Influence of positron annealing on static and microwave characteristics of low-frequence AlGaN/GaN HEMT

N. A. Torkhov, A. V. Gradoboev, M. M. Mihalitskiy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Obtained results show, that used modes of positron annealing of low-frequency (1-3 GHz) HEMT lead to rising of power and current gains (G max and H21 respectively). The value of cutoff frequency Ft does not decrease, and the Fmax raised. According to S-parameters of low-frequency (1-3 GHz) HEMT at high-frequency (20-40 GHz) range, one can see parameters degradation of the used construction. To improve microwave HEMT in 20-40 GHz range, obviously, it is necessary to use high-frequency construction of heteroepitaxial structure and other modes of positron annealing.

Original languageEnglish
Title of host publicationCriMiCo 2012 - 2012 22nd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
Pages647-648
Number of pages2
Publication statusPublished - 2012
Event2012 22nd International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2012 - Sevastopol, Crimea, Ukraine
Duration: 10 Sep 201214 Sep 2012

Other

Other2012 22nd International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2012
CountryUkraine
CitySevastopol, Crimea
Period10.9.1214.9.12

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ASJC Scopus subject areas

  • Computer Networks and Communications

Cite this

Torkhov, N. A., Gradoboev, A. V., & Mihalitskiy, M. M. (2012). Influence of positron annealing on static and microwave characteristics of low-frequence AlGaN/GaN HEMT. In CriMiCo 2012 - 2012 22nd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings (pp. 647-648). [6336132]