Intramolecular interactions in aromatic compounds

V. Electronic structure of polyfluoroaromatic silanes and related hydrocarbons

S. A. Krupoder, A. V. Okotrub, N. V. Villem, J. J. Villem, G. G. Furin, N. F. Salakhutdinov, O. Kh Poleshchuk

    Research output: Contribution to journalArticle

    Abstract

    The electronic structure of pentafluorophenyl-substituted silanes ArnSi(CH3)4-n (Ar = C6H5, C6F5, 4-FC6H4, 2,3,5,6-F4C5N; n = 1; Ar = C6H5, C6F5, n = 2, 4) was studied by X-ray emission and He(I) photoelectron spectroscopy. The He(I) photoelectron spectra were measured and interpreted on the basis of MNDO calculations, analysis of the p-fluoro effect, and relative intensities. Substitution of C6F5 for C6H5 in aryltrimethyl- and diaryldimethylsilanes results in enhanced π interaction between the aryl and Si(CH3)n groups (n = 2, 3) by higher π levels and has almost no effect on the charge on the silicon atom.

    Original languageEnglish
    Pages (from-to)101-110
    Number of pages10
    JournalRussian Journal of General Chemistry
    Volume70
    Issue number1
    Publication statusPublished - 2000

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    Silanes
    Aromatic compounds
    Silicon
    Photoelectron spectroscopy
    Hydrocarbons
    Photoelectrons
    Electronic structure
    Substitution reactions
    X rays
    Atoms

    ASJC Scopus subject areas

    • Chemistry(all)

    Cite this

    Krupoder, S. A., Okotrub, A. V., Villem, N. V., Villem, J. J., Furin, G. G., Salakhutdinov, N. F., & Poleshchuk, O. K. (2000). Intramolecular interactions in aromatic compounds: V. Electronic structure of polyfluoroaromatic silanes and related hydrocarbons. Russian Journal of General Chemistry, 70(1), 101-110.

    Intramolecular interactions in aromatic compounds : V. Electronic structure of polyfluoroaromatic silanes and related hydrocarbons. / Krupoder, S. A.; Okotrub, A. V.; Villem, N. V.; Villem, J. J.; Furin, G. G.; Salakhutdinov, N. F.; Poleshchuk, O. Kh.

    In: Russian Journal of General Chemistry, Vol. 70, No. 1, 2000, p. 101-110.

    Research output: Contribution to journalArticle

    Krupoder, SA, Okotrub, AV, Villem, NV, Villem, JJ, Furin, GG, Salakhutdinov, NF & Poleshchuk, OK 2000, 'Intramolecular interactions in aromatic compounds: V. Electronic structure of polyfluoroaromatic silanes and related hydrocarbons', Russian Journal of General Chemistry, vol. 70, no. 1, pp. 101-110.
    Krupoder, S. A. ; Okotrub, A. V. ; Villem, N. V. ; Villem, J. J. ; Furin, G. G. ; Salakhutdinov, N. F. ; Poleshchuk, O. Kh. / Intramolecular interactions in aromatic compounds : V. Electronic structure of polyfluoroaromatic silanes and related hydrocarbons. In: Russian Journal of General Chemistry. 2000 ; Vol. 70, No. 1. pp. 101-110.
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    abstract = "The electronic structure of pentafluorophenyl-substituted silanes ArnSi(CH3)4-n (Ar = C6H5, C6F5, 4-FC6H4, 2,3,5,6-F4C5N; n = 1; Ar = C6H5, C6F5, n = 2, 4) was studied by X-ray emission and He(I) photoelectron spectroscopy. The He(I) photoelectron spectra were measured and interpreted on the basis of MNDO calculations, analysis of the p-fluoro effect, and relative intensities. Substitution of C6F5 for C6H5 in aryltrimethyl- and diaryldimethylsilanes results in enhanced π interaction between the aryl and Si(CH3)n groups (n = 2, 3) by higher π levels and has almost no effect on the charge on the silicon atom.",
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    AU - Krupoder, S. A.

    AU - Okotrub, A. V.

    AU - Villem, N. V.

    AU - Villem, J. J.

    AU - Furin, G. G.

    AU - Salakhutdinov, N. F.

    AU - Poleshchuk, O. Kh

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    AB - The electronic structure of pentafluorophenyl-substituted silanes ArnSi(CH3)4-n (Ar = C6H5, C6F5, 4-FC6H4, 2,3,5,6-F4C5N; n = 1; Ar = C6H5, C6F5, n = 2, 4) was studied by X-ray emission and He(I) photoelectron spectroscopy. The He(I) photoelectron spectra were measured and interpreted on the basis of MNDO calculations, analysis of the p-fluoro effect, and relative intensities. Substitution of C6F5 for C6H5 in aryltrimethyl- and diaryldimethylsilanes results in enhanced π interaction between the aryl and Si(CH3)n groups (n = 2, 3) by higher π levels and has almost no effect on the charge on the silicon atom.

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