Abstract
Self-organized, buried InAs quantum dots covered by an AlAs diffusion barrier were investigated under UHV conditions using grazing incidence X-ray diffraction. The experimental data is compared to the simulated results obtained by Finite Element Method and Distorted Wave Born Approximation. We have found that the simulated data could be compared to the experimental one only after convolution by the resolution element which can be estimated from the experiment. By adjusting the simulation parameters we were able to find good agreement between the simulated and the measured data.
| Original language | English |
|---|---|
| Pages (from-to) | 721-724 |
| Number of pages | 4 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 177 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 5 Jun 2012 |
| Externally published | Yes |
Keywords
- Annealing
- Grazing incidence X-ray diffraction
- Molecular beam epitaxy
- Self-organized quantum dots
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Fingerprint Dive into the research topics of 'Investigation of buried quantum dots using grazing incidence X-ray diffraction'. Together they form a unique fingerprint.
Cite this
Schroth, P., Slobodskyy, T., Grigoriev, D., Minkevich, A., Riotte, M., Lazarev, S., Fohtung, E., Hu, D. Z., Schaadt, D. M., & Baumbach, T. (2012). Investigation of buried quantum dots using grazing incidence X-ray diffraction. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 177(10), 721-724. https://doi.org/10.1016/j.mseb.2011.10.012