The angular distributions of (1. 87 to 5. 7)Mev electrons channeled in 2 mu m Si crystals along (100), (110), and (111) atomic planes are measured. The half-width of measured angular distributions is defined by a critical Lindhard angle. A relation is obtained connecting those energies of electrons at which their angular distributions are similar for various atomic planes. The effect of a 'critical energy' under planar channeling of electrons is found and investigated.
|Number of pages||17|
|Journal||Physica Status Solidi (B) Basic Research|
|Publication status||Published - Jul 1987|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics