Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

F. Boige, F. Richardeau, D. Trémouilles, S. Lefebvre, G. Guibaud

Research output: Contribution to journalArticle

13 Citations (Scopus)


The purpose of this paper is to present an extensive study of three 1200 V silicon carbide (SiC) Power MOSFETs in non-destructive, but leading to degradations, short-circuit operation. Unusually, as compared with equivalent device built on silicon, the damage signature is a significant gate current increase but the components are still functional. In order to find the damage location, non-destructive and destructive methods have been carried out. The results converge to a local gate oxide breakdown caused by the important electrical and thermal stress during short-circuit operation leading to different failure mechanisms depending on the device design.

Original languageEnglish
Pages (from-to)500-506
Number of pages7
JournalMicroelectronics Reliability
Publication statusPublished - 1 Sep 2017
Externally publishedYes


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this