Influence of the Ge-Sb sublattice atomic composition on the topological electronic properties of Ge2Sb2Te5

I. V. Silkin, Yu M. Koroteev, G. Bihlmayer, E. V. Chulkov

Research output: Contribution to journal › Article

Abstract

We present ab initio calculations of an electronic structure and a topological invariant ν₀ of the Ge₂Sb ₂Te₅ compound. We have found that in the case of equiatomic composition of Ge/Sb layers the Ge₂Sb₂Te ₅ compound is the topological insulator. The ν₀ invariant does not depend on a specific location of Ge and Sb atoms in the mixed layers, and depends only on their concentration. The variation of the concentration in the Ge/Sb layers leads to a change of the topological invariant of the compound.

Original language	English
Pages (from-to)	169-172
Number of pages	4
Journal	Applied Surface Science
Volume	267
DOIs	https://doi.org/10.1016/j.apsusc.2012.09.017
Publication status	Published - 15 Feb 2013
Externally published	Yes

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Electronic properties

Electronic structure

Atoms

Chemical analysis

Keywords

Atomic composition
Density functional theory
Electronic structure
Topological insulator
Topological invariant

ASJC Scopus subject areas

Surfaces, Coatings and Films

Cite this

Silkin, I. V., Koroteev, Y. M., Bihlmayer, G., & Chulkov, E. V. (2013). Influence of the Ge-Sb sublattice atomic composition on the topological electronic properties of Ge2Sb2Te5. Applied Surface Science, 267, 169-172. https://doi.org/10.1016/j.apsusc.2012.09.017

Influence of the Ge-Sb sublattice atomic composition on the topological electronic properties of Ge2Sb2Te5. / Silkin, I. V.; Koroteev, Yu M.; Bihlmayer, G.; Chulkov, E. V.

In: Applied Surface Science, Vol. 267, 15.02.2013, p. 169-172.

Research output: Contribution to journal › Article

Silkin, IV, Koroteev, YM, Bihlmayer, G & Chulkov, EV 2013, 'Influence of the Ge-Sb sublattice atomic composition on the topological electronic properties of Ge2Sb2Te5', Applied Surface Science, vol. 267, pp. 169-172. https://doi.org/10.1016/j.apsusc.2012.09.017

Silkin IV, Koroteev YM, Bihlmayer G, Chulkov EV. Influence of the Ge-Sb sublattice atomic composition on the topological electronic properties of Ge2Sb2Te5. Applied Surface Science. 2013 Feb 15;267:169-172. https://doi.org/10.1016/j.apsusc.2012.09.017

Silkin, I. V. ; Koroteev, Yu M. ; Bihlmayer, G. ; Chulkov, E. V. / Influence of the Ge-Sb sublattice atomic composition on the topological electronic properties of Ge2Sb2Te5. In: Applied Surface Science. 2013 ; Vol. 267. pp. 169-172.

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Access to Document

10.1016/j.apsusc.2012.09.017