INVESTIGATION OF THE CHARGE STATE OF IMPURITY ATOMS IN SEMICONDUCTING MATERIALS BY POSITRON ANNIHILATION METHOD.

K. P. Aref'ev, S. A. Vorob'ev, A. N. Grishin, V. N. Klimov, A. T. Shaposhnikov, G. I. Etin, A. A. Tsio

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The positron annihilation method was used in a determination of the momentum distribution of the valence electrons of silicon impurities in gallium arsenide and in Al//xGa//1// minus //xAs solid solutions. The impurity atoms were in singly and doubly ionized states in the GaAs lattice. Positronium states were observed near structure defects in Al//xGa//1// minus //xAs:Si solid solutions.

Original languageEnglish
Title of host publicationSov Phys Semicond
Pages935-937
Number of pages3
Volume11
Edition8
Publication statusPublished - Aug 1977

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Aref'ev, K. P., Vorob'ev, S. A., Grishin, A. N., Klimov, V. N., Shaposhnikov, A. T., Etin, G. I., & Tsio, A. A. (1977). INVESTIGATION OF THE CHARGE STATE OF IMPURITY ATOMS IN SEMICONDUCTING MATERIALS BY POSITRON ANNIHILATION METHOD. In Sov Phys Semicond (8 ed., Vol. 11, pp. 935-937)