Abstract
We studied the onset of induced optical absorption in mono- and polycrystalline Y3Al5O12:Nd3+ samples upon irradiation by a nanosecond electron beam with electron energy of 250 keV and current density of 25 A/cm2. We show that in such crystalline samples, the fast electrons produce induced absorption between 1 and 4.2 eV expressed as a superposition of six adjacent elementary lines. We found that the induced absorption is due to electron transitions from the valence band to a local level around an O−-hole center, while the initial-phase (10−7−10−4 s) relaxation of the induced absorption is determined by quadratic recombination of conduction-band electrons with the O−-hole centers. The higher density of structural defects in the polycrystalline sample than the monocrystalline sample increases the band-electron lifetime against capture by O− centers.
Original language | English |
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Pages (from-to) | 318-322 |
Number of pages | 5 |
Journal | Journal of Optical Technology (A Translation of Opticheskii Zhurnal) |
Volume | 87 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1 May 2020 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Engineering(all)
- Computational Mathematics
- Applied Mathematics