Low energy, high intensity ion implantation method opens up unique opportunities for ion-doping of metals and alloys at depths of tens and hundreds of micrometers. Ion implantation at ion current densities of tens and hundreds of mA/cm2 is carried out at elevated temperatures of the surface layers of the irradiated target. High temperatures can lead to an increase in the grain size of crystalline materials and, as a result, to a degradation of material properties. One of the possible solutions to this problem seems to be a combination of high-intensity implantation of ions with subsequent exposure to the surface of a high-current electron beam. The paper presents the results of studies of the features of changes in the elemental composition and microstructure of titanium alloy during high-intensity implantation of nitrogen, aluminum ions of low and ultra-low energy. The influence of the target temperature regimes on the depth distribution of the implanted dopant and the structure of doped and matrix material is studied. The influence of subsequent modification of the ion-doped layer by the action on the surface of the pulsed high-current electron beams of microsecond duration is studied. The work presents the results of the studying the regularities of changes in the depth distribution of alloying elements, microstructure and phase composition of the modified and matrix layers by optical metallography, x-ray spectral and x-ray structural analysis.