Abstract
The purpose of this paper is to present an extensive study of three 1200 V silicon carbide (SiC) Power MOSFETs in non-destructive, but leading to degradations, short-circuit operation. Unusually, as compared with equivalent device built on silicon, the damage signature is a significant gate current increase but the components are still functional. In order to find the damage location, non-destructive and destructive methods have been carried out. The results converge to a local gate oxide breakdown caused by the important electrical and thermal stress during short-circuit operation leading to different failure mechanisms depending on the device design.
| Original language | English |
|---|---|
| Pages (from-to) | 500-506 |
| Number of pages | 7 |
| Journal | Microelectronics Reliability |
| Volume | 76-77 |
| DOIs | |
| Publication status | Published - 1 Sep 2017 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Safety, Risk, Reliability and Quality
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
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Cite this
Boige, F., Richardeau, F., Trémouilles, D., Lefebvre, S., & Guibaud, G. (2017). Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. Microelectronics Reliability, 76-77, 500-506. https://doi.org/10.1016/j.microrel.2017.06.085