Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

F. Boige, F. Richardeau, D. Trémouilles, S. Lefebvre, G. Guibaud

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The purpose of this paper is to present an extensive study of three 1200 V silicon carbide (SiC) Power MOSFETs in non-destructive, but leading to degradations, short-circuit operation. Unusually, as compared with equivalent device built on silicon, the damage signature is a significant gate current increase but the components are still functional. In order to find the damage location, non-destructive and destructive methods have been carried out. The results converge to a local gate oxide breakdown caused by the important electrical and thermal stress during short-circuit operation leading to different failure mechanisms depending on the device design.

Original languageEnglish
Pages (from-to)500-506
Number of pages7
JournalMicroelectronics Reliability
Volume76-77
DOIs
Publication statusPublished - 1 Sep 2017
Externally publishedYes

Fingerprint

short circuits
Silicon carbide
silicon carbides
Short circuit currents
Oxides
field effect transistors
damage
oxides
Silicon
thermal stresses
Thermal stress
breakdown
signatures
degradation
Degradation
silicon
Power MOSFET
silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. / Boige, F.; Richardeau, F.; Trémouilles, D.; Lefebvre, S.; Guibaud, G.

In: Microelectronics Reliability, Vol. 76-77, 01.09.2017, p. 500-506.

Research output: Contribution to journalArticle

Boige, F. ; Richardeau, F. ; Trémouilles, D. ; Lefebvre, S. ; Guibaud, G. / Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. In: Microelectronics Reliability. 2017 ; Vol. 76-77. pp. 500-506.
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