Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications

Abstract

This paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test.

Original language	English
Title of host publication	2013 15th European Conference on Power Electronics and Applications, EPE 2013
DOIs	https://doi.org/10.1109/EPE.2013.6634665
Publication status	Published - 17 Dec 2013
Externally published	Yes
Event	2013 15th European Conference on Power Electronics and Applications, EPE 2013 - Lille, France Duration: 2 Sep 2013 → 6 Sep 2013

Publication series

Name	2013 15th European Conference on Power Electronics and Applications, EPE 2013

Conference

Conference	2013 15th European Conference on Power Electronics and Applications, EPE 2013
Country	France
City	Lille
Period	2.9.13 → 6.9.13

Keywords

Ageing
Device characterisation
MOSFET
Robustness
Silicon Carbide (SiC)

ASJC Scopus subject areas

Energy Engineering and Power Technology
Fuel Technology
Electrical and Electronic Engineering

Access to Document

10.1109/EPE.2013.6634665

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Cite this

Othman, Lefebvre, S., Berkani, M., Khatir, Z., Ibrahim, A., & Bouzourene, A. (2013). Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications. In 2013 15th European Conference on Power Electronics and Applications, EPE 2013 [6634665] (2013 15th European Conference on Power Electronics and Applications, EPE 2013). https://doi.org/10.1109/EPE.2013.6634665

Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications. / Othman, ; Lefebvre, S.; Berkani, M.; Khatir, Z.; Ibrahim, A.; Bouzourene, A.

2013 15th European Conference on Power Electronics and Applications, EPE 2013. 2013. 6634665 (2013 15th European Conference on Power Electronics and Applications, EPE 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Othman, , Lefebvre, S, Berkani, M, Khatir, Z, Ibrahim, A & Bouzourene, A 2013, Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications. in 2013 15th European Conference on Power Electronics and Applications, EPE 2013., 6634665, 2013 15th European Conference on Power Electronics and Applications, EPE 2013, 2013 15th European Conference on Power Electronics and Applications, EPE 2013, Lille, France, 2.9.13. https://doi.org/10.1109/EPE.2013.6634665

@inproceedings{5a927d68ef4c41478c30ad1245edc7e3,

title = "Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications",

abstract = "This paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test.",

keywords = "Ageing, Device characterisation, MOSFET, Robustness, Silicon Carbide (SiC)",

author = "Othman and S. Lefebvre and M. Berkani and Z. Khatir and A. Ibrahim and A. Bouzourene",

year = "2013",

month = dec,

day = "17",

doi = "10.1109/EPE.2013.6634665",

language = "English",

isbn = "9781479901166",

series = "2013 15th European Conference on Power Electronics and Applications, EPE 2013",

booktitle = "2013 15th European Conference on Power Electronics and Applications, EPE 2013",

note = "2013 15th European Conference on Power Electronics and Applications, EPE 2013 ; Conference date: 02-09-2013 Through 06-09-2013",

}

TY - GEN

T1 - Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications

AU - Othman,

AU - Lefebvre, S.

AU - Berkani, M.

AU - Khatir, Z.

AU - Ibrahim, A.

AU - Bouzourene, A.

PY - 2013/12/17

Y1 - 2013/12/17

N2 - This paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test.

AB - This paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test.

KW - Ageing

KW - Device characterisation

KW - MOSFET

KW - Robustness

KW - Silicon Carbide (SiC)

UR - http://www.scopus.com/inward/record.url?scp=84890135152&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84890135152&partnerID=8YFLogxK

U2 - 10.1109/EPE.2013.6634665

DO - 10.1109/EPE.2013.6634665

M3 - Conference contribution

AN - SCOPUS:84890135152

SN - 9781479901166

T3 - 2013 15th European Conference on Power Electronics and Applications, EPE 2013

BT - 2013 15th European Conference on Power Electronics and Applications, EPE 2013

T2 - 2013 15th European Conference on Power Electronics and Applications, EPE 2013

Y2 - 2 September 2013 through 6 September 2013

ER -