Investigation of buried quantum dots using grazing incidence X-ray diffraction

Abstract

Self-organized, buried InAs quantum dots covered by an AlAs diffusion barrier were investigated under UHV conditions using grazing incidence X-ray diffraction. The experimental data is compared to the simulated results obtained by Finite Element Method and Distorted Wave Born Approximation. We have found that the simulated data could be compared to the experimental one only after convolution by the resolution element which can be estimated from the experiment. By adjusting the simulation parameters we were able to find good agreement between the simulated and the measured data.

Original language	English
Pages (from-to)	721-724
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	177
Issue number	10
DOIs	https://doi.org/10.1016/j.mseb.2011.10.012
Publication status	Published - 5 Jun 2012
Externally published	Yes

Keywords

Annealing
Grazing incidence X-ray diffraction
Molecular beam epitaxy
Self-organized quantum dots

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanical Engineering
Mechanics of Materials

Access to Document

10.1016/j.mseb.2011.10.012

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Schroth, P., Slobodskyy, T., Grigoriev, D., Minkevich, A., Riotte, M., Lazarev, S., Fohtung, E., Hu, D. Z., Schaadt, D. M., & Baumbach, T. (2012). Investigation of buried quantum dots using grazing incidence X-ray diffraction. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 177(10), 721-724. https://doi.org/10.1016/j.mseb.2011.10.012

Investigation of buried quantum dots using grazing incidence X-ray diffraction. / Schroth, P.; Slobodskyy, T.; Grigoriev, D.; Minkevich, A.; Riotte, M.; Lazarev, S.; Fohtung, E.; Hu, D. Z.; Schaadt, D. M.; Baumbach, T.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 177, No. 10, 05.06.2012, p. 721-724.

Research output: Contribution to journal › Article › peer-review

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abstract = "Self-organized, buried InAs quantum dots covered by an AlAs diffusion barrier were investigated under UHV conditions using grazing incidence X-ray diffraction. The experimental data is compared to the simulated results obtained by Finite Element Method and Distorted Wave Born Approximation. We have found that the simulated data could be compared to the experimental one only after convolution by the resolution element which can be estimated from the experiment. By adjusting the simulation parameters we were able to find good agreement between the simulated and the measured data.",

keywords = "Annealing, Grazing incidence X-ray diffraction, Molecular beam epitaxy, Self-organized quantum dots",

author = "P. Schroth and T. Slobodskyy and D. Grigoriev and A. Minkevich and M. Riotte and S. Lazarev and E. Fohtung and Hu, {D. Z.} and Schaadt, {D. M.} and T. Baumbach",

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AU - Schroth, P.

AU - Slobodskyy, T.

AU - Grigoriev, D.

AU - Minkevich, A.

AU - Riotte, M.

AU - Lazarev, S.

AU - Fohtung, E.

AU - Hu, D. Z.

AU - Schaadt, D. M.

AU - Baumbach, T.

PY - 2012/6/5

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N2 - Self-organized, buried InAs quantum dots covered by an AlAs diffusion barrier were investigated under UHV conditions using grazing incidence X-ray diffraction. The experimental data is compared to the simulated results obtained by Finite Element Method and Distorted Wave Born Approximation. We have found that the simulated data could be compared to the experimental one only after convolution by the resolution element which can be estimated from the experiment. By adjusting the simulation parameters we were able to find good agreement between the simulated and the measured data.

AB - Self-organized, buried InAs quantum dots covered by an AlAs diffusion barrier were investigated under UHV conditions using grazing incidence X-ray diffraction. The experimental data is compared to the simulated results obtained by Finite Element Method and Distorted Wave Born Approximation. We have found that the simulated data could be compared to the experimental one only after convolution by the resolution element which can be estimated from the experiment. By adjusting the simulation parameters we were able to find good agreement between the simulated and the measured data.

KW - Annealing

KW - Grazing incidence X-ray diffraction

KW - Molecular beam epitaxy

KW - Self-organized quantum dots

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