the excitation zone.
AB - The possibility is examined of applying strong electron beams for luminescence control of InGaN/GaN lightemitting-diode heterostructures deposited on a sapphire substrate. It is shown that excitation of the samples by an electron beam from the heterostructure side leads to intense luminescence of the GaN and InGaN epitaxial layers, whose characteristics are determined by the prehistory of the samples. Induced emission is detected, arising in separate light-emitting-diode structures when the energy density of the electron beam reaches a threshold value. Transition to the induced emission regime in InGaN quantum wells is accompanied by the appearance of a luminous halo around the excitation zone.
KW - gallium nitride
KW - high-current electron beams
KW - induced emission
KW - light-emitting-diode heterostructures
KW - luminescence
UR - http://www.scopus.com/inward/record.url?scp=84884990044&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84884990044&partnerID=8YFLogxK
U2 - 10.1007/s11182-013-9995-6
DO - 10.1007/s11182-013-9995-6
M3 - Article
VL - 56
SP - 62
EP - 66
JO - Russian Physics Journal
JF - Russian Physics Journal
SN - 1064-8887
IS - 1
ER -