Luminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam

V. I. Oleshko, S. G. Gorina, V. I. Korepanov, V. M. Lisitsyn, I. A. Prudaev, O. P. Tolbanov

Division for Materials Science

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Abstract

The possibility is examined of applying strong electron beams for luminescence control of InGaN/GaN lightemitting-diode heterostructures deposited on a sapphire substrate. It is shown that excitation of the samples by an electron beam from the heterostructure side leads to intense luminescence of the GaN and InGaN epitaxial layers, whose characteristics are determined by the prehistory of the samples. Induced emission is detected, arising in separate light-emitting-diode structures when the energy density of the electron beam reaches a threshold value. Transition to the induced emission regime in InGaN quantum wells is accompanied by the appearance of a luminous halo around the excitation zone.

Original language	English
Pages (from-to)	62-66
Number of pages	5
Journal	Russian Physics Journal
Volume	56
Issue number	1
DOIs	https://doi.org/10.1007/s11182-013-9995-6
Publication status	Published - 1 Jun 2013

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Keywords

gallium nitride
high-current electron beams
induced emission
light-emitting-diode heterostructures
luminescence

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Oleshko, V. I., Gorina, S. G., Korepanov, V. I., Lisitsyn, V. M., Prudaev, I. A., & Tolbanov, O. P. (2013). Luminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam. Russian Physics Journal, 56(1), 62-66. https://doi.org/10.1007/s11182-013-9995-6

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title = "Luminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam",

abstract = "The possibility is examined of applying strong electron beams for luminescence control of InGaN/GaN lightemitting-diode heterostructures deposited on a sapphire substrate. It is shown that excitation of the samples by an electron beam from the heterostructure side leads to intense luminescence of the GaN and InGaN epitaxial layers, whose characteristics are determined by the prehistory of the samples. Induced emission is detected, arising in separate light-emitting-diode structures when the energy density of the electron beam reaches a threshold value. Transition to the induced emission regime in InGaN quantum wells is accompanied by the appearance of a luminous halo around the excitation zone.",

keywords = "gallium nitride, high-current electron beams, induced emission, light-emitting-diode heterostructures, luminescence",

author = "Oleshko, {V. I.} and Gorina, {S. G.} and Korepanov, {V. I.} and Lisitsyn, {V. M.} and Prudaev, {I. A.} and Tolbanov, {O. P.}",

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T1 - Luminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam

AU - Oleshko, V. I.

AU - Gorina, S. G.

AU - Korepanov, V. I.

AU - Lisitsyn, V. M.

AU - Prudaev, I. A.

AU - Tolbanov, O. P.

PY - 2013/6/1

Y1 - 2013/6/1

N2 - The possibility is examined of applying strong electron beams for luminescence control of InGaN/GaN lightemitting-diode heterostructures deposited on a sapphire substrate. It is shown that excitation of the samples by an electron beam from the heterostructure side leads to intense luminescence of the GaN and InGaN epitaxial layers, whose characteristics are determined by the prehistory of the samples. Induced emission is detected, arising in separate light-emitting-diode structures when the energy density of the electron beam reaches a threshold value. Transition to the induced emission regime in InGaN quantum wells is accompanied by the appearance of a luminous halo around the excitation zone.

AB - The possibility is examined of applying strong electron beams for luminescence control of InGaN/GaN lightemitting-diode heterostructures deposited on a sapphire substrate. It is shown that excitation of the samples by an electron beam from the heterostructure side leads to intense luminescence of the GaN and InGaN epitaxial layers, whose characteristics are determined by the prehistory of the samples. Induced emission is detected, arising in separate light-emitting-diode structures when the energy density of the electron beam reaches a threshold value. Transition to the induced emission regime in InGaN quantum wells is accompanied by the appearance of a luminous halo around the excitation zone.

KW - gallium nitride

KW - high-current electron beams

KW - induced emission

KW - light-emitting-diode heterostructures

KW - luminescence

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10.1007/s11182-013-9995-6