Abstract
To remove the electrons, emitted by an MIM cathode (or a formed metal-insulator-metal system), a collector (or anode) is placed beneath the latter. The anode field E//a equals U//a/d//a (U//a is the anode voltage and d//a is the distance between the anode surface and the surface of the MIM cathode) usually does not exceed 10**3 V/cm, whereas the field in the formed channel, resulting from the forming process, from which electron emission occurs, is of the order of E//c approximately equals 10**6 V/cm according to crude estimates. It is of interest to trace the influence of E//a, where it approaches E//c, on the processes occurring in the formed MIM system.
| Original language | English |
|---|---|
| Pages (from-to) | 179-181 |
| Number of pages | 3 |
| Journal | Soviet journal of communications technology & electronics |
| Volume | 32 |
| Issue number | 7 |
| Publication status | Published - Jul 1987 |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
Cite this
INFLUENCE OF THE COLLECTOR ELECTRIC FIELD ON PROCESSES OCCURRING IN A FORMED METAL-INSULATOR-METAL SYSTEM. / Vorob'yev, G. A.; Gyngazov, S. A.; Lubsanov, R. B.
In: Soviet journal of communications technology & electronics, Vol. 32, No. 7, 07.1987, p. 179-181.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - INFLUENCE OF THE COLLECTOR ELECTRIC FIELD ON PROCESSES OCCURRING IN A FORMED METAL-INSULATOR-METAL SYSTEM.
AU - Vorob'yev, G. A.
AU - Gyngazov, S. A.
AU - Lubsanov, R. B.
PY - 1987/7
Y1 - 1987/7
N2 - To remove the electrons, emitted by an MIM cathode (or a formed metal-insulator-metal system), a collector (or anode) is placed beneath the latter. The anode field E//a equals U//a/d//a (U//a is the anode voltage and d//a is the distance between the anode surface and the surface of the MIM cathode) usually does not exceed 10**3 V/cm, whereas the field in the formed channel, resulting from the forming process, from which electron emission occurs, is of the order of E//c approximately equals 10**6 V/cm according to crude estimates. It is of interest to trace the influence of E//a, where it approaches E//c, on the processes occurring in the formed MIM system.
AB - To remove the electrons, emitted by an MIM cathode (or a formed metal-insulator-metal system), a collector (or anode) is placed beneath the latter. The anode field E//a equals U//a/d//a (U//a is the anode voltage and d//a is the distance between the anode surface and the surface of the MIM cathode) usually does not exceed 10**3 V/cm, whereas the field in the formed channel, resulting from the forming process, from which electron emission occurs, is of the order of E//c approximately equals 10**6 V/cm according to crude estimates. It is of interest to trace the influence of E//a, where it approaches E//c, on the processes occurring in the formed MIM system.
UR - http://www.scopus.com/inward/record.url?scp=0023380559&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0023380559&partnerID=8YFLogxK
M3 - Article
VL - 32
SP - 179
EP - 181
JO - Soviet journal of communications technology & electronics
JF - Soviet journal of communications technology & electronics
SN - 8756-6648
IS - 7
ER -