Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications

Othman, S. Lefebvre, M. Berkani, Z. Khatir, A. Ibrahim, A. Bouzourene

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test.

Original language	English
Title of host publication	2013 15th European Conference on Power Electronics and Applications, EPE 2013
DOIs	https://doi.org/10.1109/EPE.2013.6634665
Publication status	Published - 17 Dec 2013
Externally published	Yes
Event	2013 15th European Conference on Power Electronics and Applications, EPE 2013 - Lille, France Duration: 2 Sep 2013 → 6 Sep 2013

Publication series

Name	2013 15th European Conference on Power Electronics and Applications, EPE 2013

Conference

Conference	2013 15th European Conference on Power Electronics and Applications, EPE 2013
Country	France
City	Lille
Period	2.9.13 → 6.9.13

Fingerprint

Keywords

Ageing
Device characterisation
MOSFET
Robustness
Silicon Carbide (SiC)

ASJC Scopus subject areas

Energy Engineering and Power Technology
Fuel Technology
Electrical and Electronic Engineering

Cite this

Othman, Lefebvre, S., Berkani, M., Khatir, Z., Ibrahim, A., & Bouzourene, A. (2013). Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications. In 2013 15th European Conference on Power Electronics and Applications, EPE 2013 [6634665] (2013 15th European Conference on Power Electronics and Applications, EPE 2013). https://doi.org/10.1109/EPE.2013.6634665

Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications. / Othman, ; Lefebvre, S.; Berkani, M.; Khatir, Z.; Ibrahim, A.; Bouzourene, A.

2013 15th European Conference on Power Electronics and Applications, EPE 2013. 2013. 6634665 (2013 15th European Conference on Power Electronics and Applications, EPE 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Othman, , Lefebvre, S, Berkani, M, Khatir, Z, Ibrahim, A & Bouzourene, A 2013, Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications. in 2013 15th European Conference on Power Electronics and Applications, EPE 2013., 6634665, 2013 15th European Conference on Power Electronics and Applications, EPE 2013, 2013 15th European Conference on Power Electronics and Applications, EPE 2013, Lille, France, 2.9.13. https://doi.org/10.1109/EPE.2013.6634665

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Access to Document

10.1109/EPE.2013.6634665