Influence of positron annealing on static and microwave characteristics of low-frequence AlGaN/GaN HEMT

N. A. Torkhov, A. V. Gradoboev, M. M. Mihalitskiy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Obtained results show, that used modes of positron annealing of low-frequency (1-3 GHz) HEMT lead to rising of power and current gains (G max and H21 respectively). The value of cutoff frequency Ft does not decrease, and the Fmax raised. According to S-parameters of low-frequency (1-3 GHz) HEMT at high-frequency (20-40 GHz) range, one can see parameters degradation of the used construction. To improve microwave HEMT in 20-40 GHz range, obviously, it is necessary to use high-frequency construction of heteroepitaxial structure and other modes of positron annealing.

Original languageEnglish
Title of host publicationCriMiCo 2012 - 2012 22nd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
Pages647-648
Number of pages2
Publication statusPublished - 2012
Event2012 22nd International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2012 - Sevastopol, Crimea, Ukraine
Duration: 10 Sep 201214 Sep 2012

Other

Other2012 22nd International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2012
CountryUkraine
CitySevastopol, Crimea
Period10.9.1214.9.12

Fingerprint

Positrons
High electron mobility transistors
Microwaves
Annealing
Scattering parameters
Cutoff frequency
Degradation

ASJC Scopus subject areas

  • Computer Networks and Communications

Cite this

Torkhov, N. A., Gradoboev, A. V., & Mihalitskiy, M. M. (2012). Influence of positron annealing on static and microwave characteristics of low-frequence AlGaN/GaN HEMT. In CriMiCo 2012 - 2012 22nd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings (pp. 647-648). [6336132]

Influence of positron annealing on static and microwave characteristics of low-frequence AlGaN/GaN HEMT. / Torkhov, N. A.; Gradoboev, A. V.; Mihalitskiy, M. M.

CriMiCo 2012 - 2012 22nd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings. 2012. p. 647-648 6336132.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Torkhov, NA, Gradoboev, AV & Mihalitskiy, MM 2012, Influence of positron annealing on static and microwave characteristics of low-frequence AlGaN/GaN HEMT. in CriMiCo 2012 - 2012 22nd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings., 6336132, pp. 647-648, 2012 22nd International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2012, Sevastopol, Crimea, Ukraine, 10.9.12.
Torkhov NA, Gradoboev AV, Mihalitskiy MM. Influence of positron annealing on static and microwave characteristics of low-frequence AlGaN/GaN HEMT. In CriMiCo 2012 - 2012 22nd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings. 2012. p. 647-648. 6336132
Torkhov, N. A. ; Gradoboev, A. V. ; Mihalitskiy, M. M. / Influence of positron annealing on static and microwave characteristics of low-frequence AlGaN/GaN HEMT. CriMiCo 2012 - 2012 22nd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings. 2012. pp. 647-648
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