Abstract
To remove the electrons, emitted by an MIM cathode (or a formed metal-insulator-metal system), a collector (or anode) is placed beneath the latter. The anode field E//a equals U//a/d//a (U//a is the anode voltage and d//a is the distance between the anode surface and the surface of the MIM cathode) usually does not exceed 10**3 V/cm, whereas the field in the formed channel, resulting from the forming process, from which electron emission occurs, is of the order of E//c approximately equals 10**6 V/cm according to crude estimates. It is of interest to trace the influence of E//a, where it approaches E//c, on the processes occurring in the formed MIM system.
| Original language | English |
|---|---|
| Pages (from-to) | 179-181 |
| Number of pages | 3 |
| Journal | Soviet journal of communications technology & electronics |
| Volume | 32 |
| Issue number | 7 |
| Publication status | Published - Jul 1987 |
ASJC Scopus subject areas
- Engineering(all)
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Vorob'yev, G. A., Gyngazov, S. A., & Lubsanov, R. B. (1987). INFLUENCE OF THE COLLECTOR ELECTRIC FIELD ON PROCESSES OCCURRING IN A FORMED METAL-INSULATOR-METAL SYSTEM. Soviet journal of communications technology & electronics, 32(7), 179-181.