Influence of the Ge-Sb sublattice atomic composition on the topological electronic properties of Ge2Sb2Te5

I. V. Silkin, Yu M. Koroteev, G. Bihlmayer, E. V. Chulkov

Research output: Contribution to journal › Article

Abstract

We present ab initio calculations of an electronic structure and a topological invariant ν₀ of the Ge₂Sb ₂Te₅ compound. We have found that in the case of equiatomic composition of Ge/Sb layers the Ge₂Sb₂Te ₅ compound is the topological insulator. The ν₀ invariant does not depend on a specific location of Ge and Sb atoms in the mixed layers, and depends only on their concentration. The variation of the concentration in the Ge/Sb layers leads to a change of the topological invariant of the compound.

Original language	English
Pages (from-to)	169-172
Number of pages	4
Journal	Applied Surface Science
Volume	267
DOIs	https://doi.org/10.1016/j.apsusc.2012.09.017
Publication status	Published - 15 Feb 2013
Externally published	Yes

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Keywords

Atomic composition
Density functional theory
Electronic structure
Topological insulator
Topological invariant

ASJC Scopus subject areas

Surfaces, Coatings and Films

Cite this

Silkin, I. V., Koroteev, Y. M., Bihlmayer, G., & Chulkov, E. V. (2013). Influence of the Ge-Sb sublattice atomic composition on the topological electronic properties of Ge2Sb2Te5. Applied Surface Science, 267, 169-172. https://doi.org/10.1016/j.apsusc.2012.09.017

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AU - Bihlmayer, G.

AU - Chulkov, E. V.

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AB - We present ab initio calculations of an electronic structure and a topological invariant ν0 of the Ge2Sb 2Te5 compound. We have found that in the case of equiatomic composition of Ge/Sb layers the Ge2Sb2Te 5 compound is the topological insulator. The ν0 invariant does not depend on a specific location of Ge and Sb atoms in the mixed layers, and depends only on their concentration. The variation of the concentration in the Ge/Sb layers leads to a change of the topological invariant of the compound.

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Access to Document

10.1016/j.apsusc.2012.09.017