The research deals with the regularities for Cu3Ge compound formation under the low temperature treatment of a double-layer Cu/Ge system deposited on i-GaAs substrate in atomic hydrogen flow. The treatment of a Cu/Ge/i-GaAs system with layer thicknesses, respectively, of 122 and 78 nm, in atomic hydrogen with a flow rate of 1015 at.cm-2s-1 for a duration of 2.5-10 min at room temperature, leads to an interdiffusion of Cu and Ge and formation of a polycrystalline film containing stoichiometric phase Cu3Ge. The film consists of vertically oriented grains of dimensions 100-150 nm and has a minimum specific resistance of 4.5 μΩ cm. Variation in the treatment duration of Cu/Ge/i-GaAs samples in atomic hydrogen affects Cu and Ge distribution profiles, the phase composition of films formed, and the specific resistance of the latter. As observed, Cu3Ge compound synthesis at room temperature demonstrates the stimulative effects characteristic of atomic hydrogen treatment for both Cu and Ge diffusion and for the chemical reaction of Cu3Ge compound generation. Activation of these processes can be conditioned by the energy released during recombination of hydrogen atoms adsorbed on the surface of a Cu/Ge/i-GaAs sample.
|Journal||IOP Conference Series: Materials Science and Engineering|
|Publication status||Published - 2 Aug 2016|
|Event||8th International Scientific Conference on Issues of Physics and Technology in Science, Industry and Medicine - Tomsk, Russian Federation|
Duration: 1 Jun 2016 → 3 Jun 2016
ASJC Scopus subject areas
- Materials Science(all)