Local mechanical stress relaxation of Gunn diodes irradiated by protons

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The aim of the work is studying the impact of Gunn diodes thermocompression bonding conditions upon their resistance to being radiated with protons of various energies. It was established that the tough conditions of Gunn diodes thermocompression bonding results in local mechanic stresses introduced into the active layer of the device, reduction of electron mobility because of the faults introduction and, subsequently, to reduction of operating current, power of UHF generation, percentage of qualitative units production and general reduction of production efficiency of the devices with required characteristics. Irradiation of Gunn diodes produced under the tough conditions of thermocompression bonding with protons which energy is (40-60) MeV with an absorbed dose of (1-6)•102 Gy does not practically reduce the radiation resistance of Gunn diodes produced with application of the given technique. This technique can be recommended for all semiconductor devices on the base of GaAs, which parameters depend significantly upon the mobility of the electrons, to increase the efficiency of production.

Original languageEnglish
Article number012133
JournalJournal of Physics: Conference Series
Volume830
Issue number1
DOIs
Publication statusPublished - 4 May 2017

Fingerprint

Gunn diodes
stress relaxation
protons
radiation tolerance
proton energy
semiconductor devices
electron mobility
dosage
irradiation
electrons
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Local mechanical stress relaxation of Gunn diodes irradiated by protons. / Gradoboev, A. V.; Tesleva, E. P.

In: Journal of Physics: Conference Series, Vol. 830, No. 1, 012133, 04.05.2017.

Research output: Contribution to journalArticle

@article{126c4783fa5e4cad991a47716ee29c5f,
title = "Local mechanical stress relaxation of Gunn diodes irradiated by protons",
abstract = "The aim of the work is studying the impact of Gunn diodes thermocompression bonding conditions upon their resistance to being radiated with protons of various energies. It was established that the tough conditions of Gunn diodes thermocompression bonding results in local mechanic stresses introduced into the active layer of the device, reduction of electron mobility because of the faults introduction and, subsequently, to reduction of operating current, power of UHF generation, percentage of qualitative units production and general reduction of production efficiency of the devices with required characteristics. Irradiation of Gunn diodes produced under the tough conditions of thermocompression bonding with protons which energy is (40-60) MeV with an absorbed dose of (1-6)•102 Gy does not practically reduce the radiation resistance of Gunn diodes produced with application of the given technique. This technique can be recommended for all semiconductor devices on the base of GaAs, which parameters depend significantly upon the mobility of the electrons, to increase the efficiency of production.",
author = "Gradoboev, {A. V.} and Tesleva, {E. P.}",
year = "2017",
month = "5",
day = "4",
doi = "10.1088/1742-6596/830/1/012133",
language = "English",
volume = "830",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Local mechanical stress relaxation of Gunn diodes irradiated by protons

AU - Gradoboev, A. V.

AU - Tesleva, E. P.

PY - 2017/5/4

Y1 - 2017/5/4

N2 - The aim of the work is studying the impact of Gunn diodes thermocompression bonding conditions upon their resistance to being radiated with protons of various energies. It was established that the tough conditions of Gunn diodes thermocompression bonding results in local mechanic stresses introduced into the active layer of the device, reduction of electron mobility because of the faults introduction and, subsequently, to reduction of operating current, power of UHF generation, percentage of qualitative units production and general reduction of production efficiency of the devices with required characteristics. Irradiation of Gunn diodes produced under the tough conditions of thermocompression bonding with protons which energy is (40-60) MeV with an absorbed dose of (1-6)•102 Gy does not practically reduce the radiation resistance of Gunn diodes produced with application of the given technique. This technique can be recommended for all semiconductor devices on the base of GaAs, which parameters depend significantly upon the mobility of the electrons, to increase the efficiency of production.

AB - The aim of the work is studying the impact of Gunn diodes thermocompression bonding conditions upon their resistance to being radiated with protons of various energies. It was established that the tough conditions of Gunn diodes thermocompression bonding results in local mechanic stresses introduced into the active layer of the device, reduction of electron mobility because of the faults introduction and, subsequently, to reduction of operating current, power of UHF generation, percentage of qualitative units production and general reduction of production efficiency of the devices with required characteristics. Irradiation of Gunn diodes produced under the tough conditions of thermocompression bonding with protons which energy is (40-60) MeV with an absorbed dose of (1-6)•102 Gy does not practically reduce the radiation resistance of Gunn diodes produced with application of the given technique. This technique can be recommended for all semiconductor devices on the base of GaAs, which parameters depend significantly upon the mobility of the electrons, to increase the efficiency of production.

UR - http://www.scopus.com/inward/record.url?scp=85019989461&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85019989461&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/830/1/012133

DO - 10.1088/1742-6596/830/1/012133

M3 - Article

VL - 830

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012133

ER -