The defects of epitaxial InP layer grown on GaAs(100) substrate has been studied using the Rutherford back-scattering of channeled ions (RBS/C). The azimuth misorientation (equal to 45°) of the layer with respect to a substrate has been observed. The information on a concentration profile of defects in depth is obtained on the base of RBS/C spectra.
|Number of pages||4|
|Journal||Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya|
|Publication status||Published - 2005|
ASJC Scopus subject areas
- Mechanical Engineering