Abstract
The purpose of this paper is to present an extensive study of three 1200 V silicon carbide (SiC) Power MOSFETs in non-destructive, but leading to degradations, short-circuit operation. Unusually, as compared with equivalent device built on silicon, the damage signature is a significant gate current increase but the components are still functional. In order to find the damage location, non-destructive and destructive methods have been carried out. The results converge to a local gate oxide breakdown caused by the important electrical and thermal stress during short-circuit operation leading to different failure mechanisms depending on the device design.
Original language | English |
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Pages (from-to) | 500-506 |
Number of pages | 7 |
Journal | Microelectronics Reliability |
Volume | 76-77 |
DOIs | |
Publication status | Published - 1 Sep 2017 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Safety, Risk, Reliability and Quality
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering