Influence of the Ge-Sb sublattice atomic composition on the topological electronic properties of Ge2Sb2Te5

I. V. Silkin, Yu M. Koroteev, G. Bihlmayer, E. V. Chulkov

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We present ab initio calculations of an electronic structure and a topological invariant ν0 of the Ge2Sb 2Te5 compound. We have found that in the case of equiatomic composition of Ge/Sb layers the Ge2Sb2Te 5 compound is the topological insulator. The ν0 invariant does not depend on a specific location of Ge and Sb atoms in the mixed layers, and depends only on their concentration. The variation of the concentration in the Ge/Sb layers leads to a change of the topological invariant of the compound.

Original languageEnglish
Pages (from-to)169-172
Number of pages4
JournalApplied Surface Science
Volume267
DOIs
Publication statusPublished - 15 Feb 2013
Externally publishedYes

Keywords

  • Atomic composition
  • Density functional theory
  • Electronic structure
  • Topological insulator
  • Topological invariant

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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