Investigation of defects in epitaxial InP layers grown on GaAs(100)

E. Yu Boyarko, V. M. Malutin, Yu Yu Kryuchkov, V. P. Koshcheev

Research output: Contribution to journalArticle

Abstract

The defects of epitaxial InP layer grown on GaAs(100) substrate has been studied using the Rutherford back-scattering of channeled ions (RBS/C). The azimuth misorientation (equal to 45°) of the layer with respect to a substrate has been observed. The information on a concentration profile of defects in depth is obtained on the base of RBS/C spectra.

Original languageEnglish
Pages (from-to)28-31
Number of pages4
JournalPoverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya
Issue number3
Publication statusPublished - 2005
Externally publishedYes

Fingerprint

Epitaxial layers
Scattering
Defects
Ions
Substrates

ASJC Scopus subject areas

  • Mechanical Engineering

Cite this

Investigation of defects in epitaxial InP layers grown on GaAs(100). / Boyarko, E. Yu; Malutin, V. M.; Kryuchkov, Yu Yu; Koshcheev, V. P.

In: Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya, No. 3, 2005, p. 28-31.

Research output: Contribution to journalArticle

@article{8cb11ec6f63842ac94fd24d001f8886f,
title = "Investigation of defects in epitaxial InP layers grown on GaAs(100)",
abstract = "The defects of epitaxial InP layer grown on GaAs(100) substrate has been studied using the Rutherford back-scattering of channeled ions (RBS/C). The azimuth misorientation (equal to 45°) of the layer with respect to a substrate has been observed. The information on a concentration profile of defects in depth is obtained on the base of RBS/C spectra.",
author = "Boyarko, {E. Yu} and Malutin, {V. M.} and Kryuchkov, {Yu Yu} and Koshcheev, {V. P.}",
year = "2005",
language = "English",
pages = "28--31",
journal = "Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya",
issn = "0207-3528",
publisher = "Izdatel'stvo Nauka",
number = "3",

}

TY - JOUR

T1 - Investigation of defects in epitaxial InP layers grown on GaAs(100)

AU - Boyarko, E. Yu

AU - Malutin, V. M.

AU - Kryuchkov, Yu Yu

AU - Koshcheev, V. P.

PY - 2005

Y1 - 2005

N2 - The defects of epitaxial InP layer grown on GaAs(100) substrate has been studied using the Rutherford back-scattering of channeled ions (RBS/C). The azimuth misorientation (equal to 45°) of the layer with respect to a substrate has been observed. The information on a concentration profile of defects in depth is obtained on the base of RBS/C spectra.

AB - The defects of epitaxial InP layer grown on GaAs(100) substrate has been studied using the Rutherford back-scattering of channeled ions (RBS/C). The azimuth misorientation (equal to 45°) of the layer with respect to a substrate has been observed. The information on a concentration profile of defects in depth is obtained on the base of RBS/C spectra.

UR - http://www.scopus.com/inward/record.url?scp=24744440751&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24744440751&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:24744440751

SP - 28

EP - 31

JO - Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya

JF - Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya

SN - 0207-3528

IS - 3

ER -