The structural-phase transformations in the Au/V/GaAs system which occur during the deposition of coatings and under the action of heat treatment at 100-600°, have been investigated. The following methods have been used for the analysis of the elemental and phase composition of junctions: x-ray structural analysis, reflective electron diffraction, electron microscopy, Auger electron microscopy and secondary ion mass (and energy-mass) spectrometry. It is shown that a thin transition layer is formed during the deposition of vanadium in the boundary with GaAs which contains the intermetallides V-Ga and V-As. The thermally stimulated processes of diffusion and phase formation commence at 400°. After annealing at 500-600°, a large number of compounds are formed (AuGa, AuGa2, AuV3, VAs and V3As were identified) which are inhomogeneously distributed throughout the depth. Lateral structural-phase inhomogeneities are observed in the junction layer. The special features of the interphase interactions in a thin film Au/V/GaAs are determined by the physicochemical properties of the elements constituting the system and, also, by the non-equilibrium conditions under which the reactions occur.
|Number of pages||10|
|Journal||Physics, chemistry and mechanics of surfaces|
|Publication status||Published - 1992|
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