Abstract
We present ab initio calculations of an electronic structure and a topological invariant ν0 of the Ge2Sb 2Te5 compound. We have found that in the case of equiatomic composition of Ge/Sb layers the Ge2Sb2Te 5 compound is the topological insulator. The ν0 invariant does not depend on a specific location of Ge and Sb atoms in the mixed layers, and depends only on their concentration. The variation of the concentration in the Ge/Sb layers leads to a change of the topological invariant of the compound.
| Original language | English |
|---|---|
| Pages (from-to) | 169-172 |
| Number of pages | 4 |
| Journal | Applied Surface Science |
| Volume | 267 |
| DOIs | |
| Publication status | Published - 15 Feb 2013 |
| Externally published | Yes |
Keywords
- Atomic composition
- Density functional theory
- Electronic structure
- Topological insulator
- Topological invariant
ASJC Scopus subject areas
- Surfaces, Coatings and Films
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Cite this
Silkin, I. V., Koroteev, Y. M., Bihlmayer, G., & Chulkov, E. V. (2013). Influence of the Ge-Sb sublattice atomic composition on the topological electronic properties of Ge2Sb2Te5. Applied Surface Science, 267, 169-172. https://doi.org/10.1016/j.apsusc.2012.09.017