Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications

Othman, S. Lefebvre, M. Berkani, Z. Khatir, A. Ibrahim, A. Bouzourene

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Abstract

This paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test.

Original languageEnglish
Title of host publication2013 15th European Conference on Power Electronics and Applications, EPE 2013
DOIs
Publication statusPublished - 17 Dec 2013
Externally publishedYes
Event2013 15th European Conference on Power Electronics and Applications, EPE 2013 - Lille, France
Duration: 2 Sep 20136 Sep 2013

Publication series

Name2013 15th European Conference on Power Electronics and Applications, EPE 2013

Conference

Conference2013 15th European Conference on Power Electronics and Applications, EPE 2013
CountryFrance
CityLille
Period2.9.136.9.13

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Keywords

  • Ageing
  • Device characterisation
  • MOSFET
  • Robustness
  • Silicon Carbide (SiC)

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Fuel Technology
  • Electrical and Electronic Engineering

Cite this

Othman, Lefebvre, S., Berkani, M., Khatir, Z., Ibrahim, A., & Bouzourene, A. (2013). Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications. In 2013 15th European Conference on Power Electronics and Applications, EPE 2013 [6634665] (2013 15th European Conference on Power Electronics and Applications, EPE 2013). https://doi.org/10.1109/EPE.2013.6634665