Investigation of the characteristics of CMOS ICs at low temperatures

S. V. Uchaikin

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

Certain types of complementary metal-oxide-semiconductor (CMOS) and high-speed complementary metal-oxide-semiconductor (HCMOS) integrated circuits (ICs) were investigated at temperatures T from 1.4 to 297 K. Basic parameters of integrated multiplexers operating at liquid helium temperature were measured. Integrated circuits of the K1564 and 74HC family fabricated by HCMOS technology exhibited the best characteristics at T = 4.2 K.

Original languageEnglish
Pages (from-to)581-584
Number of pages4
JournalInstruments and Experimental Techniques
Volume40
Issue number4
Publication statusPublished - Jul 1997
Externally publishedYes

Fingerprint

CMOS integrated circuits
integrated circuits
CMOS
Metals
high speed
Helium
Integrated circuits
multiplexing
liquid helium
Temperature
Liquids
temperature
Oxide semiconductors

ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Instrumentation

Cite this

Investigation of the characteristics of CMOS ICs at low temperatures. / Uchaikin, S. V.

In: Instruments and Experimental Techniques, Vol. 40, No. 4, 07.1997, p. 581-584.

Research output: Contribution to journal › Article

Uchaikin, SV 1997, 'Investigation of the characteristics of CMOS ICs at low temperatures', Instruments and Experimental Techniques, vol. 40, no. 4, pp. 581-584.
Uchaikin SV. Investigation of the characteristics of CMOS ICs at low temperatures. Instruments and Experimental Techniques. 1997 Jul;40(4):581-584.
Uchaikin, S. V. / Investigation of the characteristics of CMOS ICs at low temperatures. In: Instruments and Experimental Techniques. 1997 ; Vol. 40, No. 4. pp. 581-584.
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