Influence of the Ge-Sb sublattice atomic composition on the topological electronic properties of Ge2Sb2Te5

Abstract

We present ab initio calculations of an electronic structure and a topological invariant ν₀ of the Ge₂Sb ₂Te₅ compound. We have found that in the case of equiatomic composition of Ge/Sb layers the Ge₂Sb₂Te ₅ compound is the topological insulator. The ν₀ invariant does not depend on a specific location of Ge and Sb atoms in the mixed layers, and depends only on their concentration. The variation of the concentration in the Ge/Sb layers leads to a change of the topological invariant of the compound.

Original language	English
Pages (from-to)	169-172
Number of pages	4
Journal	Applied Surface Science
Volume	267
DOIs	https://doi.org/10.1016/j.apsusc.2012.09.017
Publication status	Published - 15 Feb 2013
Externally published	Yes

Keywords

Atomic composition
Density functional theory
Electronic structure
Topological insulator
Topological invariant

ASJC Scopus subject areas

Surfaces, Coatings and Films

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10.1016/j.apsusc.2012.09.017

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title = "Influence of the Ge-Sb sublattice atomic composition on the topological electronic properties of Ge2Sb2Te5",

abstract = "We present ab initio calculations of an electronic structure and a topological invariant ν0 of the Ge2Sb 2Te5 compound. We have found that in the case of equiatomic composition of Ge/Sb layers the Ge2Sb2Te 5 compound is the topological insulator. The ν0 invariant does not depend on a specific location of Ge and Sb atoms in the mixed layers, and depends only on their concentration. The variation of the concentration in the Ge/Sb layers leads to a change of the topological invariant of the compound.",

keywords = "Atomic composition, Density functional theory, Electronic structure, Topological insulator, Topological invariant",

author = "Silkin, {I. V.} and Koroteev, {Yu M.} and G. Bihlmayer and Chulkov, {E. V.}",

year = "2013",

month = feb,

day = "15",

doi = "10.1016/j.apsusc.2012.09.017",

language = "English",

volume = "267",

pages = "169--172",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

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TY - JOUR

T1 - Influence of the Ge-Sb sublattice atomic composition on the topological electronic properties of Ge2Sb2Te5

AU - Silkin, I. V.

AU - Koroteev, Yu M.

AU - Bihlmayer, G.

AU - Chulkov, E. V.

PY - 2013/2/15

Y1 - 2013/2/15

N2 - We present ab initio calculations of an electronic structure and a topological invariant ν0 of the Ge2Sb 2Te5 compound. We have found that in the case of equiatomic composition of Ge/Sb layers the Ge2Sb2Te 5 compound is the topological insulator. The ν0 invariant does not depend on a specific location of Ge and Sb atoms in the mixed layers, and depends only on their concentration. The variation of the concentration in the Ge/Sb layers leads to a change of the topological invariant of the compound.

AB - We present ab initio calculations of an electronic structure and a topological invariant ν0 of the Ge2Sb 2Te5 compound. We have found that in the case of equiatomic composition of Ge/Sb layers the Ge2Sb2Te 5 compound is the topological insulator. The ν0 invariant does not depend on a specific location of Ge and Sb atoms in the mixed layers, and depends only on their concentration. The variation of the concentration in the Ge/Sb layers leads to a change of the topological invariant of the compound.

KW - Atomic composition

KW - Density functional theory

KW - Electronic structure

KW - Topological insulator

KW - Topological invariant

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U2 - 10.1016/j.apsusc.2012.09.017

DO - 10.1016/j.apsusc.2012.09.017

M3 - Article

AN - SCOPUS:84873703224

VL - 267

SP - 169

EP - 172

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332