Influence of plasmodynamic synthesis energy in Si-C system on the product phase composition and dispersion

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Abstract

The results of experimental studies on ultradispersed silicon carbide synthesis and production upon a hypervelocity silicon-carbon plasma jet influencing a copper barrier are presented. A significant increase of β-SiC content to 88% and average crystallite size from ∼70 to ∼140 nm was found by XRD, SEM, and TEM for energy growth from ∼10.0 to ∼30.0 kJ.

Original languageEnglish
Pages (from-to)34-41
Number of pages8
JournalNanotechnologies in Russia
Volume10
Issue number1-2
DOIs
Publication statusPublished - 2015

Fingerprint

hypervelocity
Plasma jets
Silicon
Crystallite size
Phase composition
Silicon carbide
silicon carbides
plasma jets
Copper
Carbon
Transmission electron microscopy
copper
transmission electron microscopy
Scanning electron microscopy
scanning electron microscopy
carbon
silicon
synthesis
products
energy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)
  • Engineering(all)

Cite this

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title = "Influence of plasmodynamic synthesis energy in Si-C system on the product phase composition and dispersion",
abstract = "The results of experimental studies on ultradispersed silicon carbide synthesis and production upon a hypervelocity silicon-carbon plasma jet influencing a copper barrier are presented. A significant increase of β-SiC content to 88{\%} and average crystallite size from ∼70 to ∼140 nm was found by XRD, SEM, and TEM for energy growth from ∼10.0 to ∼30.0 kJ.",
author = "Sivkov, {A. A.} and Nikitin, {Dmitry Sergeevich} and Pak, {A. Ya} and Rakhmatullin, {I. A.}",
year = "2015",
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AU - Nikitin, Dmitry Sergeevich

AU - Pak, A. Ya

AU - Rakhmatullin, I. A.

PY - 2015

Y1 - 2015

N2 - The results of experimental studies on ultradispersed silicon carbide synthesis and production upon a hypervelocity silicon-carbon plasma jet influencing a copper barrier are presented. A significant increase of β-SiC content to 88% and average crystallite size from ∼70 to ∼140 nm was found by XRD, SEM, and TEM for energy growth from ∼10.0 to ∼30.0 kJ.

AB - The results of experimental studies on ultradispersed silicon carbide synthesis and production upon a hypervelocity silicon-carbon plasma jet influencing a copper barrier are presented. A significant increase of β-SiC content to 88% and average crystallite size from ∼70 to ∼140 nm was found by XRD, SEM, and TEM for energy growth from ∼10.0 to ∼30.0 kJ.

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