Abstract
Original results of investigations of Ti-Si-N nanostructured coatings deposited by cathodic vacuum arc evaporation are presented in this work. Investigations are provided by the supplementing each other methods: slow positron beam, XRD, SEM with EDS, RBS, AFM, as well as measurement of nanohardness and elastic modulus before and after annealing at 600 °C (for 30 min). It was found that after deposition the solid solution (Ti, Si) N is formed in coatings. In this solid solution the stress-strain state (compressive strain - 2,6%) is occurring. As a result of thermal annealing the deformation slightly decreases to - 2,3%. Measurements provided by method of Positron annihilation spectroscopy (PAS) show that at the interfaces of coatings the segregated defects are occurring as a result of thermal diffusion process. These defects form clusters of vacancy-type defects of a high concentration - from 5·1016 cm-3 to 7,5·1017 cm- 3.
| Original language | English |
|---|---|
| Pages (from-to) | 134-139 |
| Number of pages | 6 |
| Journal | Problems of Atomic Science and Technology |
| Issue number | 2 |
| Publication status | Published - 22 Apr 2013 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Radiation
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Materials Science(all)
Cite this
Influence of thermal annealing on the structure of defects and properties of nanostructures Ti-Si-N coatings obtained by cathode vacuum arc deposition. / Pogrebnjak, A. D.; Krause-Rehberg, R.; Kupchishin, A. I.; Drobyshevskaya, A. A.; Ivaschenko, V. I.; Shypylenko, A. P.; Kolesnikov, D. A.; Erdybaeva, N. K.
In: Problems of Atomic Science and Technology, No. 2, 22.04.2013, p. 134-139.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Influence of thermal annealing on the structure of defects and properties of nanostructures Ti-Si-N coatings obtained by cathode vacuum arc deposition
AU - Pogrebnjak, A. D.
AU - Krause-Rehberg, R.
AU - Kupchishin, A. I.
AU - Drobyshevskaya, A. A.
AU - Ivaschenko, V. I.
AU - Shypylenko, A. P.
AU - Kolesnikov, D. A.
AU - Erdybaeva, N. K.
PY - 2013/4/22
Y1 - 2013/4/22
N2 - Original results of investigations of Ti-Si-N nanostructured coatings deposited by cathodic vacuum arc evaporation are presented in this work. Investigations are provided by the supplementing each other methods: slow positron beam, XRD, SEM with EDS, RBS, AFM, as well as measurement of nanohardness and elastic modulus before and after annealing at 600 °C (for 30 min). It was found that after deposition the solid solution (Ti, Si) N is formed in coatings. In this solid solution the stress-strain state (compressive strain - 2,6%) is occurring. As a result of thermal annealing the deformation slightly decreases to - 2,3%. Measurements provided by method of Positron annihilation spectroscopy (PAS) show that at the interfaces of coatings the segregated defects are occurring as a result of thermal diffusion process. These defects form clusters of vacancy-type defects of a high concentration - from 5·1016 cm-3 to 7,5·1017 cm- 3.
AB - Original results of investigations of Ti-Si-N nanostructured coatings deposited by cathodic vacuum arc evaporation are presented in this work. Investigations are provided by the supplementing each other methods: slow positron beam, XRD, SEM with EDS, RBS, AFM, as well as measurement of nanohardness and elastic modulus before and after annealing at 600 °C (for 30 min). It was found that after deposition the solid solution (Ti, Si) N is formed in coatings. In this solid solution the stress-strain state (compressive strain - 2,6%) is occurring. As a result of thermal annealing the deformation slightly decreases to - 2,3%. Measurements provided by method of Positron annihilation spectroscopy (PAS) show that at the interfaces of coatings the segregated defects are occurring as a result of thermal diffusion process. These defects form clusters of vacancy-type defects of a high concentration - from 5·1016 cm-3 to 7,5·1017 cm- 3.
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M3 - Article
SP - 134
EP - 139
JO - Problems of Atomic Science and Technology
JF - Problems of Atomic Science and Technology
SN - 1682-9344
IS - 2
ER -