INVESTIGATION OF QUANTUM STATES OF FAST ELECTRONS UNDER PLANAR CHANNELING IN SILICON CRYSTALS.

V. I. Gridnev, V. V. Kaplin, V. G. Khlabutin, E. I. Rozum, S. A. Vorobiev

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The angular distributions of (1. 87 to 5. 7)Mev electrons channeled in 2 mu m Si crystals along (100), (110), and (111) atomic planes are measured. The half-width of measured angular distributions is defined by a critical Lindhard angle. A relation is obtained connecting those energies of electrons at which their angular distributions are similar for various atomic planes. The effect of a 'critical energy' under planar channeling of electrons is found and investigated.

Original languageEnglish
Pages (from-to)49-65
Number of pages17
JournalPhysica Status Solidi (B) Basic Research
Volume142
Issue number1
Publication statusPublished - Jul 1987

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Angular distribution
Silicon
angular distribution
Crystals
Electrons
silicon
crystals
electrons
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

INVESTIGATION OF QUANTUM STATES OF FAST ELECTRONS UNDER PLANAR CHANNELING IN SILICON CRYSTALS. / Gridnev, V. I.; Kaplin, V. V.; Khlabutin, V. G.; Rozum, E. I.; Vorobiev, S. A.

In: Physica Status Solidi (B) Basic Research, Vol. 142, No. 1, 07.1987, p. 49-65.

Research output: Contribution to journalArticle

Gridnev, V. I. ; Kaplin, V. V. ; Khlabutin, V. G. ; Rozum, E. I. ; Vorobiev, S. A. / INVESTIGATION OF QUANTUM STATES OF FAST ELECTRONS UNDER PLANAR CHANNELING IN SILICON CRYSTALS. In: Physica Status Solidi (B) Basic Research. 1987 ; Vol. 142, No. 1. pp. 49-65.
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