Abstract
This paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test.
| Original language | English |
|---|---|
| Title of host publication | 2013 15th European Conference on Power Electronics and Applications, EPE 2013 |
| DOIs | |
| Publication status | Published - 17 Dec 2013 |
| Externally published | Yes |
| Event | 2013 15th European Conference on Power Electronics and Applications, EPE 2013 - Lille, France Duration: 2 Sep 2013 → 6 Sep 2013 |
Publication series
| Name | 2013 15th European Conference on Power Electronics and Applications, EPE 2013 |
|---|
Conference
| Conference | 2013 15th European Conference on Power Electronics and Applications, EPE 2013 |
|---|---|
| Country | France |
| City | Lille |
| Period | 2.9.13 → 6.9.13 |
Fingerprint
Keywords
- Ageing
- Device characterisation
- MOSFET
- Robustness
- Silicon Carbide (SiC)
ASJC Scopus subject areas
- Energy Engineering and Power Technology
- Fuel Technology
- Electrical and Electronic Engineering
Cite this
Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications. / Othman, ; Lefebvre, S.; Berkani, M.; Khatir, Z.; Ibrahim, A.; Bouzourene, A.
2013 15th European Conference on Power Electronics and Applications, EPE 2013. 2013. 6634665 (2013 15th European Conference on Power Electronics and Applications, EPE 2013).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications
AU - Othman,
AU - Lefebvre, S.
AU - Berkani, M.
AU - Khatir, Z.
AU - Ibrahim, A.
AU - Bouzourene, A.
PY - 2013/12/17
Y1 - 2013/12/17
N2 - This paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test.
AB - This paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test.
KW - Ageing
KW - Device characterisation
KW - MOSFET
KW - Robustness
KW - Silicon Carbide (SiC)
UR - http://www.scopus.com/inward/record.url?scp=84890135152&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84890135152&partnerID=8YFLogxK
U2 - 10.1109/EPE.2013.6634665
DO - 10.1109/EPE.2013.6634665
M3 - Conference contribution
AN - SCOPUS:84890135152
SN - 9781479901166
T3 - 2013 15th European Conference on Power Electronics and Applications, EPE 2013
BT - 2013 15th European Conference on Power Electronics and Applications, EPE 2013
ER -