INVESTIGATION OF THE ANNHILATION OF POSITRONS IN DISTURBED SURFACE LAYERS OF GaAs.

A. A. Vorob'ev, K. P. Aref'ev, S. A. Vorob'ev, A. S. Karetnikov, E. P. Prokop'ev, Yu N. Kuznetsov, F. R. Khashimov, T. I. Markova

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Separation of the narrow component I//N from correlation curves obtained in the presence of a 14. 5 kG static magnetic field and measurements of the relative yield of the three-photon annihilation P//3// gamma were used in a study of the annhilation of positrons in disturbed surface layers of GaAs. These layers were subjected to the following treatments: a) grinding with an aqueous suspension of the M-5 Al//2O//3 abrasive powder; b) mechanical polishing with the ASM-1 diamond paste; c) chemomechanical polishing in an Al//2O//3 suspension; d) chemical polishing in a 1HF:3HNO//3:2H//2O mixture. The maximum values of I//N and P//3// gamma were obtained for samples which were chemically polished. These experimental observations, together with the proposed mechanism of positron annihilation in GaAs, led to the conclusion that an oxide film of complex composition was thicker on the chemically polished samples than on the samples subjected to the other three treatments.

Original languageEnglish
Title of host publicationSov Phys Semicond
Pages381-383
Number of pages3
Volume11
Edition4
Publication statusPublished - Apr 1977

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Vorob'ev, A. A., Aref'ev, K. P., Vorob'ev, S. A., Karetnikov, A. S., Prokop'ev, E. P., Kuznetsov, Y. N., Khashimov, F. R., & Markova, T. I. (1977). INVESTIGATION OF THE ANNHILATION OF POSITRONS IN DISTURBED SURFACE LAYERS OF GaAs. In Sov Phys Semicond (4 ed., Vol. 11, pp. 381-383)