TY - GEN
T1 - Influence of the plasma of nanosecond diffuse discharge in air at atmospheric pressure on the electrophysical properties of epitaxial CdHgTe films
AU - Lozovoy, K. A.
AU - Grigoryev, D. V.
AU - Tarasenko, V. F.
AU - Shulepov, Ivan Anisimovich
PY - 2016
Y1 - 2016
N2 - In this paper the influence of the volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of CdHgTe (MCT) epitaxial films of p-type conductivity is investigated. Measurements of electro-physical parameters of MCT samples after irradiation have shown that a layer exhibiting n-type conductivity is formed in the near-surface area of epitaxial films. After more than 600 pulses of influence parameters and thickness of the resulting n-layer is such that the measured field dependence of Hall coefficient corresponds to the material of n-type conductivity. The obtained results show that application of volume nanosecond discharge in air at atmospheric pressure is promising for the modification of the surface properties of epitaxial films of MCT.
AB - In this paper the influence of the volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of CdHgTe (MCT) epitaxial films of p-type conductivity is investigated. Measurements of electro-physical parameters of MCT samples after irradiation have shown that a layer exhibiting n-type conductivity is formed in the near-surface area of epitaxial films. After more than 600 pulses of influence parameters and thickness of the resulting n-layer is such that the measured field dependence of Hall coefficient corresponds to the material of n-type conductivity. The obtained results show that application of volume nanosecond discharge in air at atmospheric pressure is promising for the modification of the surface properties of epitaxial films of MCT.
KW - CdHgTe
KW - Diffuse volume discharge
KW - Electrophysical parameters
UR - http://www.scopus.com/inward/record.url?scp=84958212555&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84958212555&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.685.676
DO - 10.4028/www.scientific.net/KEM.685.676
M3 - Conference contribution
AN - SCOPUS:84958212555
SN - 9783038357087
VL - 685
T3 - Key Engineering Materials
SP - 676
EP - 679
BT - High Technology: Research and Applications, 2015
PB - Trans Tech Publications Ltd
T2 - 4th International Conference for Young Scientists High Technology: Research and Applications, HTRA 2015
Y2 - 21 April 2015 through 24 April 2015
ER -