Abstract
We present ab initio calculations of an electronic structure and a topological invariant ν0 of the Ge2Sb 2Te5 compound. We have found that in the case of equiatomic composition of Ge/Sb layers the Ge2Sb2Te 5 compound is the topological insulator. The ν0 invariant does not depend on a specific location of Ge and Sb atoms in the mixed layers, and depends only on their concentration. The variation of the concentration in the Ge/Sb layers leads to a change of the topological invariant of the compound.
Original language | English |
---|---|
Pages (from-to) | 169-172 |
Number of pages | 4 |
Journal | Applied Surface Science |
Volume | 267 |
DOIs | |
Publication status | Published - 15 Feb 2013 |
Externally published | Yes |
Keywords
- Atomic composition
- Density functional theory
- Electronic structure
- Topological insulator
- Topological invariant
ASJC Scopus subject areas
- Surfaces, Coatings and Films