Inverse thermal model of temperature-to-power mapping for GaN systems

Shuangfeng Zhang, Eric Laboure, Denis Labrousse, Stéphane Lefebvre

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper deals with the problem of measurement of the losses in Power GaN chips due to almost impossibility to measure the current under the penalty of adding parasitic inductances incompatible with the switching speeds of these components. For this purpose, this paper investigates the steady-state inverse heat conduction model (IHCM) developed from thermal simulations. The main objective is to derive the power dissipation in a GaN chip mounted on or embedded in a PCB from the surface temperature measured by infrared thermography or thermal sensors. In this problem, the power devices losses are the solutions of the inverse problem of the temperature-to-power mapping. IHCM here is based on simple observations from real PCB structures with GaN chip embedded in PCB substrates. The error of the resultant power map with thermal noises is minimized by Least-Square Optimization, which transforms the direct inverse problem into a constrained optimization problem.

Original languageEnglish
Title of host publicationPCIM Europe Conference Proceedings
EditorsAchim Scharf
PublisherMesago PCIM GmbH
Pages939-943
Number of pages5
Edition225809
ISBN (Print)9783800746460
Publication statusPublished - 1 Jan 2018
Externally publishedYes
EventInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2018 - Nuremberg, Germany
Duration: 5 Jun 20187 Jun 2018

Publication series

NamePCIM Europe Conference Proceedings
Number225809
ISSN (Electronic)2191-3358

Conference

ConferenceInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2018
CountryGermany
CityNuremberg
Period5.6.187.6.18

Fingerprint

Polychlorinated biphenyls
Inverse problems
Heat conduction
Thermal noise
Constrained optimization
Inductance
Temperature
Energy dissipation
Sensors
Substrates
Hot Temperature

Keywords

  • Inverse model
  • Least-square optimization
  • PCB substrates
  • Power losses estimation
  • Temperature-to-power mapping

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Zhang, S., Laboure, E., Labrousse, D., & Lefebvre, S. (2018). Inverse thermal model of temperature-to-power mapping for GaN systems. In A. Scharf (Ed.), PCIM Europe Conference Proceedings (225809 ed., pp. 939-943). (PCIM Europe Conference Proceedings; No. 225809). Mesago PCIM GmbH.

Inverse thermal model of temperature-to-power mapping for GaN systems. / Zhang, Shuangfeng; Laboure, Eric; Labrousse, Denis; Lefebvre, Stéphane.

PCIM Europe Conference Proceedings. ed. / Achim Scharf. 225809. ed. Mesago PCIM GmbH, 2018. p. 939-943 (PCIM Europe Conference Proceedings; No. 225809).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhang, S, Laboure, E, Labrousse, D & Lefebvre, S 2018, Inverse thermal model of temperature-to-power mapping for GaN systems. in A Scharf (ed.), PCIM Europe Conference Proceedings. 225809 edn, PCIM Europe Conference Proceedings, no. 225809, Mesago PCIM GmbH, pp. 939-943, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2018, Nuremberg, Germany, 5.6.18.
Zhang S, Laboure E, Labrousse D, Lefebvre S. Inverse thermal model of temperature-to-power mapping for GaN systems. In Scharf A, editor, PCIM Europe Conference Proceedings. 225809 ed. Mesago PCIM GmbH. 2018. p. 939-943. (PCIM Europe Conference Proceedings; 225809).
Zhang, Shuangfeng ; Laboure, Eric ; Labrousse, Denis ; Lefebvre, Stéphane. / Inverse thermal model of temperature-to-power mapping for GaN systems. PCIM Europe Conference Proceedings. editor / Achim Scharf. 225809. ed. Mesago PCIM GmbH, 2018. pp. 939-943 (PCIM Europe Conference Proceedings; 225809).
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