Abstract
The purpose of this paper is to present an extensive study of three 1200 V silicon carbide (SiC) Power MOSFETs in non-destructive, but leading to degradations, short-circuit operation. Unusually, as compared with equivalent device built on silicon, the damage signature is a significant gate current increase but the components are still functional. In order to find the damage location, non-destructive and destructive methods have been carried out. The results converge to a local gate oxide breakdown caused by the important electrical and thermal stress during short-circuit operation leading to different failure mechanisms depending on the device design.
| Original language | English |
|---|---|
| Pages (from-to) | 500-506 |
| Number of pages | 7 |
| Journal | Microelectronics Reliability |
| Volume | 76-77 |
| DOIs | |
| Publication status | Published - 1 Sep 2017 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Safety, Risk, Reliability and Quality
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cite this
Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. / Boige, F.; Richardeau, F.; Trémouilles, D.; Lefebvre, S.; Guibaud, G.
In: Microelectronics Reliability, Vol. 76-77, 01.09.2017, p. 500-506.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation
AU - Boige, F.
AU - Richardeau, F.
AU - Trémouilles, D.
AU - Lefebvre, S.
AU - Guibaud, G.
PY - 2017/9/1
Y1 - 2017/9/1
N2 - The purpose of this paper is to present an extensive study of three 1200 V silicon carbide (SiC) Power MOSFETs in non-destructive, but leading to degradations, short-circuit operation. Unusually, as compared with equivalent device built on silicon, the damage signature is a significant gate current increase but the components are still functional. In order to find the damage location, non-destructive and destructive methods have been carried out. The results converge to a local gate oxide breakdown caused by the important electrical and thermal stress during short-circuit operation leading to different failure mechanisms depending on the device design.
AB - The purpose of this paper is to present an extensive study of three 1200 V silicon carbide (SiC) Power MOSFETs in non-destructive, but leading to degradations, short-circuit operation. Unusually, as compared with equivalent device built on silicon, the damage signature is a significant gate current increase but the components are still functional. In order to find the damage location, non-destructive and destructive methods have been carried out. The results converge to a local gate oxide breakdown caused by the important electrical and thermal stress during short-circuit operation leading to different failure mechanisms depending on the device design.
UR - http://www.scopus.com/inward/record.url?scp=85021783172&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85021783172&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2017.06.085
DO - 10.1016/j.microrel.2017.06.085
M3 - Article
AN - SCOPUS:85021783172
VL - 76-77
SP - 500
EP - 506
JO - Microelectronics Reliability
JF - Microelectronics Reliability
SN - 0026-2714
ER -