Abstract
The aim of the work is studying the impact of Gunn diodes thermocompression bonding conditions upon their resistance to being radiated with protons of various energies. It was established that the tough conditions of Gunn diodes thermocompression bonding results in local mechanic stresses introduced into the active layer of the device, reduction of electron mobility because of the faults introduction and, subsequently, to reduction of operating current, power of UHF generation, percentage of qualitative units production and general reduction of production efficiency of the devices with required characteristics. Irradiation of Gunn diodes produced under the tough conditions of thermocompression bonding with protons which energy is (40-60) MeV with an absorbed dose of (1-6)•102 Gy does not practically reduce the radiation resistance of Gunn diodes produced with application of the given technique. This technique can be recommended for all semiconductor devices on the base of GaAs, which parameters depend significantly upon the mobility of the electrons, to increase the efficiency of production.
| Original language | English |
|---|---|
| Article number | 012133 |
| Journal | Journal of Physics: Conference Series |
| Volume | 830 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 4 May 2017 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Local mechanical stress relaxation of Gunn diodes irradiated by protons. / Gradoboev, A. V.; Tesleva, E. P.
In: Journal of Physics: Conference Series, Vol. 830, No. 1, 012133, 04.05.2017.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Local mechanical stress relaxation of Gunn diodes irradiated by protons
AU - Gradoboev, A. V.
AU - Tesleva, E. P.
PY - 2017/5/4
Y1 - 2017/5/4
N2 - The aim of the work is studying the impact of Gunn diodes thermocompression bonding conditions upon their resistance to being radiated with protons of various energies. It was established that the tough conditions of Gunn diodes thermocompression bonding results in local mechanic stresses introduced into the active layer of the device, reduction of electron mobility because of the faults introduction and, subsequently, to reduction of operating current, power of UHF generation, percentage of qualitative units production and general reduction of production efficiency of the devices with required characteristics. Irradiation of Gunn diodes produced under the tough conditions of thermocompression bonding with protons which energy is (40-60) MeV with an absorbed dose of (1-6)•102 Gy does not practically reduce the radiation resistance of Gunn diodes produced with application of the given technique. This technique can be recommended for all semiconductor devices on the base of GaAs, which parameters depend significantly upon the mobility of the electrons, to increase the efficiency of production.
AB - The aim of the work is studying the impact of Gunn diodes thermocompression bonding conditions upon their resistance to being radiated with protons of various energies. It was established that the tough conditions of Gunn diodes thermocompression bonding results in local mechanic stresses introduced into the active layer of the device, reduction of electron mobility because of the faults introduction and, subsequently, to reduction of operating current, power of UHF generation, percentage of qualitative units production and general reduction of production efficiency of the devices with required characteristics. Irradiation of Gunn diodes produced under the tough conditions of thermocompression bonding with protons which energy is (40-60) MeV with an absorbed dose of (1-6)•102 Gy does not practically reduce the radiation resistance of Gunn diodes produced with application of the given technique. This technique can be recommended for all semiconductor devices on the base of GaAs, which parameters depend significantly upon the mobility of the electrons, to increase the efficiency of production.
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U2 - 10.1088/1742-6596/830/1/012133
DO - 10.1088/1742-6596/830/1/012133
M3 - Article
VL - 830
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012133
ER -