Abstract
Self-organized, buried InAs quantum dots covered by an AlAs diffusion barrier were investigated under UHV conditions using grazing incidence X-ray diffraction. The experimental data is compared to the simulated results obtained by Finite Element Method and Distorted Wave Born Approximation. We have found that the simulated data could be compared to the experimental one only after convolution by the resolution element which can be estimated from the experiment. By adjusting the simulation parameters we were able to find good agreement between the simulated and the measured data.
| Original language | English |
|---|---|
| Pages (from-to) | 721-724 |
| Number of pages | 4 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 177 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 5 Jun 2012 |
| Externally published | Yes |
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Keywords
- Annealing
- Grazing incidence X-ray diffraction
- Molecular beam epitaxy
- Self-organized quantum dots
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
Investigation of buried quantum dots using grazing incidence X-ray diffraction. / Schroth, P.; Slobodskyy, T.; Grigoriev, D.; Minkevich, A.; Riotte, M.; Lazarev, S.; Fohtung, E.; Hu, D. Z.; Schaadt, D. M.; Baumbach, T.
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 177, No. 10, 05.06.2012, p. 721-724.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Investigation of buried quantum dots using grazing incidence X-ray diffraction
AU - Schroth, P.
AU - Slobodskyy, T.
AU - Grigoriev, D.
AU - Minkevich, A.
AU - Riotte, M.
AU - Lazarev, S.
AU - Fohtung, E.
AU - Hu, D. Z.
AU - Schaadt, D. M.
AU - Baumbach, T.
PY - 2012/6/5
Y1 - 2012/6/5
N2 - Self-organized, buried InAs quantum dots covered by an AlAs diffusion barrier were investigated under UHV conditions using grazing incidence X-ray diffraction. The experimental data is compared to the simulated results obtained by Finite Element Method and Distorted Wave Born Approximation. We have found that the simulated data could be compared to the experimental one only after convolution by the resolution element which can be estimated from the experiment. By adjusting the simulation parameters we were able to find good agreement between the simulated and the measured data.
AB - Self-organized, buried InAs quantum dots covered by an AlAs diffusion barrier were investigated under UHV conditions using grazing incidence X-ray diffraction. The experimental data is compared to the simulated results obtained by Finite Element Method and Distorted Wave Born Approximation. We have found that the simulated data could be compared to the experimental one only after convolution by the resolution element which can be estimated from the experiment. By adjusting the simulation parameters we were able to find good agreement between the simulated and the measured data.
KW - Annealing
KW - Grazing incidence X-ray diffraction
KW - Molecular beam epitaxy
KW - Self-organized quantum dots
UR - http://www.scopus.com/inward/record.url?scp=84861229210&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861229210&partnerID=8YFLogxK
U2 - 10.1016/j.mseb.2011.10.012
DO - 10.1016/j.mseb.2011.10.012
M3 - Article
VL - 177
SP - 721
EP - 724
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 10
ER -