Influence of repetitions of short-circuit conditions on IGBT lifetime

F. Saint-Eve, S. Lefebvre, Z. Khatir

Research output: Contribution to journalReview article

4 Citations (Scopus)

Abstract

The paper deals with the behaviour of PT and NPT IGBTs under repetitive short-circuit operations. The repetition of these severe working conditions is responsible for one mode of devices ageing and results unavoidably in the components failures. A long term campaign of experimental tests was made in order to determine the number of short-circuit operations these devices can support before failure for different dissipated energies during the short-circuit tests. The results show the very good ability of these devices to work in short-circuit operations when the dissipated energy is lower than a particular critical energy. Depending on the dissipated energy level, different failures modes can appear, in both PT and NPT transistors. In addition, a 1-D numerical simulation was realised in order to estimate the internal temperature in the silicon chip when the failure occurs.

Original languageEnglish
Pages (from-to)7-12
Number of pages6
JournalEPE Journal (European Power Electronics and Drives Journal)
Volume15
Issue number4
DOIs
Publication statusPublished - 1 Jan 2005
Externally publishedYes

Fingerprint

Insulated gate bipolar transistors (IGBT)
Short circuit currents
Electron energy levels
Failure modes
Transistors
Aging of materials
Silicon
Computer simulation
Temperature

Keywords

  • IGBT
  • Power semiconductor devices
  • Reliability
  • Short-circuit

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Influence of repetitions of short-circuit conditions on IGBT lifetime. / Saint-Eve, F.; Lefebvre, S.; Khatir, Z.

In: EPE Journal (European Power Electronics and Drives Journal), Vol. 15, No. 4, 01.01.2005, p. 7-12.

Research output: Contribution to journalReview article

@article{2c6b4fed99884728bc0757045bd01910,
title = "Influence of repetitions of short-circuit conditions on IGBT lifetime",
abstract = "The paper deals with the behaviour of PT and NPT IGBTs under repetitive short-circuit operations. The repetition of these severe working conditions is responsible for one mode of devices ageing and results unavoidably in the components failures. A long term campaign of experimental tests was made in order to determine the number of short-circuit operations these devices can support before failure for different dissipated energies during the short-circuit tests. The results show the very good ability of these devices to work in short-circuit operations when the dissipated energy is lower than a particular critical energy. Depending on the dissipated energy level, different failures modes can appear, in both PT and NPT transistors. In addition, a 1-D numerical simulation was realised in order to estimate the internal temperature in the silicon chip when the failure occurs.",
keywords = "IGBT, Power semiconductor devices, Reliability, Short-circuit",
author = "F. Saint-Eve and S. Lefebvre and Z. Khatir",
year = "2005",
month = "1",
day = "1",
doi = "10.1080/09398368.2005.11463598",
language = "English",
volume = "15",
pages = "7--12",
journal = "EPE Journal (European Power Electronics and Drives Journal)",
issn = "0939-8368",
publisher = "EPE Association",
number = "4",

}

TY - JOUR

T1 - Influence of repetitions of short-circuit conditions on IGBT lifetime

AU - Saint-Eve, F.

AU - Lefebvre, S.

AU - Khatir, Z.

PY - 2005/1/1

Y1 - 2005/1/1

N2 - The paper deals with the behaviour of PT and NPT IGBTs under repetitive short-circuit operations. The repetition of these severe working conditions is responsible for one mode of devices ageing and results unavoidably in the components failures. A long term campaign of experimental tests was made in order to determine the number of short-circuit operations these devices can support before failure for different dissipated energies during the short-circuit tests. The results show the very good ability of these devices to work in short-circuit operations when the dissipated energy is lower than a particular critical energy. Depending on the dissipated energy level, different failures modes can appear, in both PT and NPT transistors. In addition, a 1-D numerical simulation was realised in order to estimate the internal temperature in the silicon chip when the failure occurs.

AB - The paper deals with the behaviour of PT and NPT IGBTs under repetitive short-circuit operations. The repetition of these severe working conditions is responsible for one mode of devices ageing and results unavoidably in the components failures. A long term campaign of experimental tests was made in order to determine the number of short-circuit operations these devices can support before failure for different dissipated energies during the short-circuit tests. The results show the very good ability of these devices to work in short-circuit operations when the dissipated energy is lower than a particular critical energy. Depending on the dissipated energy level, different failures modes can appear, in both PT and NPT transistors. In addition, a 1-D numerical simulation was realised in order to estimate the internal temperature in the silicon chip when the failure occurs.

KW - IGBT

KW - Power semiconductor devices

KW - Reliability

KW - Short-circuit

UR - http://www.scopus.com/inward/record.url?scp=29344453814&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=29344453814&partnerID=8YFLogxK

U2 - 10.1080/09398368.2005.11463598

DO - 10.1080/09398368.2005.11463598

M3 - Review article

VL - 15

SP - 7

EP - 12

JO - EPE Journal (European Power Electronics and Drives Journal)

JF - EPE Journal (European Power Electronics and Drives Journal)

SN - 0939-8368

IS - 4

ER -