Investigation of defects in epitaxial InP layers grown on GaAs(100)

E. Yu Boyarko, V. M. Malutin, Yu Yu Kryuchkov, V. P. Koshcheev

Research output: Contribution to journalArticle

Abstract

The defects of epitaxial InP layer grown on GaAs(100) substrate has been studied using the Rutherford back-scattering of channeled ions (RBS/C). The azimuth misorientation (equal to 45°) of the layer with respect to a substrate has been observed. The information on a concentration profile of defects in depth is obtained on the base of RBS/C spectra.

Original languageEnglish
Pages (from-to)28-31
Number of pages4
JournalPoverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya
Issue number3
Publication statusPublished - 2005
Externally publishedYes

ASJC Scopus subject areas

  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Investigation of defects in epitaxial InP layers grown on GaAs(100)'. Together they form a unique fingerprint.

  • Cite this