Investigation of Changing Volt-Ampere Characteristics of AlGalnP Heterostructures with Multiple Quantum Wells under Ionizing Radiation

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Abstract

The results of research into degradation of volt-ampere characteristics of light emitting diodes produced on the base of AlGaInP heterostructures with multiple quantum wells are presented on the example of light emitting diodes (emission wavelengths 623 nm and 590 nm) under gamma quantum and fast neutron radiation in passive powering mode. The shifts of volt-ampere characteristics into the higher voltage range have been observed in conditions of increasing neutron fluence and radiation dose. The observed increase in the resistance of ohmic contacts is caused by the rising resistance of adjacent area, which in its turn results from the changing mobility of charge carriers. The latter varies with the growth of introduced defects under irradiation. Two different areas of current generation have been identified. A mechanism of current generation depends on injected charge carriers in the range of mid-level electron injection. Moreover, the range of high electron injection is distinguished by changing resistance of light emitting diode cores alongside with current generation conditioned by charge carrier injection.

Original languageEnglish
Article number012025
JournalIOP Conference Series: Materials Science and Engineering
Volume110
Issue number1
DOIs
Publication statusPublished - 23 Feb 2016

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Ionizing radiation
Charge carriers
Semiconductor quantum wells
Light emitting diodes
Heterojunctions
Electron injection
Neutrons
Ohmic contacts
Dosimetry
Irradiation
Radiation
Degradation
Wavelength
Defects
Electric potential

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

@article{9a3fdbdadfb04e9db49fd722945972c1,
title = "Investigation of Changing Volt-Ampere Characteristics of AlGalnP Heterostructures with Multiple Quantum Wells under Ionizing Radiation",
abstract = "The results of research into degradation of volt-ampere characteristics of light emitting diodes produced on the base of AlGaInP heterostructures with multiple quantum wells are presented on the example of light emitting diodes (emission wavelengths 623 nm and 590 nm) under gamma quantum and fast neutron radiation in passive powering mode. The shifts of volt-ampere characteristics into the higher voltage range have been observed in conditions of increasing neutron fluence and radiation dose. The observed increase in the resistance of ohmic contacts is caused by the rising resistance of adjacent area, which in its turn results from the changing mobility of charge carriers. The latter varies with the growth of introduced defects under irradiation. Two different areas of current generation have been identified. A mechanism of current generation depends on injected charge carriers in the range of mid-level electron injection. Moreover, the range of high electron injection is distinguished by changing resistance of light emitting diode cores alongside with current generation conditioned by charge carrier injection.",
author = "Gradoboev, {A. V.} and Ksenia Nikolaevna Orlova",
year = "2016",
month = "2",
day = "23",
doi = "10.1088/1757-899X/110/1/012025",
language = "English",
volume = "110",
journal = "IOP Conference Series: Materials Science and Engineering",
issn = "1757-8981",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Investigation of Changing Volt-Ampere Characteristics of AlGalnP Heterostructures with Multiple Quantum Wells under Ionizing Radiation

AU - Gradoboev, A. V.

AU - Orlova, Ksenia Nikolaevna

PY - 2016/2/23

Y1 - 2016/2/23

N2 - The results of research into degradation of volt-ampere characteristics of light emitting diodes produced on the base of AlGaInP heterostructures with multiple quantum wells are presented on the example of light emitting diodes (emission wavelengths 623 nm and 590 nm) under gamma quantum and fast neutron radiation in passive powering mode. The shifts of volt-ampere characteristics into the higher voltage range have been observed in conditions of increasing neutron fluence and radiation dose. The observed increase in the resistance of ohmic contacts is caused by the rising resistance of adjacent area, which in its turn results from the changing mobility of charge carriers. The latter varies with the growth of introduced defects under irradiation. Two different areas of current generation have been identified. A mechanism of current generation depends on injected charge carriers in the range of mid-level electron injection. Moreover, the range of high electron injection is distinguished by changing resistance of light emitting diode cores alongside with current generation conditioned by charge carrier injection.

AB - The results of research into degradation of volt-ampere characteristics of light emitting diodes produced on the base of AlGaInP heterostructures with multiple quantum wells are presented on the example of light emitting diodes (emission wavelengths 623 nm and 590 nm) under gamma quantum and fast neutron radiation in passive powering mode. The shifts of volt-ampere characteristics into the higher voltage range have been observed in conditions of increasing neutron fluence and radiation dose. The observed increase in the resistance of ohmic contacts is caused by the rising resistance of adjacent area, which in its turn results from the changing mobility of charge carriers. The latter varies with the growth of introduced defects under irradiation. Two different areas of current generation have been identified. A mechanism of current generation depends on injected charge carriers in the range of mid-level electron injection. Moreover, the range of high electron injection is distinguished by changing resistance of light emitting diode cores alongside with current generation conditioned by charge carrier injection.

UR - http://www.scopus.com/inward/record.url?scp=84971654899&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84971654899&partnerID=8YFLogxK

U2 - 10.1088/1757-899X/110/1/012025

DO - 10.1088/1757-899X/110/1/012025

M3 - Article

AN - SCOPUS:84971654899

VL - 110

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

SN - 1757-8981

IS - 1

M1 - 012025

ER -