TY - JOUR
T1 - INFLUENCE OF THE COLLECTOR ELECTRIC FIELD ON PROCESSES OCCURRING IN A FORMED METAL-INSULATOR-METAL SYSTEM.
AU - Vorob'yev, G. A.
AU - Gyngazov, S. A.
AU - Lubsanov, R. B.
PY - 1987/7
Y1 - 1987/7
N2 - To remove the electrons, emitted by an MIM cathode (or a formed metal-insulator-metal system), a collector (or anode) is placed beneath the latter. The anode field E//a equals U//a/d//a (U//a is the anode voltage and d//a is the distance between the anode surface and the surface of the MIM cathode) usually does not exceed 10**3 V/cm, whereas the field in the formed channel, resulting from the forming process, from which electron emission occurs, is of the order of E//c approximately equals 10**6 V/cm according to crude estimates. It is of interest to trace the influence of E//a, where it approaches E//c, on the processes occurring in the formed MIM system.
AB - To remove the electrons, emitted by an MIM cathode (or a formed metal-insulator-metal system), a collector (or anode) is placed beneath the latter. The anode field E//a equals U//a/d//a (U//a is the anode voltage and d//a is the distance between the anode surface and the surface of the MIM cathode) usually does not exceed 10**3 V/cm, whereas the field in the formed channel, resulting from the forming process, from which electron emission occurs, is of the order of E//c approximately equals 10**6 V/cm according to crude estimates. It is of interest to trace the influence of E//a, where it approaches E//c, on the processes occurring in the formed MIM system.
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M3 - Article
AN - SCOPUS:0023380559
VL - 32
SP - 179
EP - 181
JO - Soviet journal of communications technology & electronics
JF - Soviet journal of communications technology & electronics
SN - 8756-6648
IS - 7
ER -