Investigation of the characteristics of CMOS ICs at low temperatures

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Abstract

Certain types of complementary metal-oxide-semiconductor (CMOS) and high-speed complementary metal-oxide-semiconductor (HCMOS) integrated circuits (ICs) were investigated at temperatures T from 1.4 to 297 K. Basic parameters of integrated multiplexers operating at liquid helium temperature were measured. Integrated circuits of the K1564 and 74HC family fabricated by HCMOS technology exhibited the best characteristics at T = 4.2 K.

Original language	English
Pages (from-to)	581-584
Number of pages	4
Journal	Instruments and Experimental Techniques
Volume	40
Issue number	4
Publication status	Published - Jul 1997
Externally published	Yes

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ASJC Scopus subject areas

Engineering (miscellaneous)
Instrumentation

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Uchaikin, S. V. (1997). Investigation of the characteristics of CMOS ICs at low temperatures. Instruments and Experimental Techniques, 40(4), 581-584.

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abstract = "Certain types of complementary metal-oxide-semiconductor (CMOS) and high-speed complementary metal-oxide-semiconductor (HCMOS) integrated circuits (ICs) were investigated at temperatures T from 1.4 to 297 K. Basic parameters of integrated multiplexers operating at liquid helium temperature were measured. Integrated circuits of the K1564 and 74HC family fabricated by HCMOS technology exhibited the best characteristics at T = 4.2 K.",

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AB - Certain types of complementary metal-oxide-semiconductor (CMOS) and high-speed complementary metal-oxide-semiconductor (HCMOS) integrated circuits (ICs) were investigated at temperatures T from 1.4 to 297 K. Basic parameters of integrated multiplexers operating at liquid helium temperature were measured. Integrated circuits of the K1564 and 74HC family fabricated by HCMOS technology exhibited the best characteristics at T = 4.2 K.

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Investigation of the characteristics of CMOS ICs at low temperatures

Abstract

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ASJC Scopus subject areas

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