Abstract
The electrical and photoelectric properties of polycrystalline Si are studied after the high-intensity short-pulse implantation of C ions. It is established that annealing in vacuum (10–2Pa, 300–1200 K) affects the characteristics of the surface dark conductivity and photoconductivity of Si. The optimal conditions for the thermal vacuum treatment of samples in the case when properties most stable to thermal effects and field excitement are reached are determined. The probable reasons for the change in the electrical and photoelectric characteristics of Si are established.
| Original language | English |
|---|---|
| Pages (from-to) | 1168-1173 |
| Number of pages | 6 |
| Journal | Journal of Surface Investigation |
| Volume | 8 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 5 Dec 2014 |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
Cite this
Influence of the high-intensity short-pulse implantation of ions on the properties of polycrystalline silicon. / Kabyshev, A. V.; Konusov, F. V.; Remnev, G. E.; Pavlov, Sergey Khonstantinovich.
In: Journal of Surface Investigation, Vol. 8, No. 6, 05.12.2014, p. 1168-1173.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Influence of the high-intensity short-pulse implantation of ions on the properties of polycrystalline silicon
AU - Kabyshev, A. V.
AU - Konusov, F. V.
AU - Remnev, G. E.
AU - Pavlov, Sergey Khonstantinovich
PY - 2014/12/5
Y1 - 2014/12/5
N2 - The electrical and photoelectric properties of polycrystalline Si are studied after the high-intensity short-pulse implantation of C ions. It is established that annealing in vacuum (10–2Pa, 300–1200 K) affects the characteristics of the surface dark conductivity and photoconductivity of Si. The optimal conditions for the thermal vacuum treatment of samples in the case when properties most stable to thermal effects and field excitement are reached are determined. The probable reasons for the change in the electrical and photoelectric characteristics of Si are established.
AB - The electrical and photoelectric properties of polycrystalline Si are studied after the high-intensity short-pulse implantation of C ions. It is established that annealing in vacuum (10–2Pa, 300–1200 K) affects the characteristics of the surface dark conductivity and photoconductivity of Si. The optimal conditions for the thermal vacuum treatment of samples in the case when properties most stable to thermal effects and field excitement are reached are determined. The probable reasons for the change in the electrical and photoelectric characteristics of Si are established.
UR - http://www.scopus.com/inward/record.url?scp=84914144770&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84914144770&partnerID=8YFLogxK
U2 - 10.1134/S1027451014060068
DO - 10.1134/S1027451014060068
M3 - Article
AN - SCOPUS:84914144770
VL - 8
SP - 1168
EP - 1173
JO - Journal of Surface Investigation
JF - Journal of Surface Investigation
SN - 1027-4510
IS - 6
ER -